OLED panel with trench overhang structures
Embodiments described herein generally relate to sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes substrate, pixel-defining layer (PDL) structures disposed over the section of the substrate, inorganic or metal overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. The PDL structures include a trench disposed in the top surface of the PDL structure. Each sub-pixel includes an anode, an OLED material disposed over and in contact with the anode, and a cathode disposed over the OLED material. The inorganic or metal overhang structures have an overhang extension that extends laterally over the trench. An encapsulation layer is disposed over the cathode and extends under at least a portion of the inorganic or metal overhang structures and along a top surface of the PDL structures.
1. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising a non-conductive material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second inorganic overhangs, each of the first and second inorganic overhangs defined by an overhang extension of an inorganic layer disposed on sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second PDL overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, and the overhang extension of the inorganic layer; and
a cathode disposed on the OLED material disposed over:
the anode;
the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the inorganic layer.
2. The device of claim 1 , further comprising an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the inorganic layer;
an underside surface of each overhang extension of the inorganic layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
3. The device of claim 2 , further comprising a global passivation layer disposed over the encapsulation layer and the first and second PDL structures.
4. The device of claim 1 , wherein the device comprises a line-type architecture.
5. The device of claim 4 , wherein the cathode of each sub-pixel in the line-type architecture contacts a common cathode.
6. The device of claim 1 , wherein the non-conductive material is an organic material.
7. The device of claim 1 , wherein the non-conductive material is an inorganic material.
8. The device of claim 7 , wherein the inorganic material comprises silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxynitride (Si 2 N 2 O), magnesium fluoride (MgF 2 ) or combinations thereof.
9. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising a non-conductive material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second inorganic overhangs, each of the first and second inorganic overhangs defined by an overhang extension of an inorganic layer disposed on sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second PDL overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, and the overhang extension of the inorganic layer;
a cathode disposed on the OLED material disposed over:
the anode;
the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the inorganic layer; and
an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the inorganic layer;
an underside surface of each overhang extension of the inorganic layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
10. The device of claim 9 , further comprising a global passivation layer disposed over the encapsulation layer and the first and second PDL structures.
11. The device of claim 9 , wherein the device comprises a line-type architecture.
12. The device of claim 11 , wherein the cathode of each sub-pixel in the line-type architecture contacts a common cathode.
13. The device of claim 9 , wherein the non-conductive material is an organic material.
14. The device of claim 9 , wherein the non-conductive material is an inorganic material.
15. The device of claim 14 , wherein the inorganic material comprises silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxynitride (Si 2 N 2 O), magnesium fluoride (MgF 2 ) or combinations thereof.
16. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising a non-conductive material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second inorganic overhangs, each of the first and second inorganic overhangs defined by an overhang extension of an inorganic layer disposed on sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second PDL overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures, and the overhang extension of the inorganic layer; and
a cathode disposed on the OLED material disposed over:
the anode;
the inorganic layer disposed on the sidewalls and the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the inorganic layer, wherein the cathode of each sub-pixel in the line-type architecture contacts a common cathode.
17. The device of claim 1 , further comprising an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the inorganic layer;
an underside surface of each overhang extension of the inorganic layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
18. The device of claim 16 , further comprising a global passivation layer disposed over the encapsulation layer and the first and second PDL structures.
19. The device of claim 16 , wherein the non-conductive material is an organic material.
20. The device of claim 16 , wherein the non-conductive material is an inorganic material.