Ion beam target assemblies for neutron generation
Provided herein are systems, devices, articles of manufacture, and methods for generating neutrons employing a high energy ion beam target (HEM target) and a target backing configured to be in contact with the bottom surface of the HEIB target (e.g., to generate an ion beam target assembly). In certain embodiments, the HEM target has a thickness that is less than the penetration depth of protons or deuterons in the high energy ion beam that strikes the target. In certain embodiments, the target backing comprises a high hydrogen diffusion metal (e.g., palladium), has open spaces dispersed throughout for reduced proton diffusion distances, and has a shape and thickness such that all, or virtually all, of the protons or deuterons that pass through the HEIB target are stopped. Also provided herein are systems, devices, and methods for changing targets in an ion beam accelerator system.
1. A method comprising:
inserting a first target, from a set of at least two targets, into an ion beam accelerator,
activating the ion beam accelerator for a length of time such that an ion beam strikes the first target, thereby generating neutrons and causing the first target to become a first radioactive target;
removing the first radioactive target from the ion beam accelerator;
inserting a second target, from the set of at least two targets, into the ion beam accelerator;
activating the ion beam accelerator for a length of time such that an ion beam strikes the second target, thereby generating neutrons and causing the second target to become a second radioactive target;
identifying that the first radioactive target has cooled over time to become substantially or fully non-radiative to generate a cooled first target, and inserting the cooled first target into the ion beam accelerator; and
activating the ion beam accelerator for a length of time such that an ion beam strikes the cooled first target, thereby generating neutrons and causing the first cooled target to become a re-radioactive first target.
2. The method of claim 1 , wherein the method further includes identifying that the second radioactive target has cooled over time to become substantially or fully non-radiative to generate a cooled second target, and inserting the cooled second target into the ion beam accelerator.
3. The method of claim 1 , wherein the at least two targets includes the first target, the second target, and a third target; and wherein the method further includes inserting the third target into the ion beam accelerator and activating the ion beam accelerator for a length of time such that an ion beam strikes the third target, thereby generating neutrons and causing the third target to become a third radioactive target.
4. The method of claim 3 , wherein the at least two targets is at least five targets.
5. The method of claim 4 , wherein the at least two targets is at least ten targets.
6. The method of claim 1 , wherein activating the ion beam accelerator for the length of time such that the ion beam strikes the first target is conducted continuously for at least 2 days.
7. The method of claim 6 , wherein activating the ion beam accelerator for the length of time such that the ion beam strikes the first target is conducted continuously for at least 14 days.
8. The method of claim 1 , wherein the first target includes a metal selected from the group consisting of beryllium, uranium, lithium, tungsten, and tantalum.
9. The method of claim 8 , wherein metal has a thickness in a range of from 2 mm to 25 mm, and a diameter in a range of from 25 mm to 150 mm.
10. The method of claim 8 , wherein the first target further includes a backing coupled to the metal, wherein the backing has a plurality of open spaces.
11. The method of claim 10 , wherein the plurality of open spaces is gas or vacuum filled.
12. The method of claim 11 , wherein the plurality of open spaces are selected from: pores, grooves, holes, corrugations, channels, open cells, honeycomb cells, irregular openings, or any combination thereof.
13. The method of claim 11 , wherein the backing is selected from the group consisting of palladium, titanium, vanadium, niobium, and zirconium.
14. The method of claim 10 , wherein a thickness of the backing is in a range of from 2 mm to 10 mm.
15. The method of claim 10 , wherein the backing comprises a core of vanadium that is coated with a film of palladium.
16. The method of claim 10 , wherein the first target further includes a substrate coupled to the backing; wherein the backing is positioned between the metal and the substrate.
17. The method of claim 16 , wherein the method further comprises cooling the substrate of the first target with a liquid as the ion beam strikes the first target.
18. The method of claim 16 , wherein the substrate comprises cooper and/or aluminum.
19. The method of claim 1 , wherein the ion beam includes protons or deuterons with an energy of 2 MeV or greater.
20. The method of claim 1 , wherein inserting the first target, removing the first target, and inserting the second target is performed by a target changing mechanism.