MEMS resonator
Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
1. An integrated circuit comprising:
a microelectromechanical systems (MEMS) structure having a body that is free to deflect or move in a dimension and one or more electrodes to sense the deflection or movement of the body in the dimension;
the body having an aluminum nitride (AlN) material layer and at least one crystal silicon layer;
the AlN material layer and the at least one crystal silicon layer each characterized as having a second-order contribution to temperature-dependent variation in the deflection or movement of the body; and
the at least one crystal silicon layer configured, in terms of one or more of dopant type, dopant concentration, crystal axis orientation and layer thickness, such that the second-order contribution of the at least one crystal silicon layer has a parabolic characteristic that is inverted relative to the second-order contribution of the AlN material layer, and such that the net second-order contribution to temperature-dependent variation in deflection or movement of the body from both of the AlN material layer and the at least one crystal silicon layer is less than 10 parts-per-million (PPM) throughout an operating temperature range of negative forty-five degrees Celsius through positive eighty-five degrees Celsius.
2. The integrated circuit of claim 1 wherein at least one layer of the at least one crystal silicon layer is a single-crystal silicon layer, doped with phosphorus.
3. The integrated circuit of claim 2 wherein at least one layer of the at least one crystal silicon layer is a polycrystal silicon, doped with phosphorus.
4. The integrated circuit of claim 1 wherein at least one layer of the at least one crystal silicon layer is a degenerately-doped silicon layer having a thickness that is at least twenty times a thickness of the AlN material layer.
5. The integrated circuit of claim 1 wherein the MEMS structure is further characterized as having an anchor and a tether that couples the anchor to the body, and wherein each of the anchor and the tether also have a first degenerately-doped silicon layer and a second degenerately-doped silicon layer with an aluminum nitride material layer therebetween, such that the first degenerately-doped silicon layer of the anchor and the tether forms part of a first electrode of the one or more electrodes and the second degenerately-doped silicon layer of the anchor and the tether forms part of a second electrode of the one or more electrodes, each in absence of a metal electrode layer extending between the anchor and the body.
6. The integrated circuit of claim 1 wherein:
the MEMS structure further comprises a substrate and a lid layer that are coupled to each other so as to hermetically seal the body relative to an atmosphere outside the integrated circuit; and
at least one of the substate and the lid layer is characterized by presence of a first through-layer via in conductive relationship with a first electrode of the one or more electrodes and at least one of the substrate and the lid layer is characterized by presence of a second through-layer via in conductive relationship with a second electrode of the one or more electrodes.
7. The integrated circuit of claim 1 wherein:
the MEMS structure is a resonator, and the body is to deflect resonantly in the dimension when excited;
the one or more electrodes are to convey a signal representing a sensed resonant frequency of the body in the dimension; and
at least one layer of the at least one crystal silicon layer is structured so as to have a predominant crystalline axis that is oriented at a predetermined, non-zero angular offset relative to the dimension.
8. The integrated circuit of claim 7 wherein the MEMS structure is a first MEMS structure, and wherein the integrated circuit further comprises a second MEMS structure, the second MEMS structure being one of a second resonator and a thermistor, the second MEMS structure to sense an operating temperature of the first MEMS structure.
9. The integrated circuit of claim 8 wherein:
the integrated circuit further comprises a circuits die mounted in electrical communication with the one or more electrodes;
the signal is a first signal; and
the circuits die is to receive, from the one or more electrodes, the first signal, is to process the first signal, dependent on the sensed operating temperature of the first MEMS structure, in order to reduce the temperature-dependent variation, as represented in the first signal, and is to generate a processed signal dependent thereon, the processed signal to be output by the integrated circuit.
10. An integrated circuit comprising:
a hermetically-sealed chamber;
a microelectromechanical systems (MEMS) structure within the hermetically-sealed chamber, the MEMS structure having a body that is free to deflect or move in a dimension and one or more electrodes to sense the deflection or movement of the body in the dimension;
one or more external electrical contacts to provide an output signal from the integrated circuit, the output signal being dependent on the sensed deflection or movement of the body in the dimension;
the body having an aluminum nitride (AlN) material layer and at least one crystal silicon layer;
the AlN material layer and the at least one crystal silicon layer each characterized as having a second-order contribution to temperature-dependent variation in the deflection or movement of the body; and
the at least one crystal silicon layer configured, in terms of one or more of dopant type, dopant concentration, crystal axis orientation and layer thickness, such that the second-order contribution of the at least one crystal silicon layer has a parabolic characteristic that is inverted relative to the second-order contribution of the AlN material layer, and such that the net second-order contribution to temperature-dependent variation in deflection or movement of the body from both of the AlN material layer and the at least one crystal silicon layer is less than 10 parts-per-million (PPM) throughout an operating temperature range of negative forty-five degrees Celsius through positive eighty-five degrees Celsius.
