Granted Patent B2

US 12,217,957 · App. 18/104,148 · Granted Feb 4, 2025

Inventors: Vladimir Odnoblyudov (Danville, CA); Cem Basceri (Los Gatos, CA); Shari Farrens (Boise, ID)

Assignee: Qromis, Inc.

H01L21/0242C23C16/24C23C16/303C23C16/345C30B25/18C30B29/06C30B29/406C30B29/68C30B33/06C30B33/08H01L21/02428H01L21/0245H01L21/02488H01L21/02491H01L21/02505H01L21/02532H01L21/0254H01L21/743H01L21/8252H01L23/535H01L29/2003H01L21/76254H01L29/7783H01L29/802

Abstract

Claims (27)

1. A substrate comprising:

a support structure comprising:

a polycrystalline ceramic core;

a first adhesion layer encapsulating the polycrystalline ceramic core;

a conductive layer coupled to the first adhesion layer;

a second adhesion layer coupled to the conductive layer;

a barrier layer encapsulating the first adhesion layer;

the second adhesion layer coupled to the barrier layer; and

the conductive layer coupled to the second adhesion layer;

a bonding layer coupled to the support structure;

a substantially single crystal silicon layer coupled to the bonding layer;

an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer; and

an epitaxial III-V layer coupled to the epitaxial semiconductor layer.

2. The substrate of claim 1 wherein the polycrystalline ceramic core comprises aluminum nitride.

3. The substrate of claim 1 wherein the bonding layer comprises silicon oxide.

4. The substrate of claim 1 wherein the epitaxial semiconductor layer comprises a III-V material.

5. The substrate of claim 4 wherein the epitaxial III-V layer comprises an epitaxial gallium nitride layer.

6. The substrate of claim 5 wherein the epitaxial gallium nitride layer has a thickness of about 5 μm or greater.

7. The substrate of claim 1 wherein the epitaxial semiconductor layer comprises an epitaxial single crystal silicon layer.

8. The substrate of claim 7 further comprising a plurality of vias passing from the epitaxial III-V layer to the epitaxial single crystal silicon layer.

9. The substrate of claim 1 wherein the substantially single crystal silicon layer comprises an exfoliated silicon layer.

10. The substrate of claim 1 wherein the substantially single crystal silicon layer comprises an exfoliated silicon layer and an epitaxial silicon layer grown on the exfoliated silicon layer, and the substantially single crystal silicon layer has a thickness of about 0.5 μm.

11. The substrate of claim 1 wherein:

the first adhesion layer comprises a first tetraethyl orthosilicate (TEOS) layer encapsulating the polycrystalline ceramic core;

the barrier layer comprises a silicon nitride layer;

the second adhesion layer comprises a second TEOS layer; and

the conductive layer comprises a polysilicon layer.

Assignments (1)

Continuity (6)

References Cited (108)