IP Library Granted Patent US 11,997,861
Granted Patent B2
US 11,997,861 · App. 18/100,054 · Granted May 28, 2024

Light-emitting element with fluorescent material, display device, electronic device, and lighting device

Inventors: Satoshi Seo (Kanagawa, JP); Nobuharu Ohsawa (Kanagawa, JP); Shunsuke Hosoumi (Kanagawa, JP); Takahiro Ishisone (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/11H10K2101/10H10K2101/30
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Quick Facts
Patent No.
US 11,997,861
App. No.
18/100,054
Granted
May 28, 2024
Kind
B2
Abstract

A light-emitting element having high emission efficiency which includes a fluorescent material as a light-emitting substance is provided. A light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a light-emitting layer. The light-emitting layer includes a host material and a guest material. The host material has a difference of more than 0 eV and less than or equal to 0.2 eV between a singlet excitation energy level and a triplet excitation energy level. The guest material is capable of emitting fluorescence. The triplet excitation energy level of the host material is higher than a triplet excitation energy level of the guest material.

Claims (57)

1. A light-emitting device comprising:

a first electrode;

a light-emitting layer over the first electrode, the light-emitting layer comprising:

a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and

a second compound; and

a light-emitting material capable of exhibiting fluorescence,

a second electrode over the light-emitting layer,

wherein the first compound comprises a condensed heterocyclic ring having three six-membered rings,

wherein the light-emitting material comprises an anthracene ring,

wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material,

wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material,

wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and

wherein light emitted from the light-emitting layer comprises light emitted from the light-emitting material.

2. The light-emitting device according to claim 1 , wherein the light emitted from the light-emitting layer further comprises light emitted from the first compound.

3. The light-emitting device according to claim 1 , wherein the condensed heterocyclic ring comprises nitrogen.

4. The light-emitting device according to claim 1 , wherein the condensed heterocyclic ring comprises oxygen.

5. The light-emitting device according to claim 1 , further comprising a charge-generation layer over the light-emitting layer, and a first light-emitting unit over the charge-generation layer,

wherein the light-emitting layer is included in a second light-emitting unit.

6. The light-emitting device according to claim 1 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV.

7. An electronic device comprising the light-emitting device according to claim 1 .

8. A light-emitting device comprising:

a first electrode;

a first light-emitting layer over the first electrode, the light-emitting layer comprising:

a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and

a second compound; and

a light-emitting material capable of exhibiting fluorescence,

a second electrode over the first light-emitting layer,

wherein the first compound comprises an acridine skeleton,

wherein the light-emitting material comprises an anthracene ring,

wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material,

wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material,

wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and

wherein light emitted from the first light-emitting layer comprises light emitted from the light-emitting material.

9. The light-emitting device according to claim 8 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV.

10. The light-emitting device according to claim 8 ,

wherein the light-emitting device comprises a first light-emitting unit comprising the first light-emitting layer, a charge-generation layer over the first light-emitting unit, and a second light-emitting unit comprising a second light-emitting layer.

11. The light-emitting device according to claim 10 , wherein the second light-emitting layer has a same structure as the first light-emitting layer.

12. The light-emitting device according to claim 8 , wherein the light emitted from the first light-emitting layer further comprises light emitted from the first compound.

13. An electronic device comprising the light-emitting device according to claim 8 .

14. A light-emitting device comprising:

a first electrode;

a light-emitting layer over the first electrode, the light-emitting layer comprising:

a first compound capable of exhibiting thermally activated delayed fluorescence at room temperature, and

a second compound; and

a light-emitting material capable of exhibiting fluorescence,

a second electrode over the light-emitting layer,

wherein the first compound comprises a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring,

wherein the light-emitting material comprises an anthracene ring,

wherein a triplet excitation energy level of the first compound is higher than a triplet excitation energy level of the light-emitting material,

wherein a singlet excitation energy level of the first compound is higher than a singlet excitation energy level of the light-emitting material,

wherein an emission spectrum of the first compound comprises a region overlapping with an absorption band having a longest wavelength in an absorption spectrum of the light-emitting material, and

wherein light emitted from the light-emitting layer comprises light emitted from the light-emitting material.

15. The light-emitting device according to claim 14 , wherein the π-electron deficient heteroaromatic ring is a triazine ring or a triazole ring.

16. The light-emitting device according to claim 14 , wherein the light emitted from the light-emitting layer further comprises light emitted from the first compound.

17. The light-emitting device according to claim 14 , wherein the π-electron rich heteroaromatic ring and the π-electron deficient heteroaromatic ring are directly bonded to each other.

18. The light-emitting device according to claim 14 , wherein a difference between the singlet excitation energy level and the triplet excitation energy level of the first compound is more than 0 eV and less than or equal to 0.2 eV.

19. An electronic device comprising the light-emitting device according to claim 14 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2023
From: SEO, SATOSHI; OHSAWA, NOBUHARU; HOSOUMI, SHUNSUKE; ISHISONE, TAKAHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 062450/0099 →
Priority Claims (3)
JP 2014-175163 · Aug 29, 2014 · national
JP 2014-240985 · Nov 28, 2014 · national
JP 2015-108786 · May 28, 2015 · national
Continuity (5)
Continuation 16923526 · Jul 8, 2020
Continuation 16513869 · Jul 17, 2019
Continuation 15874950 · Jan 19, 2018
Continuation 14837083 · Aug 27, 2015
Related Publication 20230157042A1 · May 18, 2023