Ternary composite material, supercapacitor, and related methods
Ternary composite material, electrode, supercapacitor, and related methods. A ternary composite material includes a scaffold formed of carbon nanotubes (CNT), a first layer of zeolitic imidazolate 8 (ZIF-8) crystals formed on the scaffold of the CNT, and a second layer of molybdenum disulfide (MoS2) flakes formed on the first layer of the ZIF-8 crystals. An electrode can be formed with the ternary composite. A supercapacitor may include one or more electrodes that are at least partly formed of the ternary composite material. Methods of producing the ternary composite material and the electrodes are also disclosed.
1. A ternary composite material comprising:
a scaffold formed of carbon nanotubes (CNT);
a first layer of zeolitic imidazolate 8 (ZIF-8) crystals formed on the scaffold of the CNT; and
a second layer of molybdenum disulfide (MoS 2 ) flakes formed on the first layer of the ZIF-8 crystals,
wherein the ZIF-8 crystals are thiolated, and
wherein sulfur vacancies of the MoS 2 flakes are bound to thiol group binding sites of the ZIF-8 crystals.
2. A supercapacitor comprising an electrode at least partly formed of the ternary composite material of claim 1 .
3. The supercapacitor of claim 2 , wherein the electrode has a specific capacitance of about 262 F/g.
4. The supercapacitor of claim 3 , wherein the electrode retains at least 90 percent of the specific capacitance over 50,000 cycles.
5. The supercapacitor of claim 2 , wherein the electrode has an energy density of about 52.4 Wh/kg measured at a scan rate of 20 mV/s.
6. The supercapacitor of claim 2 , wherein the electrode has a power density of about 3680 W/kg under 100 mV/s.
7. The supercapacitor of claim 2 , wherein the electrode has energy storage mechanisms comprising a surface-controlled capacitive process and a diffusion-controlled redox process with nearly equal contributions at a scan rate of 100 mV/s.
8. A method of producing an electrode of the supercapacitor of claim 2 , the method comprising:
producing a thin film of the ternary composite material;
depositing the thin film on a substrate with a conductive epoxy thereon; and
curing the conductive epoxy, thereby securing the thin film on the substrate.
9. The method of claim 8 , wherein producing the thin film comprises:
vacuum-filtrating a solution comprising the ternary composite material on a porous polytetrafluoroethylene (PTFE) membrane such that the solution diffuses through the membrane while the ternary composite material remains on the membrane and forms the thin film.
10. The method of claim 9 , further comprising:
washing the thin film with ethanol and water; and
heating the thin film for a period of time sufficient to remove impurities therefrom.
11. The method of claim 8 , wherein the ternary composite material is produced by a method comprising:
providing the CNT;
synthesizing the first layer of the ZIF-8 crystals on the CNT to form a binary composite material; and
reacting the binary composite material with the MoS 2 flakes to form the ternary composite material.
12. The method of claim 11 , wherein the CNT are prepared by a high-pressure, gas-phase decomposition of CO (HiPco) process.
13. The method of claim 11 , wherein providing the CNT comprises reacting the CNT and dopamine hydrochloride to form CNT-dopamine complexes.
14. The method of claim 13 , wherein the synthesizing the first layer of the ZIF-8 crystals on the CNT comprises:
combining the CNT-dopamine complexes, dimethylformamide (DMF), zinc chloride, and 1h-1,2,4-triazole-3-thiol in a mixture; and
heating the mixture for a time sufficient to form the first layer of the ZIF-8 crystals on the CNT.
15. The method of claim 11 , wherein the MoS 2 flakes are produced by sonicating bulk MoS 2 crystals in DMF.
16. A method of producing the ternary composite material of claim 1 , the method comprising:
providing the CNT;
synthesizing the first layer of the ZIF-8 crystals on the CNT to form a binary composite material; and
reacting the binary composite material with the MoS 2 flakes to form the ternary composite material.
17. The method of claim 16 , wherein the CNT are prepared by a high-pressure, gas-phase decomposition of CO (HiPco) process.
18. The method of claim 16 , wherein providing the CNT comprises reacting the CNT and dopamine hydrochloride to form CNT-dopamine complexes.
19. The method of claim 18 , wherein the synthesizing the first layer of the ZIF-8 crystals on the CNT comprises:
combining the CNT-dopamine complexes, dimethylformamide (DMF), zinc chloride, and 1h-1,2,4-triazole-3-thiol in a mixture; and
heating the mixture for a time sufficient to form the first layer of the ZIF-8 crystals on the CNT.
20. The method of claim 16 , wherein the MoS 2 flakes are produced by sonicating bulk MoS 2 crystals in DMF.