IP Library Granted Patent US 12,372,720
Granted Patent B2
US 12,372,720 · App. 18/109,294 · Granted Jul 29, 2025

Optical power splitters incorporating one or more spiral elements

Inventors: Yusheng Bian (Ballston Lake, NY); Roderick Alan Augur (Saratoga Springs, NY)
Assignee: GlobalFoundries U.S. Inc.
G02B6/125G02B6/1228G02B6/13G02B2006/12061G02B2006/12147G02B2006/1215
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,372,720
App. No.
18/109,294
Granted
Jul 29, 2025
Kind
B2
Abstract

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure comprises a spiral waveguide core having an outer perimeter. The structure further comprises a plurality of waveguide cores. Each waveguide core has a section disposed adjacent to the outer perimeter of the spiral waveguide core.

Claims (30)

1. A structure for an optical power coupler, the structure comprising:

a spiral waveguide core including a plurality of spiral elements that are arranged in a spiral, the spiral elements including an outermost spiral element having an outer radius defining an outer perimeter of the spiral waveguide core; and

a plurality of first waveguide cores, each of the first waveguide cores having a section disposed adjacent to the outer perimeter of the spiral waveguide core.

2. The structure of claim 1 further comprising:

a second waveguide core connected to the outermost spiral element.

3. The structure of claim 1 wherein the spiral elements include an innermost spiral element, and further comprising:

a second waveguide core connected to the innermost spiral element.

4. The structure of claim 1 wherein the spiral waveguide core and the first waveguide cores are disposed in the same plane.

5. The structure of claim 1 wherein the section of each of the first waveguide cores is a taper terminated by an end.

6. The structure of claim 5 wherein the taper of each of the first waveguide cores has a longitudinal axis that is aligned perpendicular to a tangent at a point on the outer perimeter of the spiral waveguide core.

7. The structure of claim 5 wherein the taper of each of the first waveguide cores has a longitudinal axis that is aligned tangential to a point on the outer perimeter of the spiral waveguide core.

8. The structure of claim 5 wherein the taper of each of the first waveguide cores has a longitudinal axis that is aligned at an acute angle relative to a point on the outer perimeter of the spiral waveguide core.

9. The structure of claim 1 wherein the spiral waveguide core comprises a first material, and the first waveguide cores comprise a second material different from the first material.

10. The structure of claim 9 wherein the first material is silicon, and the second material is silicon nitride.

11. The structure of claim 9 wherein the first material is silicon nitride, and the second material is silicon.

12. The structure of claim 1 wherein the spiral waveguide core and the first waveguide cores include a lower layer and an upper layer stacked over the lower layer, the upper layer comprises a first material, the lower layer comprises a second material different from the first material, and the lower layer is separated from the upper layer by dielectric material.

13. The structure of claim 12 wherein the spiral waveguide core comprises silicon, and the first waveguide cores comprise silicon nitride.

14. The structure of claim 1 further comprising:

a dielectric layer over the spiral waveguide core,

wherein the first waveguide cores are disposed on the dielectric layer.

15. The structure of claim 1 further comprising:

a dielectric layer over the first waveguide cores,

wherein the spiral waveguide core is disposed on the dielectric layer.

16. The structure of claim 15 wherein the spiral waveguide core comprises silicon nitride, and the first waveguide cores comprise silicon.

17. The structure of claim 1 wherein the first waveguide cores number four or more.

18. The structure of claim 1 wherein the spiral elements are continuously wound in the spiral with a continuously decreasing radius from the center point.

19. The structure of claim 18 wherein the spiral is an Archimedes spiral.

20. A method of forming a structure for an optical power coupler, the method comprising:

forming a spiral waveguide core including a plurality of spiral elements that are arranged in a spiral, wherein the spiral elements include an outermost spiral element having an outer radius defining an outer perimeter of the spiral waveguide core; and

