Pixel circuit outputting pulse width signal and optical sensor using the same
There is provided a pixel circuit for performing analog operation including a photodiode, a first temporal circuit, a second temporal circuit and an operation circuit. Within a first interval, the photodiode detects first light energy to be stored in the first temporal circuit. Within a second interval, the photodiode detects second light energy to be stored in the second temporal circuit. Within an operation interval, the first temporal circuit outputs a first detection signal having a first pulse width according to the first light energy and outputs a second detection signal having a second pulse width according to the second light energy for being calculated by the operation circuit.
1. A pixel circuit, comprising:
a photodiode, configured to generate light energy; and
a temporal circuit, configured to convert the light energy generated by the photodiode to a detection signal having a pulse width corresponding to the light energy, the temporal circuit comprising:
a storage capacitor, having a first end coupled to the photodiode, and configured to store the light energy;
a first transistor, configured to be controlled by a control signal to convert the light energy to the detection signal;
a second transistor, coupled between a second end of the storage capacitor and the first transistor; and
a third transistor, coupled between the second end of the storage capacitor and a ground voltage.
2. The pixel circuit as claimed in claim 1 , further comprising a reset transistor
coupled between the photodiode and the temporal circuit, and
configured to reset the temporal circuit.
3. The pixel circuit as claimed in claim 1 , wherein
the control signal is a ramp signal for converting the light energy to the detection signal, and
when the light energy is larger, the pulse width of the detection signal is longer.
4. The pixel circuit as claimed in claim 1 , further comprising a transfer transistor connected between the photodiode and the temporal circuit.
5. The pixel circuit as claimed in claim 1 , further comprising an inverter configured to invert a phase of the detection signal.
6. A pixel circuit, comprising:
a photodiode; and
a temporal circuit, coupled to the photodiode and comprising:
a capacitor, having a first end coupled to the photodiode;
a first transistor, coupled between a voltage source and a node, wherein a controlled terminal of the first transistor is configured to receive a ramp signal for converting energy stored in the capacitor to a detection signal;
a second transistor, coupled between a second end of the capacitor and the node; and
a third transistor, coupled between the node and a ground voltage, and a controlled terminal thereof being coupled to the second end of the capacitor.
7. The pixel circuit as claimed in claim 6 , further comprising a reset transistor
coupled between the photodiode and the temporal circuit, and
configured to reset the temporal circuit.
8. The pixel circuit as claimed in claim 6 , wherein a pulse width of the detection signal is positively related to the energy.
9. The pixel circuit as claimed in claim 6 , further comprising a transfer transistor connected between the photodiode and the temporal circuit.
10. The pixel circuit as claimed in claim 6 , further comprising an inverter connected behind the node.
11. An optical sensor, comprising:
a photodiode, configured to generate light energy; and
a first temporal circuit and a second temporal circuit, both coupled to the photodiode and respectively configured to store the light energy within different time intervals, each of the first temporal circuit and the second temporal circuit comprising:
a capacitor, having a first end coupled to the photodiode;
a first transistor, coupled between a voltage source and a node;
a second transistor, coupled between the node and a second end of the capacitor; and
a third transistor, coupled between the node and a ground voltage, and a controlled terminal thereof being connected to the second end of the capacitor; and
a reset transistor configured to reset the first temporal circuit and the second temporal circuit within the different time intervals.
12. The optical sensor as claimed in claim 11 , wherein the first temporal circuit and the second temporal circuit are respectively configured to output a detection signal, converted from the light energy, within the same operation interval.
13. The optical sensor as claimed in claim 12 , wherein controlled terminals of the first transistor of the first temporal circuit and the second temporal circuit are respectively configured to receive a ramp signal for converting the light energy to the detection signal.
14. The optical sensor as claimed in claim 11 , further comprising a transfer transistor connected between the photodiode and the first and second temporal circuits.
15. The optical sensor as claimed in claim 11 , wherein each of the first temporal circuit and the second temporal circuit further comprises an inverter connected behind the node.
16. The optical sensor as claimed in claim 11 , wherein the second transistors of the first temporal circuit and the second temporal circuit are not conducted simultaneously within the different time intervals.