Semiconductor devices with dissimlar materials and methods
A semiconductor device includes a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE). Recesses extend into the work piece from the first side and includes a pattern. A second material having a second CTE is within the recesses and is over the first material between the recesses; and A third material having a third CTE is over one of the second side or the second material. The third CTE and the second CTE are different than the first CTE.
1. A semiconductor device, comprising:
a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE);
recesses extending into the work piece from the first side and comprising a pattern;
a second material comprising a second CTE within the recesses and over the first material between the recesses; and
a third material comprising a third CTE over one of the second side or the second material;
wherein:
the third CTE and the second CTE are different than the first CTE.
2. The semiconductor device of claim 1 , wherein:
the pattern comprises a honeycomb pattern.
3. The semiconductor device of claim 1 , wherein:
the third material comprises an insulating packaging material.
4. The semiconductor device of claim 1 , wherein:
the second material comprises an insulating material.
5. The semiconductor device of claim 1 , wherein:
the first material comprises semiconductor material.
6. The semiconductor device of claim 1 , wherein:
the third material is over the second material.
7. The semiconductor device of claim 1 , wherein:
the third material is over the second side of the work piece.
8. The semiconductor device of claim 1 , wherein:
the third CTE and the second CTE are greater than the first CTE.
9. The semiconductor device of claim 1 , wherein:
the second CTE is greater than the first CTE and less than the third CTE.
10. A semiconductor device, comprising:
a work piece comprising a first material, a first side, and a second side opposite to the first side, the first material comprising a first coefficient of thermal expansion (first CTE);
a filled recessed structure comprising:
recesses extending into the first material and comprising a pattern in a plan view, and
a second material different than the first material in the recesses and comprising a second CTE; and
a third material over one of the second material or the second side and comprising a third CTE, wherein:
the third CTE and the second CTE are different than the first CTE; and
the pattern comprises a honeycomb pattern.
11. The semiconductor device of claim 10 , wherein:
the third CTE and the second CTE are greater than the first CTE.
12. The semiconductor device of claim 10 , wherein:
the second CTE is greater than the first CTE and less than the third CTE.
13. The semiconductor device of claim 10 , wherein:
the recesses extend partially into the first material; and
the second material extends out of the recesses and overlaps the first material interposed between the recesses.
14. The semiconductor device of claim 10 , wherein:
the third material is over the second material.
15. The semiconductor device of claim 10 , wherein:
the work piece comprises a peripheral edge region;
the recesses are locating in the peripheral edge region; and
the third material is over the second side of the work piece.
16. The semiconductor device of claim 10 , wherein:
the second material comprises an insulating material.
17. A semiconductor device, comprising:
a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE);
recesses extending into the work piece from the first side and comprising a pattern;
a second material within the recesses and over portions of the first material outside of the recesses and interposed between the recesses, wherein the second material comprises a second CTE; and
a third material over one of the second side or the second material, wherein the third material comprises a third CTE;
wherein:
the third CTE and the second CTE are different than the first CTE.
18. The semiconductor device of claim 17 , wherein:
the first material comprises silicon carbide (SiC).
19. The semiconductor device of claim 17 , wherein:
the second material comprises an insulating material; and
the third material is over the second side of the work piece.
20. The semiconductor device of claim 17 , wherein:
the third material is over the second material;
the second material comprises a dielectric; and
the third material comprising an insulating packaging material.
21. A semiconductor device, comprising:
a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE);
a first recess extending through the work piece from the first side to the second side;
a second material comprising a second CTE within the first recess and over the first material outside of the first recess; and
a third material comprising a third CTE over the second material;
wherein:
the third CTE and the second CTE are different than the first CTE.
22. The semiconductor device of claim 21 , wherein:
the first recess is part of a plurality of recesses comprising a pattern; and
the pattern comprises a honeycomb pattern.
23. The semiconductor device of claim 21 , wherein:
the third material comprises an insulating packaging material.
24. The semiconductor device of claim 21 , wherein:
the second material comprises an insulating material.
25. The semiconductor device of claim 21 , wherein:
the first material comprises semiconductor material.
26. The semiconductor device of claim 25 , wherein:
the first material comprises a first semiconductor material;
the second material comprises a conductor; and
the third material comprises a second semiconductor material.