forming a plurality of waveguide cores, wherein each waveguide core has a section disposed adjacent to the outer perimeter of the spiral waveguide core.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2023
From: BIAN, YUSHENG; AUGUR, RODERICK ALAN
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 062683/0307 →
Continuity (1)
Related Publication 20240272359A1 · Aug 15, 2024
References Cited (25)
US 5835458A · Bischel · 1998 [cited by examiner]
US 10468849B1 · Bradley · 2019 [cited by examiner]
US 11079544B2 · Bian et al. · 2021 [cited by applicant]
US 11353654B2 · Bian · 2022 [cited by applicant]
US 20030070833A1 · Barth · 2003 [cited by examiner]
US 20060104592A1 · Jenkins · 2006 [cited by examiner]
T. Chrysostomidis et al., “480 Gbps WDM Transmission Through an Al2O3:Er3+ Waveguide Amplifier,” in Journal of Lightwave Technology, vol. 40, No. 3, pp. 735-743, 1 Feb. 1, 2022, doi: 10.1109/JLT.2021.3121467. [cited by applicant]
W. Jin et al., “Ultra-low frequency noise spiral-cavity hybrid-integrated laser,” 2022 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, USA, 2022, pp. 1-2. [cited by applicant]
Matteo Cherchi et al., “Chiral spiral waveguides based on MMI crossings: theory and experiments”, Proceedings vol. 9752, Silicon Photonics XI, 975215 (Mar. 14, 2016); https://doi.org/10.1117/12.2210945, 7 pages. [cited by applicant]
Botter R et al., “Guided-acoustic stimulated Brillouin scattering in silicon nitride photonic circuits.” Sci Adv. Oct. 7, 2022;8(40):eabq2196. doi: 10.1126/sciadv.abq2196. Epub Oct. 7, 2022. PMID: 36206345; PMCID: PMC95… [cited by applicant]
European Patent Office, Extended European Search Report and Opinion issued in European Patent Application No. 23190713.0 on Jan. 16, 2024; 9 pages. [cited by applicant]
W. Bogaerts et al., “Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 16, No. 1, pp. 33-44, Jan.-Feb. 2010, doi: 10.1109/JSTQE.2009.… [cited by applicant]
Harish Subbaraman, Xiaochuan Xu, Amir Hosseini, Xingyu Zhang, Yang Zhang, David Kwong, and Ray T. Chen, “Recent advances in silicon-based passive and active optical interconnects,” Optics Express 23, 2487-2511 (2015). [cited by applicant]
K. Giewont et al., “300-mm Monolithic Silicon Photonics Foundry Technology,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 25, No. 5, pp. 1-11, Sep.-Oct. 2019, Art No. 8200611, doi: 10.1109/JSTQE.2019.… [cited by applicant]
M. Rakowski et al., “45nm CMOS—Silicon Photonics Monolithic Technology (45CLO) for next-generation, low power and high speed optical interconnects,” in Optical Fiber Communication Conference (OFC) 2020, OSA Technical Di… [cited by applicant]
B. Peng et al., “A Cmos Compatible Monolithic Fiber Attach Solution with Reliable Performance and Self-alignment,” In Optical Fiber Communication Conference (OFC) 2020, OSA Technical Digest (Optica Publishing Group, 202… [cited by applicant]
Y. Bian et al., “Towards low-loss monolithic silicon and nitride photonic building blocks in state-of-the-art 300mm CMOS foundry,” in Frontiers in Optics / Laser Science, B. Lee, C. Mazzali, K. Corwin, and R. Jason Jone… [cited by applicant]
Y. Bian et al., “Hybrid III-V laser integration on a monolithic silicon photonic platform,” in Optical Fiber Communication Conference (OFC) 2021, P. Dong, J. Kani, C. Xie, R. Casellas, C. Cole, and M. Li, eds., OSA Tech… [cited by applicant]
Y. Bian et al., “3D Integrated Laser Attach Technology on 300-mm Monolithic Silicon Photonics Platform,” 2020 IEEE Photonics Conference (IPC), 2020, pp. 1-2, doi: 10.1109/IPC47351.2020.9252280. [cited by applicant]
Y. Bian et al., “Monolithically integrated silicon nitride platform,” in Optical Fiber Communication Conference (OFC) 2021, P. Dong, J. Kani, C. Xie, R. Casellas, C. Cole, and M. Li, eds., OSA Technical Digest (Optica P… [cited by applicant]
Y. Bian et al., “3D silicon photonic interconnects and integrated circuits based on phase matching,” 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 2021, pp. 2279-2284, doi: 10.1109/ECTC32696.202… [cited by applicant]
Y. Bian et al., “Light manipulation in a monolithic silicon photonics platform leveraging 3D coupling and decoupling,” in Frontiers in Optics / Laser Science, B. Lee, C. Mazzali, K. Corwin, and R. Jason Jones, eds., OSA… [cited by applicant]
A. Aboketaf et al., “Towards fully automated testing and characterization for photonic compact modeling on 300-mm wafer platform,” in Optical Fiber Communication Conference (OFC) 2021, P. Dong, J. Kani, C. Xie, R. Casel… [cited by applicant]
Bian, Yusheng “Waveguide Absorbers” filed on May 6, 2022 as a U.S. Appl. No. 17/738,156. [cited by applicant]
Bian, Yusheng et al., “Photonic Integrated Circuit Including Plurality of Discrete Optical Guard Elements” filed on Sep. 16, 2022 as a U.S. Appl. No. 17/932,868. [cited by applicant]