Three-dimensional metal-insulator-metal (MIM) capacitors and trenches
A method for making a three dimensional (3D) Metal-Insulator-Metal (MIM) capacitor and trenches by etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer; depositing conformal metal in the via or contact hole, the tub, and the trench, wherein the deposited conformal metal forms bottom and sidewall portions of a 3D bottom electrode of a metal-insulator-metal (MIM) capacitor in the tub, and wherein the deposited conformal metal forms a via or contact in the via or contact hole; removing conformal metal and at least a portion of the dielectric layer from a lip of the tub; depositing an insulator layer on the 3D bottom electrode to form an insulator layer of the MIM capacitor; and depositing a metal layer on the insulator layer to form a top electrode of the MIM capacitor.
1 . A device comprising:
a three-dimensional metal-insulator-metal (MIM) capacitor comprising:
a three-dimensional bottom electrode in a dielectric layer;
a top electrode; and
an insulator layer between the top electrode and the three-dimensional bottom electrode;
a trench in the dielectric layer around a perimeter of the three-dimensional MIM capacitor;
a Mx metal layer or silicided poly layer electrically connected to the three-dimensional bottom electrode;
an Mx+1 metal layer or M1 metal layer comprising the top electrode; and
a metal pad electrically connected to the Mx metal layer or silicided poly layer through a via or contact, respectively,
wherein a height of the three-dimensional bottom electrode is smaller than a height of the via or contact.
2 . The device of claim 1 , wherein a difference between the height of the three-dimensional bottom electrode and the height of the via or contact is between about 0.1 μm and about 0.5 μm.
3 . The device of claim 1 , wherein the insulator layer has a substantially uniform thickness between the three-dimensional bottom electrode and the top electrode.
4 . The device of claim 1 , comprising a portion of the dielectric layer between the trench and the three-dimensional MIM capacitor.
5 . The device of claim 4 , wherein the portion of the dielectric layer extends entirely around a perimeter of the three-dimensional MIM capacitor, and wherein the trench extends entirely around a perimeter of the portion of the dielectric layer.
6 . The device of claim 1 , wherein the Mx metal layer or silicided poly layer comprises a metal.
7 . The device of claim 1 , wherein the Mx metal layer or silicided poly layer comprises a silicided poly layer.
8 . The device of claim 1 , wherein the three-dimensional bottom electrode comprises tungsten.
9 . The device of claim 1 , wherein the via or contact comprises tungsten.
10 . A device comprising:
a three-dimensional metal-insulator-metal (MIM) capacitor comprising:
a three-dimensional bottom electrode in a dielectric layer;
a top electrode; and
an insulator layer between the top electrode and the three-dimensional bottom electrode;
a trench in the dielectric layer around a perimeter of the three-dimensional MIM capacitor
an Mx metal layer or silicided poly layer electrically connected to the three-dimensional bottom electrode;
an Mx+1 metal layer or M1 metal layer comprising the top electrode; and
a metal pad electrically connected to the Mx metal layer or silicided poly layer through a trench connection, respectively,
wherein a height of the three-dimensional bottom electrode is smaller than a height of the trench connection.
11 . A device comprising:
a three-dimensional metal-insulator-metal (MIM) capacitor in a dielectric layer, the MIM capacitor comprising:
a tub-shaped bottom electrode in a dielectric layer;
a top electrode; and
an insulator layer between the top electrode and the tub-shaped bottom electrode;
a trench in the dielectric layer around a perimeter of the three-dimensional MIM capacitor;
a Mx metal layer or silicided poly layer electrically connected to the tub-shaped bottom electrode; and
an Mx+1 metal layer or M1 metal layer comprising the top electrode,
wherein a height of the tub-shaped bottom electrode is smaller than a height of the dielectric layer.
12 . The device of claim 11 , wherein a difference between the height of the tub-shaped bottom electrode and the height of the dielectric layer is between about 0.1 μm and about 0.5 μm.
13 . The device of claim 11 , wherein the insulator layer has a substantially uniform thickness between the tub-shaped bottom electrode and the top electrode.
14 . The device of claim 11 , comprising a portion of the dielectric layer between the trench and the three-dimensional MIM capacitor.
15 . The device of claim 14 , wherein the portion of the dielectric layer extends entirely around a perimeter of the three-dimensional MIM capacitor, and wherein the trench extends entirely around a perimeter of the portion of the dielectric layer.
16 . The device of claim 11 , wherein the Mx metal layer or silicided poly layer comprises a metal or a silicided poly layer.
17 . The device of claim 11 , wherein the tub-shaped bottom electrode comprises tungsten.
18 . The device of claim 1 , wherein the trench is a segmented trench.
19 . The device of claim 11 , wherein the trench is a segmented trench.
20 . The device of claim 10 , wherein the trench is a segmented trench.