Integrated assemblies and methods of forming integrated assemblies
Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 10 18 atoms/cm 3 to about 10 21 atoms/cm 3 . The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.
1. A method of forming an integrated assembly, comprising:
forming a source structure comprising semiconductor material over metal-containing material; additive being within a region of the semiconductor material to a concentration within a range of from 10 18 atoms/cm 3 to 10 21 atoms/cm 3 ; the additive comprising one or more of the group of carbon, oxygen, nitrogen and sulfur;
etching into the region of the semiconductor material utilizing an etchant comprising phosphoric acid; the etching forming an opening which extends into, but not entirely through, the semiconductor material of said region; and
forming a second structure over the source structure and extending into said opening.
2. The method of claim 1 wherein the additive includes the carbon.
3. The method of claim 1 wherein the additive includes the nitrogen.
4. The method of claim 1 wherein the additive includes the oxygen.
5. The method of claim 1 wherein the additive includes the sulfur.
6. The method of claim 1 wherein the second structure comprises insulative material.
7. The method of claim 1 wherein the semiconductor material comprises n-type silicon having n-type dopant therein to a concentration of at least 10 20 atoms/cm 3 .
8. The method of claim 1 wherein the semiconductor material comprises p-type silicon having p-type dopant therein to a concentration of at least 10 20 atoms/cm 3 .
9. A method of forming an integrated assembly, comprising:
forming a stack of alternating first and second levels over a source structure; the first levels comprising sacrificial material and the second levels comprising a first insulative material; the source structure comprising semiconductor material over metal-containing material;
forming a trench which extends through the stack and to a region of the semiconductor material;
providing carbon within the region of the semiconductor material;
removing the sacrificial material of the first levels to leave voids;
forming conductive material within the voids; and
after forming the conductive material, forming a panel within the trench; the panel comprising a second insulative material.
10. The method of claim 9 wherein the carbon is provided to a concentration within a range of from 10 18 atoms/cm 3 to 10 21 atoms/cm 3 .
11. The method of claim 9 wherein the carbon is provided within the region prior to forming the trench.
12. The method of claim 9 wherein the panel consists essentially of the second insulative material.
13. The method of claim 9 wherein the panel separates a first block region of a memory arrangement from a second block region of the memory arrangement.
14. The method of claim 13 wherein the first and second block regions include memory cells, with the individual memory cells including charge-trapping material adjacent channel material; and wherein the channel material is electrically coupled with the source structure.