IP Library › Granted Patent US 12,645,104
Granted Patent B2
US 12,645,104 · App. 18/062,733 · Granted Jun 2, 2026

Photonic crystal element

Inventors: Jungo Kondo (Miyoshi-City, JP); Makoto Iwai (Kasugai-City, JP); Keiichiro Asai (Nagoya-City, JP); Tomoyoshi Tai (Inazawa-City, JP); Kentaro Tani (Nagoya-City, JP)
Assignee: NGK INSULATORS, LTD.
G02F1/025G02B6/1225G02F1/2257H01P1/20H01Q15/14G02F2202/32
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Quick Facts
Patent No.
US 12,645,104
App. No.
18/062,733
Granted
Jun 2, 2026
Kind
B2
Abstract

Provided is a photonic crystal element, which shows small delay of an electric signal, shows a small propagation loss, and has uniform characteristics over its entirety. The photonic crystal element includes a two-dimensional photonic crystal slab having holes periodically formed in a substrate made of a ceramics material, the photonic crystal element being configured to guide an electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less.

Claims (47)

1 . A photonic crystal element, comprising a two-dimensional photonic crystal slab having holes periodically formed in a substrate made of a ceramics material, the photonic crystal element being configured to guide an electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less,

wherein the ceramics material is polycrystalline or amorphous, and

wherein the substrate has pores each having a pore size of 1 μm or more at a ratio of from 0.5 ppm to 3.000 ppm.

2 . The photonic crystal element according to claim 1 , further comprising:

a support substrate arranged below the substrate, the support substrate being configured to support the substrate;

a joining portion configured to integrate the substrate and the support substrate with each other; and

a cavity defined by a lower surface of the substrate, an upper surface of the support substrate, and the joining portion.

3 . The photonic crystal element according to claim 1 , wherein a period of the holes is from 10 μm to 1 mm.

4 . The photonic crystal element according to claim 1 , wherein the substrate has a dielectric constant of from 3.6 to 11.5 at from 100 GHz to 10 THz.

5 . The photonic crystal element according to claim 1 , wherein the substrate has a dielectric loss of 0.01 or less.

6 . The photonic crystal element according to claim 1 , wherein the substrate has a resistivity of 100 kΩ·cm or more.

7 . The photonic crystal element according to claim 1 , wherein the ceramics material is one selected from the group consisting of: quartz; aluminum nitride; aluminum oxide; silicon carbide; magnesium oxide; and spinel.

8 . The photonic crystal element according to claim 1 , further comprising a waveguide defined in a portion in the substrate where the holes are free from being formed, the waveguide being configured to guide the electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less.

9 . The photonic crystal element according to claim 1 , wherein the photonic crystal element is usable as an antenna, a band-pass filter, a coupler, a delay line, or an isolator.

10 . A photonic crystal element comprising:

a two-dimensional photonic crystal slab having holes periodically formed in a substrate made of a ceramics material,

a support substrate arranged below the substrate, the support substrate being configured to support the substrate; and

an active element capable of at least one of transmission, reception, or amplification of the electromagnetic wave, the active element being supported by the support substrate,

the photonic crystal element being configured to guide an electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less,

wherein the substrate has pores each having a pore size of 1 μm or more at a ratio of from 0.5 ppm to 3,000 ppm.

11 . The photonic crystal element according to claim 10 , further comprising:

a line-defect first waveguide defined in a portion in the substrate where the holes are free from being formed; and

a second waveguide positioned between the active element and the first waveguide in a propagation path of the electromagnetic wave, the second waveguide being capable of guiding the electromagnetic wave.

12 . The photonic crystal element according to claim 10 , further comprising:

a line-defect waveguide defined in a portion in the substrate where the holes are free from being formed; and

a resonator defined in the portion in the substrate where the holes are free from being formed, the resonator being positioned between the active element and the waveguide in a propagation path of the electromagnetic wave, and being capable of guiding the electromagnetic wave.

13 . The photonic crystal element according to claim 10 , wherein the substrate and the support substrate are directly joined to each other.

14 . The photonic crystal element according to claim 13 ,

wherein the support substrate has a depressed portion, and

wherein the photonic crystal element comprises a cavity defined by a lower surface of the substrate and the depressed portion of the support substrate.

