Plasma enhanced chemical vapor deposition of graphene on optical fibers
A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD) includes placing the optical fiber in a growth chamber, placing one or more carbon-containing precursors in the growth chamber, forming a reduced pressure in the growth chamber, and flowing methane gas and hydrogen gas into the growth chamber. The method also includes generating a plasma in the growth chamber, forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors, exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma, and forming the one or more graphene sheets on the one or more regions of the optical fiber.
1. A method of growing one or more graphene sheets on one or more regions of an optical fiber using plasma-enhanced chemical vapor deposition (PECVD), the method comprising:
placing the optical fiber in a growth chamber;
providing a shielding structure surrounding the optical fiber;
placing one or more carbon-containing precursors in the growth chamber;
forming a reduced pressure in the growth chamber;
flowing methane gas and hydrogen gas into the growth chamber;
generating a plasma in the growth chamber;
forming a gaseous carbon-containing precursor from the one or more carbon-containing precursors;
exposing the one or more regions of the optical fiber to the methane gas, the hydrogen gas, the gaseous carbon-containing precursor, and the plasma; and
concurrently providing the shielding structure surrounding the optical fiber and forming the one or more graphene sheets on the one or more regions of the optical fiber.
2. The method of claim 1 wherein the one or more carbon-containing precursors comprise one or more solid precursors.
3. The method of claim 1 wherein the one or more carbon-containing precursors comprise benzene, C 6 , or an aromatic compound.
4. The method of claim 1 wherein the gaseous carbon-containing precursor comprises at least one or more of C 2 , C 6 , C 6 H 6 , HCN, or CN.
5. The method of claim 1 wherein, during generation of the plasma, a growth surface of the optical fiber is characterized by a growth temperature less than 500° C.
6. The method of claim 1 wherein the optical fiber comprises a polymer material.
7. The method of claim 1 further comprising forming a nucleation layer in a nucleation region on one of the one or more regions of the optical fiber.
8. The method of claim 7 wherein growing the one or more graphene sheets on the one or more regions of the optical fiber comprises initiating graphene growth on the nucleation layer.
9. The method of claim 1 wherein the shielding structure comprises a plurality of wires surrounding the optical fiber.
10. The method of claim 9 wherein the plurality of wires comprise gold wires.
11. The method of claim 1 wherein:
the plasma is characterized by a peak plasma intensity located at a peak plasma intensity location;
the one or more carbon-containing precursors is located a first position offset from the peak plasma intensity location; and
the optical fiber is located at a second position offset from the peak plasma intensity location.
12. The method of claim 11 wherein the first position is upstream of the peak plasma intensity location and the second position is downstream of the peak plasma intensity location.
13. The method of claim 1 wherein the optical fiber is characterized by a cylindrical periphery and the one or more graphene sheets are formed on the cylindrical periphery.
14. The method of claim 1 wherein the optical fiber comprises a cladding etched optical fiber.
15. The method of claim 1 wherein the optical fiber is positioned in the growth chamber downstream of the plasma.
16. The method of claim 7 wherein the nucleation layer comprises a metal layer.
17. The method of claim 16 wherein the metal layer comprises copper.
18. The method of claim 16 wherein the metal layer comprises gold.
19. The method of claim 16 wherein the metal layer comprises silver.
20. The method of claim 16 wherein the metal layer comprises nickel.