Semiconductor memory device

1. A semiconductor memory device comprising:

a first word line coupled to a first memory cell;

a second word line coupled to a second memory cell;

a third word line coupled to a third memory cell;

a fourth word line coupled to a fourth memory cell;

a first transistor including a first gate and electrically coupled to the first word line;

a second transistor including a second gate and electrically coupled to the second word line;

a third transistor including a third gate and electrically coupled to the third word line; and

a fourth transistor including a fourth gate and electrically coupled to the fourth word line,

wherein

the first gate is included in a first conductive layer,

the second gate is included in a second conductive layer arranged away from the first conductive layer, and

the third gate and the fourth gate are included in a third conductive layer which is integral and continuous.

2. The semiconductor memory device according to claim 1 , wherein

the first transistor, the second transistor, the third transistor, and the fourth transistor are provided on a substrate,

the third transistor and the fourth transistor are arranged in a first region of the substrate, and

the first transistor and the second transistor are arranged in a second region closer to an end portion side of the substrate than the first region.

3. The semiconductor memory device according to claim 1 , wherein the first conductive layer, the second conductive layer, and the third conductive layer are provided above a substrate at a first distance away from the substrate.

4. The semiconductor memory device according to claim 1 , further comprising a fourth conductive layer provided above the first conductive layer and the second conductive layer,

wherein the first conductive layer and the second conductive layer are electrically coupled by the fourth conductive layer.

5. The semiconductor memory device according to claim 1 , further comprising a fifth conductive layer provided between the first conductive layer and the second conductive layer.

6. The semiconductor memory device according to claim 1 , further comprising a pillar,

wherein the first word line, the second word line, the third word line, and the fourth word line extend in a first direction and are sequentially stacked in a second direction intersecting the first direction, and

the pillar passes through the first word line, the second word line, the third word line, and the fourth word line in the second direction.

7. The semiconductor memory device according to claim 6 , wherein an intersection between the first word line and the pillar functions as the first memory cell, an intersection between the second word line and the pillar functions as the second memory cell, an intersection between the third word line and the pillar functions as the third memory cell, and an intersection between the fourth word line and the pillar functions as the fourth memory cell.

8. The semiconductor memory device according to claim 6 , further comprising a bit line coupled to one end of the pillar,

wherein the bit line is provided between the pillar and the fourth transistor.

9. The semiconductor memory device according to claim 1 , further comprising a first circuit electrically coupled to drains of the first transistor, the second transistor, the third transistor, and the fourth transistor,

wherein the first circuit is configured to supply voltages to the drains.

10. The semiconductor memory device according to claim 1 , further comprising a second circuit electrically coupled to the first gate of the first transistor, the second gate of the second transistor, the third gate of the third transistor, and the fourth gate of the fourth transistor,

wherein the second circuit is configured to supply signal voltages to the first gate, the second gate, the third gate, and the fourth gate based on an address signal.

11. A semiconductor memory device comprising:

a first word line coupled to a first memory cell;

a second word line coupled to a second memory cell;

a third word line coupled to a third memory cell;

a fourth word line coupled to a fourth memory cell;

a fifth word line coupled to a fifth memory cell;

a sixth word line coupled to a sixth memory cell;

a first transistor including a first gate and electrically coupled to the first word line;

a second transistor including a second gate and electrically coupled to the second word line;

a third transistor including a third gate and electrically coupled to the third word line;

a fourth transistor including a fourth gate and electrically coupled to the fourth word line;

a fifth transistor including a fifth gate and electrically coupled to the fifth word line; and

a sixth transistor including a sixth gate and electrically coupled to the sixth word line, wherein

the first gate is included in a first conductive layer,

the second gate is included in a second conductive layer arranged away from the first conductive layer,

the third gate and the fourth gate are included in a third conductive layer which is integral and continuous,

the fifth gate is included in a fourth conductive layer, and

the sixth gate is included in a fifth conductive layer arranged away from the fourth conductive layer.

12. The semiconductor memory device according to claim 11 , wherein

the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor are provided on a substrate,

the fifth transistor and the sixth transistor are arranged in a first region of the substrate,

the first transistor and the second transistor are arranged in a second region closer to an end portion side of the substrate than the first region, and

the third transistor and the fourth transistor are arranged in a third region between the first region and the second region.

13. The semiconductor memory device according to claim 11 , wherein the first conductive layer, the second conductive layer, the third conductive layer, the fourth conductive layer, and the fifth conductive layer are provided above a substrate at a first distance away from the substrate.

14. The semiconductor memory device according to claim 11 , further comprising:

a sixth conductive layer provided above the first conductive layer and the second conductive layer; and

a seventh conductive layer provided above the fourth conductive layer and the fifth conductive layer,

wherein

the first conductive layer and the second conductive layer are electrically coupled by the sixth conductive layer, and

the fourth conductive layer and the fifth conductive layer are electrically coupled by the seventh conductive layer.

15. The semiconductor memory device according to claim 11 , further comprising:

an eighth conductive layer provided between the first conductive layer and the second conductive layer; and

a ninth conductive layer provided between the fourth conductive layer and the fifth conductive layer.

16. The semiconductor memory device according to claim 11 , further comprising a pillar,

wherein the first word line, the second word line, the third word line, the fourth word line, the fifth word line, and the sixth word line extend in a first direction and are sequentially stacked in a second direction intersecting the first direction, and

the pillar passes through the first word line, the second word line, the third word line, the fourth word line, the fifth word line, and the sixth word line in the second direction.

17. The semiconductor memory device according to claim 16 , wherein an intersection between the first word line and the pillar functions as the first memory cell, an intersection between the second word line and the pillar functions as the second memory cell, an intersection between the third word line and the pillar functions as the third memory cell, an intersection between the fourth word line and the pillar functions as the fourth memory cell, an intersection between the fifth word line and the pillar functions as the fifth memory cell, and an intersection between the sixth word line and the pillar functions as the sixth memory cell.

18. The semiconductor memory device according to claim 16 , further comprising a bit line coupled to one end of the pillar,

wherein the bit line is provided between the pillar and the sixth transistor.

19. The semiconductor memory device according to claim 11 , further comprising a first circuit electrically coupled to drains of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor,

wherein the first circuit is configured to supply voltages to the drains.

20. The semiconductor memory device according to claim 11 , further comprising a second circuit electrically coupled to the first gate of the first transistor, the second gate of the second transistor, the third gate of the third transistor, the fourth gate of the fourth transistor, the fifth gate of the fifth transistor, and the sixth gate of the sixth transistor,

wherein the second circuit is configured to supply signal voltages to the first gate, the second gate, the third gate, the fourth gate, the fifth gate, and the sixth gate based on an address signal.