METHOD AND APPARATUS FOR FORMING A BLANK MASK AND A LAYER FOR A BLANK MASK

1 . A blank mask, comprising:

a light transmitting substrate;

a light shielding film disposed on the light transmitting substrate; and

a phase shift film disposed between the light transmitting substrate and the light shielding film,

wherein the blank mask comprises a center measuring area based on a center of the light shielding film and an edge measuring area being distant by 20 mm from an edge of the light shielding film,

wherein the center measuring area and the edge measuring area are respectively squares having a side of 20 μm,

wherein the blank mask includes:

a center Rz roughness measured from the center measuring area,

an edge Rz roughness measured from the edge measuring area, and

an Rz roughness non-uniformity of 20% or less expressed by Equation 1-1 below:

Rz Roughness Non-uniformity=(Absolute Value of Difference between Center Rz Roughness and Edge Rz roughness/Center Rz Roughness)×100%   [Equation 1-1].

2 . The blank mask of claim 1 , wherein the edge of the light shielding film is composed of four sides, and

wherein the edge measuring area comprises four edge measuring areas being distant in equivalent intervals from two sides among the four sides.

3 . The blank mask of claim 1 , wherein a center Rsk roughness is measured from the center measuring area,

wherein an edge Rsk roughness is measured from the edge measuring area, and

wherein an Rsk roughness difference of 0.5 nm or less is expressed by Equation 1-2 below:

Rsk Roughness Difference=(Absolute Value of Difference between Center Rsk Roughness and Edge Rsk Roughness)   [Equation 1-2].

4 . The blank mask of claim 1 , wherein a center Rku roughness is measured from the center measuring area,

wherein an edge Rku roughness is measured from the edge measuring area, and

wherein an Rku roughness non-uniformity of 40% or less is expressed by Equation 1-3 below:

Rku Roughness Non-uniformity=(Absolute Value of Difference between Center Rku Roughness and Edge Rku Roughness/Center Rku Roughness)×100%   [Equation 1-3].

5 . The blank mask of claim 1 , wherein the phase shift film comprises:

a second center measuring area based on the center of the phase shift film and a second edge measuring area being distant by 20 mm from the edge of the phase shift film,

a second center thickness measured from the second center measuring area,

a second edge thickness measured from the second edge measuring area, and

a thickness non-uniformity of 1.8% or less as expressed by Equation 2-1 below:

Thickness Non-uniformity=(Absolute Value of Difference between Second Center Thickness and Second Edge Thickness/Second Center Thickness)×100%   [Equation 2-1].

6 . The blank mask of claim 5 , wherein the phase shift film comprises:

a second center transmittance measured from the second center measuring area;

a second edge transmittance measured from the second edge measuring area; and

a transmittance non-uniformity of 5.2% or less as expressed by Equation 2-2 below:

Transmittance Non-uniformity=(Absolute Value of Difference between Second Center Transmittance and Second Edge Transmittance/Second Center Transmittance)×100%   [Equation 2-2].

7 . The blank mask of claim 5 , wherein the phase shift film comprises:

a second center retardation measured from the second center measuring area;

a second edge retardation measured from the second edge measuring area; and

a retardation non-uniformity of 1% or less as expressed by Equation 2-3 below:

Retardation Non-uniformity=(Absolute Value of Difference between Second Center Retardation and Second Edge Retardation/Second Center Retardation)×100%   [Equation 2-3].

8 . The blank mask of claim 1 , wherein the light shielding film comprises:

a center thickness measured from the center measuring area;

an edge thickness measured from a second measuring area; and

a thickness non-uniformity of 2% or less as expressed by Equation 1-4 below:

Thickness Non-uniformity=(Absolute Value of Difference between Center Thickness and Edge Thickness Difference/Center Thickness)×100%   [Equation 1-4].

9 . The blank mask of claim 1 , wherein the light shielding film comprises:

a center optical density measured from the center measuring area;

an edge optical density measured from the edge measuring area; and

an optical density non-uniformity of 2.7% or less expressed by Equation 1-5:

Optical Density Non-uniformity=(Absolute Value of Difference between Center Optical Density and Edge Optical Density/Center Optical Density)×100%   [Equation 1-5].

10 . An apparatus for forming a layer, comprising:

a chamber;

a stage in which a target substrate is placed inside the chamber;

a target unit comprising a raw material target for forming the target substrate; and

a supplementary heater disposed to have an interval from the stage for heating the target substrate.

11 . The apparatus for forming a layer of claim 10 , wherein the target unit is prepared to form the target substrate through a sputtering process,

wherein the supplementary heater is being distant by a value of 50 mm to 250 mm from a side of the stage, and

wherein the stage and the target unit are rotatable.

12 . The apparatus for forming a layer of claim 11 , wherein the sputtering process includes one of a direct current (DC) sputtering process or a radio frequency (RF) sputtering process.

13 . The apparatus for forming a layer of claim 10 , wherein the supplementary heater is configured to heat the target substrate on the stage through heat radiation.

14 . A manufacturing method of a blank mask, comprising:

a first film formation operation of forming a phase shift film on a light transmitting substrate;

applying a first heating power by a supplementary heater to the phase shift film;

forming a light shielding film on the phase shift film; and

applying a second heating power by the supplementary heater to the light shielding film.

15 . The manufacturing method of claim 14 , wherein the first heating power includes an electric power of 0.3 kW to 1.5 kW, and

wherein the second heating power includes an electric power of 0.1 kW to 0.6 kW.

16 . The manufacturing method of claim 14 , wherein the target substrate comprises a light transmitting substrate.

17 . The manufacturing method of claim 14 , wherein the light forming substrate is provided on a stage inside a chamber of an apparatus configured to form layers, and

wherein the first film formation operation is performed by a target unit comprising a raw material target for forming the light transmitting substrate.