Light emitting device with determinable shape of output beam

1. A light emitting device, comprising:

a first mirror;

one or more active regions with a first active region adjacent to the first mirror, each of an active region including quantum wells and barriers, each of an active region surrounded by one or more p-n junctions, the one or more active regions including a selected shape structure each with a tunnel junction (TJ);

one or more apertures provided with the selected shape structure;

one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's are created during a regrowth process that is independent of a first growth process of the first mirror, the active region and the one or more TJs;

one or more electrical confinement apertures defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ;

a vertical resonator cavity disposed over the electrical confinement aperture;

a high contrast grating (HCG) operating as a second mirror positioned over the vertical resonator cavity, the HCG configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the VCSEL, the HCG structure being layered on the selected shape structure; and

wherein a shape of the output beam of the light emitting device is determined by a geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and/or additional BTJ's, with a transmission function of the HCG and is designed according to the desired optical transmission function of the application.

2. The light emitting device of claim 1 , wherein the light emitting device is a VCSEL.

3. The VCSEL of claim 2 , wherein, a geometry of the aperture is designed to be slightly elliptical to compensate the beam inside the VCSEL such that the device provides a desirable beam shape as an output beam from the HCG for the application.

4. The VCSEL of claim 2 , wherein a coupling loss of the output beam to an optical fiber or optical system is reduced by selection of the proper BTJ aperture geometry, aperture geometries of the one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's and HCG transmission characteristics.

5. The VCSEL of claim 4 , wherein the HCG controls an output beam polarization and single longitudinal wavelength.

6. The VCSEL of claim 2 , wherein a top DBR is included in the structure between the HCG and buried tunnel junction.

7. The VCSEL of claim 2 , where an external mirror in addition to the HCG is used to further shape the output beam.

8. The VCSEL of claim 2 , wherein the sacrificial layer of semiconductor material is removed via etching at specific locations in order to release the top mirror tuning structure.

9. The VCSEL of claim 8 , wherein when the VCSEL is tunable and the periodic structure is released in order to change an optical length of an optical cavity via an external input that causes movement of the periodic structure.

10. The VCSEL of claim 2 , wherein the top DBR is processed to become a periodic structure configured to resonate and work as a mirror at specific wavelengths.

11. The VCSEL of claim 10 , wherein tuning is achieved via an external input based on thermal, electrostatic or piezoelectric excitation to move HCG 4 .

12. The VCSEL of claim 10 , wherein tunability can be achieved by heating the VCSEL directly or changing its driving current.

13. The VCSEL of claim 10 wherein the VCSEL is at least one of: an air-cavity-dominant (ACD) or a semiconductor-cavity-dominant (SCD) design.

14. A method of creating a light emitting device, comprising:

forming during a first growth process a first mirror, an active region, at least one tunnel junction (TJ), an aperture with a selected shape structure formed by etching and including at least one TJ,

forming a buried tunnel junction (BTJ), one or more TJ's planar structure and/or one or more BTJ's during a regrowth process that is independent of the first growth process of the first mirror, the active region and the TJ;

forming a high contract grating (HCG) operating as a second mirror positioned over the vertical resonator cavity, the HCG configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the VCSEL, the HCG structure being layered on the selected shape structure wherein a shape of the output beam of the light emitting device is determined by a geometric shape of the one or more BTJ apertures and transmission function of the HCG; and

creating a shape of the output beam of the light emitting device by determining geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and/or additional BTJ's, with a transmission function of the HCG and is designed according to the desired optical transmission function of the application.

15. The method of claim 14 , wherein a geometry of the selected shape structure is determined in response to a far field optical transmission function for a desired application.

16. The method of claim 14 , wherein the desired selected is selected from one or more of: communications; optical coherence tomography, medical tissue imaging, 3D sensing, scanning for air borne particles, optical interconnects, lidar, spectroscopy, fiber Bragg integrated sensing; gas sensors; and integration with photonics.

17. The method of claim 14 , wherein the light emitting structure is a VCSEL.