Acoustic wave device
An acoustic wave device includes a support substrate including a cavity portion and a support portion, a piezoelectric film on the support portion and including a first and second main surfaces, a functional electrode on the first main surface, and a heat dissipation film on at least one of the first and second main surfaces and includes a semiconductor or an insulator. The functional electrode includes at least one pair of first and second electrodes. When a thickness of the piezoelectric film is dx and a middle-to-middle distance between the first and second electrodes is p, dx/p is about 0.5 or less. The heat dissipation film overlaps at least a portion of the support portion in plan view. A thermal conductivity of the heat dissipation film is higher than a thermal conductivity of the piezoelectric film, and a thickness of the heat dissipation film is less than the thickness of the piezoelectric film.
1. An acoustic wave device comprising:
a support substrate including a cavity portion and a support portion;
a piezoelectric film provided on the support portion to cover the cavity portion and including a first main surface and a second main surface that face away from each other;
a functional electrode on the first main surface of the piezoelectric film; and
a heat dissipation film on at least one of the first main surface and the second main surface of the piezoelectric film, the heat dissipation film including a semiconductor or an insulator; wherein
the functional electrode includes at least one pair of first and second electrodes that face each other, dx/p is about 0.5 or less where dx is a thickness of the piezoelectric film and p is a middle-to-middle distance between the first electrode and the second electrode that are adjacent to each other, and the heat dissipation film overlaps at least portion of the support portion in plan view, a thermal conductivity of the heat dissipation film is higher than a thermal conductivity of the piezoelectric film, and a thickness of the heat dissipation film is smaller than a thickness of the piezoelectric film;
the piezoelectric film is a lithium niobate film or a lithium tantalate film; and
R≤8 is satisfied when the middle-to-middle distance between the first electrode and the second electrode that are adjacent to each other is p, an average of widths of the first electrode and the second electrode is w, a duty ratio of the functional electrode is De, a thermal conductivity of the functional electrode is Ce, a thickness of the functional electrode is de, the thermal conductivity of the piezoelectric film is Cx, the thickness of the piezoelectric film is dx, the thermal conductivity of the heat dissipation film is Ci, the thickness of the heat dissipation film is di, a thermal conductivity ratio is Rx, De=w/p, and Rx=(Ce×de×De)/(Cx×dx+Ci×di).
2. The acoustic wave device according to claim 1 , wherein the heat dissipation film is on the second main surface of the piezoelectric film and in contact with the support portion of the support substrate.
3. The acoustic wave device according to claim 2 , wherein the heat dissipation film and the support substrate are integral with each other.
4. The acoustic wave device according to claim 1 , wherein the heat dissipation film overlaps an entirety of the cavity portion in plan view.
5. The acoustic wave device according to claim 1 , wherein the heat dissipation film includes a first portion that overlaps the first electrode or the second electrode in plan view and a second portion that overlaps a portion between the first electrode or the second electrode in plan view, and a thickness of at least portion of the second portion is larger than a thickness of the first portion.
6. The acoustic wave device according to claim 1 , wherein the thermal conductivity of the heat dissipation film is equal to or more than about five times the thermal conductivity of the piezoelectric film.
7. The acoustic wave device according to claim 1 , wherein Euler angles (φ, θ, ψ) of the lithium niobate film or the lithium tantalate film as the piezoelectric film are within a range of expression (1), expression (2), or expression (3):
(0°±10°,0° to 20°,any ψ) expression (1);
(0°±10°,20° to 80°,0° to 60°(1−(θ−50) 2 /900) 1/2 ) or (0°±10°,20° to 80°,[180°−60°(1−(θ−50) 2 /900) 1/2 ] to 180°) expression (2); and
(0°±10°,[180°−30°(1−(ψ−90) 2 /8100) 1/2 ] to 180°, any ψ) expression (3).
8. The acoustic wave device according to claim 1 , wherein the thickness of the heat dissipation film is about 25% or less of the thickness of the piezoelectric film.
9. The acoustic wave device according to claim 1 , wherein R≤4 is satisfied.
10. The acoustic wave device according to claim 9 , wherein R≤1 is satisfied.
11. An acoustic wave device comprising:
a support substrate including a cavity portion and a support portion;
a piezoelectric film provided on the support portion to cover the cavity portion and including a first main surface and a second main surface that face away from each other;
a functional electrode on the first main surface of the piezoelectric film; and
a heat dissipation film on at least one of the first main surface and the second main surface of the piezoelectric film; wherein
the functional electrode includes at least one pair of first and second electrodes that face each other, dx/p is about 0.5 or less when dx is a thickness of the piezoelectric film and p is a middle-to-middle distance between the first electrode and the second electrode that are adjacent to each other, the heat dissipation film overlaps at least portion of the support portion in plan view, a thickness of the heat dissipation film is smaller than a thickness of the piezoelectric film, and the heat dissipation film is a silicon film, a silicon nitride film, or a silicon carbide film;
the piezoelectric film is a lithium niobate film or a lithium tantalate film; and
R≤8 is satisfied when the middle-to-middle distance between the first electrode and the second electrode that are adjacent to each other is p, an average of widths of the first electrode and the second electrode is w, a duty ratio of the functional electrode is De, a thermal conductivity of the functional electrode is Ce, a thickness of the functional electrode is de, the thermal conductivity of the piezoelectric film is Cx, the thickness of the piezoelectric film is dx, the thermal conductivity of the heat dissipation film is Ci, the thickness of the heat dissipation film is di, a thermal conductivity ratio is Rx, De=w/p, and Rx=(Ce×de×De)/(Cx×dx+Ci×di).
12. The acoustic wave device according to claim 11 , wherein R≤4 is satisfied.
13. The acoustic wave device according to claim 12 , wherein R≤1 is satisfied.
14. The acoustic wave device according to claim 11 , wherein the heat dissipation film is on the second main surface of the piezoelectric film and in contact with the support portion of the support substrate.
15. The acoustic wave device according to claim 14 , wherein the heat dissipation film and the support substrate are integral with each other.
16. The acoustic wave device according to claim 11 , wherein the heat dissipation film overlaps an entirety of the cavity portion in plan view.
17. The acoustic wave device according to claim 11 , wherein the heat dissipation film includes a first portion that overlaps the first electrode or the second electrode in plan view and a second portion that overlaps a portion between the first electrode or the second electrode in plan view, and a thickness of at least portion of the second portion is larger than a thickness of the first portion.
18. The acoustic wave device according to claim 11 , wherein the thermal conductivity of the heat dissipation film is equal to or more than about five times the thermal conductivity of the piezoelectric film.
19. The acoustic wave device according to claim 11 , wherein Euler angles (φ, θ, ψ) of the lithium niobate film or the lithium tantalate film as the piezoelectric film are within a range of expression (1), expression (2), or expression (3):
(0°±10°,0° to 20°, any ψ) expression(1);
(0°±10°,20° to 80°,0° to 60°(1−(θ−50) 2 /900) 1/2 ) or (0°±10°,20° to 80°,[180°−60°(1−(θ−50) 2 /900) 1/2 ] to 180°) expression(2); and
(0°±10°,[180°−30°(1−(ψ−90) 2 /8100) 1/2 ] to 180°, any ψ) expression (3).
20. The acoustic wave device according to claim 11 , wherein the thickness of the heat dissipation film is about 25% or less of the thickness of the piezoelectric film.