Full spectrum white light emitting devices

1. A full spectrum white light emitting device comprising:

a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and

at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip;

wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and

wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.

2. The device of claim 1 , wherein the device generates full spectrum white light having a Correlated Color Temperature and an intensity versus wavelength spectrum, which over a wavelength range 460 nm to 600 nm, a maximum percentage deviation between the normalized intensity of the full spectrum white light emitted by the device compared with the normalized intensity of light of a black-body spectrum or CIE Standard Illuminant D of the same Correlated Color Temperature is less than ±30%.

3. The device of claim 2 , wherein the maximum percentage deviation is less than ±20% or is less than ±10%.

4. The device of claim 1 , wherein the broadband LED flip chip has a bottom face comprising anode and cathode contact pads and a light emitting top face, and wherein the at least one photoluminescence layer covers at least the light emitting top face.

5. The device of claim 4 , comprising a light transmissive material layer between the at least one photoluminescence layer and the light emitting top face of the LED flip chip.

6. The device of claim 4 , wherein the at least one photoluminescence layer is in direct contact with the light emitting top face of the LED flip chip.

7. The device of claim 4 , wherein the LED flip chip comprises light emitting side faces.

8. The device of claim 7 , wherein the at least one photoluminescence layer covers the light emitting side faces of the LED flip chip.

9. The device of claim 7 , comprising a light reflective material covering the light emitting side faces of the LED flip chip.

10. The device of claim 9 , comprising a light transmissive material disposed between the light reflective material and the light emitting side faces of the LED flip chip, and wherein the light transmissive material is enclosed by the light reflective material and the at least one photoluminescence layer.

11. The device of claim 10 , wherein the light transmissive material reduces in thickness in a direction from the top face of the LED flip chip to the bottom face of the LED flip chip.

12. The device of claim 11 , wherein the light transmissive material is arcuate in form.

13. The device of claim 11 , wherein the light transmissive material reduces in thickness substantially linearly.

14. The device of claim 10 , wherein the light reflective material is in direct contact with the light transmissive material.

15. The device of claim 10 , wherein the light transmissive material comprises a layer between the at least one photoluminescence layer and the light emitting top face of the LED flip chip.

16. The device of claim 10 , wherein the light transmissive material is in direct contact with at least one of:

the light reflective material;

the light emitting top face of the LED flip chip;

the light emitting side faces of the LED flip chip; or

the at least one photoluminescence layer.

17. The device of claim 1 , comprising a light transmissive substrate.

18. The device of claim 1 , wherein an intensity of the white light decreases from its maximum value in the orange to red region of the spectrum to about 50% of said maximum value at a wavelength from about 645 nm to about 695 nm.

19. The device of claim 1 , wherein the device comprises a camera flash.

20. The device of claim 1 , wherein the device generates full spectrum white light with a color temperature from 5000 K to 6500 K.

21. A full spectrum camera flash comprising:

a broadband solid-state light source that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm;

a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and

a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm;

wherein the broadband light generated by the broadband solid-state light source is composed of a combination of multiple narrowband light emissions, and

wherein the camera flash generates full spectrum white light having a Correlated Color Temperature and an intensity versus wavelength spectrum, which over a wavelength range 460 nm to 600 nm, a maximum percentage deviation between the normalized intensity of the full spectrum white light emitted by the device compared with the normalized intensity of light of a black-body spectrum or CIE Standard Illuminant D of the same Correlated Color Temperature is less than ±30%.