15 . The photonic crystal element according to claim 13 , further comprising:

an insulating layer positioned between the substrate and the support substrate; and

a cavity defined by a lower surface of the substrate, an upper surface of the support substrate, and the insulating layer.

16 . A photonic crystal element, comprising:

a two-dimensional photonic crystal slab having holes periodically formed in a substrate made of a ceramics material;

a support substrate arranged below the substrate, the support substrate being configured to support the substrate;

a joining portion configured to integrate the substrate and the support substrate with each other;

a cavity defined by a lower surface of the substrate, an upper surface of the support substrate, and the joining portion; and

a waveguide defined in a portion in the substrate where the holes are free from being formed, the waveguide being configured to guide the electromagnetic wave having a frequency of 30 GHz or more and 20 THz or less,

wherein the ceramics material is polycrystalline or amorphous,

wherein the substrate has pores each having a pore size of 1 μm or more at a ratio of from 0.5 ppm to 3,000 ppm,

wherein a period of the holes is from 10 μm to 1 mm,

wherein the substrate has a dielectric constant of from 3.6 to 11.5 at from 100 GHz to 10 THz,

wherein the substrate has a dielectric loss of 0.01 or less,

wherein the substrate has a resistivity of 100 kΩ·cm or more,

wherein the ceramics material is one selected from the group consisting of: quartz; aluminum nitride; aluminum oxide; silicon carbide; magnesium oxide; and spinel,

wherein the photonic crystal element is usable as an antenna, a band-pass filter, a coupler, a delay line, or an isolator.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2022
From: KONDO, JUNGO; IWAI, MAKOTO; ASAI, KEIICHIRO; TAI, TOMOYOSHI; TANI, KENTARO
To: NGK INSULATORS, LTD.
Reel/Frame 062009/0653 →
Priority Claims (1)
JP 2020-126208 · Jul 27, 2020 · national
Continuity (2)
Continuation PCTJP2021027594 · Jul 26, 2021
Related Publication 20230112992A1 · Apr 13, 2023
References Cited (28)
US 7228042B2 · McNab · 2007 [cited by examiner]
US 7242839B2 · Sakai et al. · 2007 [cited by applicant]
US 7611578B2 · Morrison et al. · 2009 [cited by applicant]
US 8705920B2 · Tokushima · 2014 [cited by applicant]
US 9496622B2 · Fujita et al. · 2016 [cited by applicant]
US 9632247B2 · Fujita et al. · 2017 [cited by applicant]
US 11137487B1 · Amarloo · 2021 [cited by examiner]
US 20040179803A1 · Bourelle · 2004 [cited by applicant]
US 20040264903A1 · Dridi et al. · 2004 [cited by applicant]
US 20060249070A1 · Morrison et al. · 2006 [cited by applicant]
US 20070280592A1 · Furuya et al. · 2007 [cited by applicant]
US 20080298744A1 · Wang · 2008 [cited by applicant]
US 20150241630A1 · Fujita · 2015 [cited by examiner]
JP 2003227953A · 2003 [cited by applicant]
JP 2005274840A · 2005 [cited by applicant]
JP 2006517735A · 2006 [cited by applicant]
JP 2008299031A · 2008 [cited by applicant]
JP 2009212494A · 2009 [cited by examiner]
JP 2015162787A · 2015 [cited by applicant]
JP 2015187716A · 2015 [cited by applicant]
JP 6281868B2 · 2018 [cited by applicant]
JP 2019082518A · 2019 [cited by applicant]
WO 2010073708A1 · 2010 [cited by applicant]
Hasegawa, Machine Translation of JP 2009-212494 A. (Year: 2009). [cited by examiner]
Japanese Office Action (with English Translation) dated Dec. 6, 2022 (Application No. 2021-567018). [cited by applicant]
International Search Report and Written Opinion (Application No. PCT/JP2021/027594) dated Oct. 12, 2021. [cited by applicant]
English translation of the International Preliminary Report on Patentability (Chapter I) dated Jan. 31, 2023 (Application No. PCT/JP2021/027594). [cited by applicant]
German Office Action (Application No. 11 2021 003 953.9) dated Mar. 14, 2025 (with English translation) (11 pages). [cited by applicant]