Active photonic devices incorporating high dielectric constant materials
An optical switch structure includes at least one optical input port and at least one optical output port. The optical switch structure also includes an optical waveguide structure including a waveguide core and a waveguide cladding The optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port. The waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient and the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.
1. An optical switch structure comprising:
at least one optical input port;
at least one optical output port;
an optical waveguide structure including a waveguide core and a waveguide cladding, wherein the optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port, wherein:
waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient; and
the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.
2. The optical switch structure of claim 1 wherein the first electro-optic coefficient and the second electro-optic coefficient are a Kerr coefficient χ (3) .
3. The optical switch structure of claim 1 wherein the first electro-optic coefficient and the second electro-optic coefficient are a Pockels coefficient χ (2) .
4. The optical switch structure of claim 1 wherein the waveguide core supports a guided mode characterized by an optical power, wherein a majority of the optical power is contained in the waveguide core.
5. The optical switch structure of claim 1 wherein the waveguide core comprises silicon.
6. The optical switch structure of claim 1 wherein the at least one optical input port comprises a first optical input port and a second optical input port.
7. The optical switch structure of claim 1 wherein the at least one optical output port comprises a first optical output port and a second optical output port.
8. The optical switch structure of claim 1 wherein the optical waveguide structure comprises a Mach-Zehnder interferometer.
9. The optical switch structure of claim 1 wherein the at least one optical input port is optically coupled to a 50/50 beam splitter.
10. The optical switch structure of claim 1 wherein the at least one optical output port is optically coupled to a 50/50 beam splitter.
11. The optical switch structure of claim 1 wherein the optical waveguide structure includes a phase adjustment section.
12. The optical switch structure of claim 11 wherein an index of refraction of the phase adjustment section is configured to vary in response to an applied voltage.
13. The optical switch structure of claim 1 further comprising:
a first electric contact and a second electrical contact configured to generate an applied electric field produced in the optical waveguide structure that is characterized by a direction; and
the waveguide cladding is characterized by an electro-optic coefficient tensor having a maximum value aligned along the direction.
14. The optical switch structure of claim 13 wherein a guided mode supported by the waveguide core has a direction of polarization aligned with the direction.
15. The optical switch structure of claim 13 wherein the waveguide cladding is characterized by a DC Kerr effect and a Pockels effect having a same sign.
16. The optical switch structure of claim 13 wherein a DC Kerr effect is positive and a Pockels effect is positive.
17. The optical switch structure of claim 16 wherein the waveguide cladding comprises a first material type, a majority of polarization domains are aligned with a positive z-direction, and a direction of the applied electric field is negative.
18. The optical switch structure of claim 16 wherein the waveguide cladding comprises a first material type, a majority of polarization domains are aligned with a negative z-direction, and a direction of the applied electric field is positive.
19. The optical switch structure of claim 16 wherein the waveguide cladding comprises a second material type, a majority of polarization domains are aligned with a positive z-direction, and a direction of the applied electric field is positive.
20. The optical switch structure of claim 16 wherein the waveguide cladding comprises a second material type, a majority of polarization domains are aligned with a negative z-direction, and a direction of the applied electric field is negative.