Semiconductor device and manufacturing method thereof
A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
1 . A semiconductor device comprising:
a gate structure comprising insulating layers and conductive layers that are alternately stacked;
a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy; and
a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
2 . The semiconductor device of claim 1 , further comprising:
a second hydrogen supply layer disposed between the first hydrogen supply layer and the hydrogen blocking layer and having a third hydrogen concentration higher than the second hydrogen concentration.
3 . The semiconductor device of claim 2 , wherein the second hydrogen supply layer comprises an oxygen vacancy.
4 . The semiconductor device of claim 2 , wherein the second hydrogen supply layer comprises oxide or nitride.
5 . The semiconductor device of claim 1 , wherein the first hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride.
6 . The semiconductor device of claim 1 , further comprising:
an interconnection structure disposed between the gate structure and the first hydrogen supply layer.
7 . A semiconductor device comprising:
a gate structure comprising insulating layers and conductive layers that are alternately stacked;
a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
a first hydrogen supply layer disposed over the gate structure and having a first hydrogen concentration;
a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration; and
a second hydrogen supply layer disposed between the first hydrogen supply layer and the hydrogen blocking layer and having a third hydrogen concentration higher than the second hydrogen concentration.
8 . The semiconductor device of claim 7 , wherein at least one of the first hydrogen supply layer and the second hydrogen supply layer comprises an oxygen vacancy.
9 . The semiconductor device of claim 7 , wherein the first hydrogen supply layer comprises oxide or nitride, the second hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride.
10 . The semiconductor device of claim 7 , further comprising:
an interconnection structure disposed between the gate structure and the first hydrogen supply layer.
11 . A semiconductor device comprising:
a gate structure comprising insulating layers and conductive layers that are alternately stacked;
a plurality of channel structures passing through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer;
a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy; and
a second hydrogen supply layer disposed on the first hydrogen supply layer,
wherein the second hydrogen supply layer comprises an oxygen vacancy.
12 . The semiconductor device of 11 , further comprising:
a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration.
13 . The semiconductor device of 12 , wherein the second hydrogen supply layer having a third hydrogen concentration higher than the second hydrogen concentration.
14 . The semiconductor device of 12 , wherein the first hydrogen supply layer comprises oxide or nitride, the second hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride.