DC busbar system, laminated DC busbar and DC backplane with super low inductance
A laminated DC busbar, a DC backplane and a DC busbar system with super low inductance is provided. Semiconductor switches may be connected to respective laminated DC busbars. The DC busbar system comprises a DC backplane and at least two laminated DC busbars respectively connected to semiconductor switches. The round-trip inductance between semiconductor switches connected to two adjacent laminated DC busbars via the DC backplane is less than about 7.5 nH.
1 . A laminated direct current (DC) busbar comprising:
a first conductive layer;
a first insulation structure wrapping the first conductive layer;
a second conductive layer;
a second insulation structure wrapping the second conductive layer; and
a bonding layer binding the first insultation structure and the second insulation structure,
the first conductive layer, the second conductive layer and the first insulation structure and the second insulation structure having a bending to form a first portion and a second portion separated by the bending, where the first portion and the second portion are angled relative to each other,
the first portion being configured to connect the laminated DC busbar to a DC backplane, where the DC backplane is connectable to at least one other laminated DC busbar, where the second portion is configured to connect the laminated DC busbar to terminals of an inverter, where the inverter has a switching unit and respective pairs of terminals, each pair having a first terminal and a second terminal;
the first portion having at least three openings for connecting the laminated DC busbar to the DC backplane,
for each of the at least three openings, each of the first conductive layer, the second conductive layer and the first insulation structure and the second insulation structure has an opening at least partially aligned, where a size of the openings in the first insulation structure and the second insulation structure are the same size,
where a conductive layer which electrically connects to the DC backplane alternates based on the at least three openings,
where the conductive layer which electrically connects to the DC backplane through an opening in the first portion extends into the respective opening of the first portion, whereas the conductive layer that does not electrically connect to the DC backplane through the same opening in the first portion surrounds that opening,
the second portion having a plurality of first openings and a plurality of second openings adjacent to an edge facing the terminals of the inverter,
the first openings and the second openings alternating on the first conductive layer, the first openings and the second openings alternating on the second conductive layer,
the first openings of the first conductive layer at least partially aligned with the second openings of the second conductive layer and the second openings of the first conductive layer at least partially aligned with the first openings on the second conductive layer,
the first conductive layer having a plurality of first bushings, each first bushing projecting from the first conductive layer and surrounding a respective the first opening of the first conductive layer, each first bushing configured and dimensioned to contact a respective first terminal of the inverter,
the second conductive layer having a plurality of second bushings, each second bushing projecting from the second conductive layer through the first conductive layer and surrounding a respective the first opening of the second conductive layer, each second bushing configured and dimensioned to contact a respective second terminal of the inverter, and
the first insulation structure and the second insulation structure having third openings at least partially aligned with the first openings and the second openings.
2 . The laminated DC busbar of claim 1 , wherein the first bushings and the second bushings have different heights.
3 . The laminated DC busbar of claim 1 , wherein the second portion has a plurality of first capacitor openings and second capacitor openings, the second capacitor openings comprising at least one lead slit and a plurality of thermal slits, the first capacitor opening and the second capacitor opening alternating on both the first conductive layer and the second conductive layer, such that a first capacitor opening of the first conductive layer aligns with the second capacitor opening of the second conductive layer,
each of the at least one lead slit configured for one of the leads of capacitors to be inserted,
the first insulation structure and the second insulation structure have capacitor openings at least partially aligned with the first capacitor openings and the second capacitor openings,
wherein the capacitors are connected in parallel, and
wherein the laminated DC busbar has greater than a predetermined number of capacitors.
4 . The laminated DC busbar of claim 3 , wherein each slit for a lead is at least partially surrounded by thermal slits.
5 . The laminated DC busbar of claim 1 , wherein the plurality of first capacitor openings has epoxy spacers, respectively configured to a provide creepage barrier.
6 . The laminated DC busbar of claim 3 , wherein the predetermined number is 24.
7 . The laminated DC busbar of claim 1 , wherein the at least three openings in the first portion is 8.
8 . The laminated DC busbar of claim 1 , wherein the first conductive layer and the second conductive layer each have a thickness of about 1 mm.
9 . The laminated DC busbar of claim 1 , wherein the first portion is orthogonal to the second portion.
10 . The laminated DC busbar of claim 3 , wherein a round-trip inductance between the plurality of capacitors and switches of the inverter is less than or equal to about 1.5 nH.
11 . The laminated DC busbar of claim 1 , wherein the second openings in the second portion have epoxy spacers and wherein the openings in a conductive layer in the first portion not making electrical contact with the DC backplane have epoxy spacers.