11. The integrated circuit of claim 10 wherein at least one layer of the at least one crystal silicon layer is a single-crystal silicon layer, doped with phosphorus.
12. The integrated circuit of claim 10 wherein at least one layer of the at least one crystal silicon layer is a polycrystal silicon, doped with phosphorus.
13. The integrated circuit of claim 10 wherein at least one layer of the at least one crystal silicon layer is a degenerately-doped silicon layer having a thickness that is at least twenty times a thickness of the AlN material layer.
14. The integrated circuit of claim 10 wherein the MEMS structure is further characterized as having an anchor and a tether that couples the anchor to the body, and wherein each of the anchor and the tether also have a first degenerately-doped silicon layer and a second degenerately-doped silicon layer with an aluminum nitride material layer therebetween, such that the first degenerately-doped silicon layer of the anchor and the tether forms part of a first electrode of the one or more electrodes and the second degenerately-doped silicon layer of the anchor and the tether forms part of a second electrode of the one or more electrodes, each in absence of a metal electrode layer extending between the anchor and the body.
15. The integrated circuit of claim 10 wherein:
the MEMS structure further comprises a substrate and a lid layer that are coupled to each other so as to hermetically seal the body relative to an atmosphere outside the integrated circuit; and
at least one of the substate and the lid layer is characterized by presence of a first through-layer via in conductive relationship with a first electrode of the one or more electrodes and at least one of the substrate and the lid layer is characterized by presence of a second through-layer via in conductive relationship with a second electrode of the one or more electrodes.
16. The integrated circuit of claim 10 wherein:
the MEMS structure is a resonator, and the body is to deflect resonantly in the dimension when excited; and
at least one layer of the at least one crystal silicon layer is structured so as to have a predominant crystalline axis that is oriented at a predetermined, non-zero angular offset relative to the dimension.
17. The integrated circuit of claim 16 wherein the MEMS structure is a first MEMS structure, and wherein the integrated circuit further comprises a second MEMS structure, the second MEMS structure being one of a second resonator and a thermistor, the second MEMS structure to sense an operating temperature of the first MEMS structure.
18. The integrated circuit of claim 16 wherein:
the MEMS structure is on a first die;
the integrated circuit further comprises a second, circuits die mounted in electrical communication with the one or more electrodes; and
the second, circuits die is to receive, from the one or more electrodes, a first signal, representing the sensed deflection or movement of the body in the dimension, is to process the first signal, dependent on the sensed operating temperature of the first MEMS structure, in order to reduce the temperature-dependent variation, as represented in the first signal, and is to generate the output signal dependent thereon.
19. A method of fabricating an integrated circuit, the method comprising:
forming a microelectromechanical systems (MEMS) structure so as to have a body that is free to deflect or move in a dimension and one or more electrodes to sense the deflection or movement of the body in the dimension;
the body having an aluminum nitride (AlN) material layer and at least one crystal silicon layer;
the AlN material layer and the at least one crystal silicon layer each characterized as having a second-order contribution to temperature-dependent variation in the deflection or movement of the body; and
configuring the at least one crystal silicon layer, in terms of one or more of dopant type, dopant concentration, crystal axis orientation and layer thickness, such that the second-order contribution of the at least one crystal silicon layer has a parabolic characteristic that is inverted relative to the second-order contribution of the AlN material layer, and such that the net second-order contribution to temperature-dependent variation in deflection or movement of the body from both of the AlN material layer and the at least one crystal silicon layer is less than 10 parts-per-million (PPM) throughout an operating temperature range of negative forty-five degrees Celsius through positive eighty-five degrees Celsius.
20. The method of claim 19 wherein the method further comprises:
electrically coupling the one or more electrodes with a circuits die, the circuits die to provide at least one actuation signal to drive the deflection or movement of the body, the MEMS structure thereby being configured to operate as a resonator; and
forming at least one layer of the at least one crystal silicon layer as a single-crystal silicon layer, doped with phosphorus.