Resonator shapes for bulk acoustic wave (BAW) devices
A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (F s ) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.
1. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an oval shape with only a single axis of symmetry, and
wherein the portion of the oval shape with only a single axis of symmetry is characterized by a complete oval shape with only a single axis of symmetry.
2. The device of claim 1 , wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
3. The device of claim 1 , wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.
4. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an oval shape with only a single axis of symmetry,
wherein the portion of the oval shape with only one axis of symmetry is characterized by a portion having a non-zero angle α from an axis perpendicular to the axis of symmetry, and
wherein the non-zero angle α ranges from about −30 degrees to about 30 degrees.
5. A resonator circuit device comprising:
a top electrode;
a piezoelectric layer; and
a bottom electrode;
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an oval shape with only a single axis of symmetry, and
wherein the top electrode, the piezoelectric layer, and the bottom electrode are characterized by a portion of an asymmetrical egg shape, the asymmetrical egg shape being subjected to a skew.
6. The device of claim 5 , wherein the asymmetrical egg shape being subjected to a skew is characterized by a portion having a non-zero angle α from an axis perpendicular to the axis of symmetry.
7. The device of claim 4 , wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
8. The device of claim 4 , wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.
9. The device of claim 5 , wherein the top electrode and bottom electrode include molybdenum (Mo), ruthenium (Ru), tungsten (W), or aluminum-copper (AlCu).
10. The device of claim 5 , wherein the piezoelectric layer includes materials or alloys having at least one of the following: AlN, AlGaN, GaN, InN, InGaN, AlInN, AlInGaN, ScAlN, ScGaN, AlScYN, and BN.