Substrate treating apparatus and substrate treating method
Disclosed is a substrate treating apparatus including a support unit that supports and rotates a substrate, a heating unit including a laser irradiator that irradiates laser light in a pattern formed in the substrate, a movement module that changes a location of the laser irradiator by moving the heating unit, and a controller that controls the support unit and the heating unit, the movement module moves the heating unit between a heating location, at which the laser light is irradiated to the substrate, and a standby location that deviates from the substrate, and the movement module rotates and linearly moves the heating unit.
1 . A substrate treating apparatus comprising:
a support unit configured to support and rotate a substrate;
a heating unit housing a camera module and a laser irradiator, the laser irradiator configured to irradiate laser light in a pattern formed in the substrate;
a movement module configured to change a location of the laser irradiator by moving the heating unit; and
a controller configured to control the support unit and the heating unit,
wherein the movement module moves the heating unit between a heating location, at which the laser light is irradiated to the substrate, and a standby location that deviates from the substrate,
wherein the movement module rotates and linearly moves the heating unit,
wherein the camera module acquires an image when the laser light is irradiated to the substrate,
wherein the controller adjusts a position of the laser irradiator based on the image acquired by the camera module when the laser light is irradiated to the substrate,
wherein the substrate has a plurality of cells, the pattern formed in the substrate includes a first pattern and a second pattern, the first pattern is formed in the plurality of cells, and the second pattern is formed on an outer side of the area, in which the plurality of cells are formed,
wherein the controller controls the movement module to rotate the heating unit to position the laser irradiator at a heating location corresponding to a quadrant of the substrate in which the second pattern is located and to linearly move the heating unit to align the laser irradiator with the second pattern,
wherein the second pattern is pre-positioned at the heating location such that a maximum stroke of the movement module during linear movement is reduced,
wherein the laser irradiator irradiates the laser light to, among the first pattern and the second pattern, the second pattern, and
when the laser irradiator is located within the heating location, a center point of the laser irradiator and a center point of the second pattern coincide with each other.
2 . The substrate treating apparatus of claim 1 , wherein the movement module includes:
a perpendicular movement part configured to linearly move the heating unit; and
a rotation part configured to rotate the heating unit,
wherein the perpendicular movement part includes:
a first driver configured to move the heating unit in a first direction; and
a second driver configured to move the heating unit in a second direction that is perpendicular to the first direction.
3 . The substrate treating apparatus of claim 2 , wherein the movement module further includes a shaft, and
wherein the shaft is disposed between the perpendicular movement part and the rotation part.
4 . The substrate treating apparatus of claim 3 , wherein the laser irradiator is disposed at one end of a bottom surface of the heating unit,
wherein the rotation part is disposed at an opposite end of the bottom surface of the heating unit, and
wherein the movement module rotates the heating unit while the shaft is taken as an axis thereof.
5 . The substrate treating apparatus of claim 1 , wherein the substrate includes a plurality of division surfaces,
wherein the pattern is located on any one of the plurality of division surfaces of the substrate, and
wherein the controller rotates the support unit such that the division surface of the substrate, on which the pattern is located, is located in an area that is adjacent to the heating unit.
6 . The substrate treating apparatus of claim 5 , wherein the laser irradiator is moved by the first driver by a first movement distance in the first direction, and
wherein the first movement distance corresponds to a length of the one of the plurality of division surfaces of the substrate in the first direction.
7 . The substrate treating apparatus of claim 6 , wherein the laser irradiator is moved by the second driver by a second movement distance in the second direction, and
wherein the second movement distance corresponds to a length of the one of the plurality of division surfaces of the substrate in the second direction.
8 . The substrate treating apparatus of claim 1 , wherein the controller controls the heating unit such that a deviation between a line width of the first pattern and a line width of the second pattern is minimized by irradiating the laser light to the second pattern.
9 . The substrate treating apparatus of claim 1 , wherein the first pattern is a monitoring pattern of an exposure pattern formed in the cell, and the second pattern is a condition setting pattern of the substrate treating apparatus.
10 . The substrate treating apparatus of claim 1 , wherein the controller controls the movement module such that the heating unit is moved perpendicularly after being rotated.