Semiconductor package and method of fabricating the same
A semiconductor package includes a semiconductor chip on a redistribution substrate and including a body, a chip pad on the body, and a pillar on the chip pad, a connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers, a first passivation layer between the semiconductor chip and the redistribution substrate, and a dielectric layer between the redistribution substrate and the connection substrate. The first passivation layer and the dielectric layer include different materials from each other. A bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of a molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.
1 . A semiconductor package, comprising:
a redistribution substrate;
a semiconductor chip on the redistribution substrate, the semiconductor chip including a body, a chip pad on a bottom surface of the body, and a pillar on a bottom surface of the chip pad;
a connection substrate on the redistribution substrate and surrounding the semiconductor chip, the connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers;
a first passivation layer between the semiconductor chip and the redistribution substrate, the first passivation layer covering a side surface of the pillar;
a molding layer at least partially covering the semiconductor chip, the connection substrate, and the redistribution substrate; and
a dielectric layer between the redistribution substrate and the connection substrate, the dielectric layer covering a side surface of the lower pad,
wherein the first passivation layer and the dielectric layer include different materials from each other, and
wherein a bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of the molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.
2 . The semiconductor package of claim 1 , wherein the pillar includes copper (Cu) and/or tin (Sn).
3 . The semiconductor package of claim 1 , wherein the connection substrate includes:
an upper pad on a top surface of an uppermost one of the base layers;
a via that penetrates at least one of the base layers; and
a wire pattern between the base layers and coupled to the via.
4 . The semiconductor package of claim 3 , wherein
the upper pad and the lower pad include copper, and
the bottom surface of the lower pad protrudes a thickness of about 3 μm to about 10 μm from the bottom surface of the lowermost one of the base layers.
5 . The semiconductor package of claim 1 , wherein the first passivation layer includes at least one selected from a non-conductive film (NCF), a non-conductive paste (NCP), a B-stage under-fill, a capillary under-fill, a fluxing under-fill, and a hybrid under-fill.
6 . The semiconductor package of claim 1 , wherein the dielectric layer includes a photo-imageable dielectric (PID) material,
wherein the photo-imageable dielectric material includes at least one selected from photosensitive polyimide, polybenzoxazole, phenolic polymers, and benzocyclobutene polymers.
7 . The semiconductor package of claim 1 , wherein
the redistribution substrate includes redistribution dielectric layers and redistribution patterns, and
the lower pad and the pillar are in contact with an uppermost one of the redistribution patterns.
8 . The semiconductor package of claim 1 , further comprising a second passivation layer between the body and the first passivation layer, the second passivation layer at least partially covering a side surface of the chip pad,
wherein a bottom surface of the second passivation layer is at a vertical level the same as or higher than a vertical level of the bottom surface of the chip pad.
9 . The semiconductor package of claim 1 , wherein
a thickness of the chip pad is in a range of about 1 μm to about 4 μm, and
a thickness of the pillar is in a range of about 3 μm to about 40 μm.
10 . The semiconductor package of claim 1 , wherein the molding layer is in a space between the semiconductor chip and the connection substrate and is absent in a space between the semiconductor chip and the redistribution substrate.
11 . The semiconductor package of claim 1 , wherein a top surface of the first passivation layer is at a vertical level the same as or higher than a vertical level of the bottom surface of the chip pad.
12 . A semiconductor package, comprising:
a first semiconductor package; and
a second semiconductor package on the first semiconductor package,
wherein the first semiconductor package includes:
a first redistribution substrate;
a first semiconductor chip on the first redistribution substrate, the first semiconductor chip including a body that includes a first surface adjacent the first redistribution substrate and an opposite second surface, a chip pad on the first surface of the body, a first passivation layer at least partially covering the first surface of the body and a side surface of the chip pad, and a pillar below the chip pad;
a second passivation layer between the first semiconductor chip and the first redistribution substrate, the second passivation layer covering a side surface of the pillar;
a connection substrate on the first redistribution substrate, the connection substrate surrounding the first semiconductor chip;
a first molding layer at least partially covering the first semiconductor chip, the connection substrate, and the first redistribution substrate; and
a second redistribution substrate on the first molding layer,
wherein the second semiconductor package includes:
a package substrate on the second redistribution substrate;
a second semiconductor chip on the package substrate; and
a second molding layer at least partially covering the package substrate and the second semiconductor chip,
wherein a thickness of the first passivation layer is less than a thickness of the second passivation layer, and
wherein the first passivation layer and the second passivation layer include different materials from each other.
13 . The semiconductor package of claim 12 , wherein
the connection substrate includes a lower pad protruding from a bottom surface of the connection substrate, and
the first molding layer extends between a top surface of the first redistribution substrate and the bottom surface of the connection substrate, the first molding layer covering a side surface of the lower pad.
14 . The semiconductor package of claim 12 , wherein a bottom surface of the pillar, a bottom surface of the second passivation layer, and a bottom surface of the first molding layer are coplanar with each other.