IP Library › Granted Patent US 12,542,228
Granted Patent B2
US 12,542,228 · App. 18/075,814 · Granted Feb 3, 2026

Die alignment method using magnetic force

Inventors: Sumin Kim (Hwaseong-si, KR); Minwoo Rhee (Seoul, KR); Yongchul Shin (Hwaseong-si, KR); Ilyoung Han (Uiwang-si, KR); Nungpyo Hong (Goyang-si, KR); Seungdon Lee (Seongnam-si, KR); Kyeongbin Lim (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01F13/00H01L23/564H01L25/50
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,542,228
App. No.
18/075,814
Granted
Feb 3, 2026
Kind
B2
Abstract

A die alignment method includes vertically aligning a first die comprising first magnetic patterns and a second die comprising second magnetic patterns with each other using magnetic force between the first magnetic patterns and the second magnetic patterns. Each of the first magnetic patterns and the second magnetic patterns comprises a horizontally magnetically anisotropic material. The first magnetic patterns and the second magnetic patterns do not vertically overlap each other when the first die and the second die are vertically aligned with each other.

Claims (13)

1 . A die alignment method comprising:

vertically aligning a first die comprising first magnetic patterns and a second die comprising second magnetic patterns with each other using magnetic force between the first magnetic patterns and the second magnetic patterns,

wherein each of the first magnetic patterns and the second magnetic patterns comprises a horizontally magnetically anisotropic material, and

wherein the first magnetic patterns and the second magnetic patterns do not vertically overlap each other when the first die and the second die are vertically aligned with each other.

2 . The die alignment method according to claim 1 , wherein the using the magnetic force between the first magnetic patterns and the second magnetic patterns comprises using repulsive force and attractive force.

3 . The die alignment method according to claim 1 , further comprising:

generating a magnetic field to magnetize the first magnetic patterns and the second magnetic patterns.

4 . The die alignment method according to claim 3 , wherein a direction of the magnetic field is parallel to an extension direction of the first die and the second die.

5 . The die alignment method according to claim 3 , wherein the first magnetic patterns and the second magnetic patterns are magnetized in in-plane directions thereof, respectively.

6 . The die alignment method according to claim 1 , wherein:

the first magnetic patterns comprise two upper patterns adjacent to each other; and

the second magnetic patterns comprise a lower pattern disposed in the second die to correspond to a region between the two adjacent upper patterns when the first die and the second die are vertically aligned with each other.

7 . The die alignment method according to claim 6 , wherein opposite side surfaces of the lower pattern are vertically aligned with facing side surfaces of the two upper patterns adjacent to each other, respectively.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2022
From: KIM, SUMIN; RHEE, MINWOO; SHIN, YONGCHUL; HAN, ILYOUNG; HONG, NUNGPYO; LEE, SEUNGDON; LIM, KYEONGBIN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 061996/0005 →
Priority Claims (1)
KR 10-2021-0174778 · Dec 8, 2021 · national
Continuity (1)
Related Publication 20230178280A1 · Jun 8, 2023
References Cited (12)
US 6049974A · Asanasavest · 2000 [cited by applicant]
US 8138868B2 · Arnold · 2012 [cited by examiner]
US 8789267B2 · Peng et al. · 2014 [cited by applicant]
US 9007085B2 · Seo · 2015 [cited by applicant]
US 9012265B2 · Yi et al. · 2015 [cited by applicant]
US 20050007228A1 · Wright · 2005 [cited by examiner]
US 20150022298A1 · Fullerton · 2015 [cited by examiner]
JP 2003203952 · 2003 [cited by applicant]
KR 1020060109597 · 2006 [cited by applicant]
KR 100713579 · 2007 [cited by applicant]
KR 100958654 · 2010 [cited by applicant]
KR 1020210056101 · 2021 [cited by applicant]