Display device
A display device including a substrate, a light-emitting element, a first transistor, and a second transistor, the first transistor including the first gate electrode on the substrate; a first insulating film on the first gate electrode, a first oxide semiconductor on the first insulating film, and having an area overlapping the first gate electrode, a second insulating film on the first oxide semiconductor, and a first conductive layer on the second insulating film, the second transistor including the first insulating film on the substrate, a second oxide semiconductor on the first insulating film, a second insulating film on the first oxide semiconductor and the second oxide semiconductor, and having a thickness smaller than a thickness of the first insulating film, a second gate electrode on the second insulating film, and having an area overlapping the second oxide semiconductor.
1 . A display device comprising:
a substrate;
a light-emitting element;
a first transistor controlling a current value flowing from a driving power supply line to the light-emitting element; and
a second transistor writing a voltage determining a luminance of the light-emitting element to a first gate electrode of the first transistor,
the first transistor including:
the first gate electrode arranged on the substrate;
a first insulating film arranged on the first gate electrode;
a first oxide semiconductor arranged on the first insulating film, and having an area overlapping the first gate electrode;
a second insulating film arranged on the first oxide semiconductor; and
a first conductive layer arranged on the second insulating film,
the second transistor including:
the first insulating film arranged on the substrate;
a second oxide semiconductor arranged on the first insulating film;
the second insulating film arranged on the first oxide semiconductor and the second oxide semiconductor, and having a thickness smaller than a thickness of the first insulating film;
a second gate electrode arranged on the second insulating film, and having an area overlapping the second oxide semiconductor, wherein
the first oxide semiconductor includes a first channel region, a first high concentration impurity region, and a low concentration impurity region between the first channel region and the first high concentration impurity region,
the low concentration impurity region is in contact with both of the first channel region and the first high concentration impurity region,
the second oxide semiconductor includes a second channel region and a second high concentration impurity region in contact with the second channel region,
the first conductive layer is electrically connected to the light-emitting element,
the first high concentration impurity region and the second high concentration impurity region contain an impurity element at a concentration of about 5×10 13 atoms/cm 3 to 2.5×10 15 atoms/cm 3 , and
the low concentration impurity region contains the impurity element at a concentration of 2.5×10 12 atoms/cm 3 to 5×10 13 atoms/cm 3 .
2 . The display device according to claim 1 , wherein
the thickness of the first insulating film is 250 nm or more and 500 nm or less, and
the thickness of the second insulating film is 100 nm or more and 200 nm or less.
3 . The display device according to claim 1 , wherein
the second transistor further has a second conductive layer on the second insulating film, and
the first gate electrode is electrically connected to the second conductive layer.
4 . The display device according to claim 1 , further comprising:
a third conductive layer between the substrate and the first insulating film, and overlapping the second oxide semiconductor and the second gate electrode.
5 . The display device according to claim 1 , further comprising:
a third transistor electrically connected to the driving power supply line,
the third transistor including:
the first insulating film arranged on the substrate;
a third oxide semiconductor arranged on the first insulating film;
the second insulating film arranged on the third oxide semiconductor; and
a third gate electrode arranged on the second insulating film, and having an area overlapping the third oxide semiconductor.