Light-emitting device with a plurality of concave parts on the edge of the semiconductor mesa

1. A light-emitting device, including:

a substrate including a top surface, a first edge, a second edge, a third edge, and a fourth edge, wherein the first edge and the second edge are formed on opposite sides of the light-emitting device, and the third edge and the fourth edge are formed on opposite sides of the light-emitting device;

a semiconductor mesa formed on the top surface of the substrate, including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer, wherein in a top view of the light-emitting device, the semiconductor mesa includes a first outer periphery adjacent to the first edge, a second outer periphery adjacent to the second edge, a third outer periphery adjacent to the third edge, and a fourth outer periphery adjacent to the fourth edge;

a first electrode pad formed adjacent to the first edge; and

a second electrode pad formed adjacent to the second edge,

wherein the fourth outer periphery includes a first concave part and a first convex part formed adjacent to the first edge, and a second concave part and a second convex part formed adjacent to the second edge, and

wherein a first space between one side of the first convex part and the fourth edge is smaller than a second space between one side of the second convex part and the fourth edge.

2. The light-emitting device according to claim 1 , wherein the first semiconductor layer adjacent to the first edge includes a first sidewall separated from the first edge by a first distance, the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second edge of the substrate by a second distance, and the first distance is smaller than the second distance.

3. The light-emitting device according to claim 2 , wherein a first angle is between the first sidewall of the first semiconductor layer and the top surface of the substrate, a second angle is between the second sidewall of the first semiconductor layer and the top surface of the substrate, and the second angle is different from the first angle.

4. The light-emitting device according to claim 3 , wherein the first angle is larger than the second angle.

5. The light-emitting device according to claim 4 , wherein the first angle is between 70 degrees and 90 degrees.

6. The light-emitting device according to claim 4 , wherein the second angle is between 20 degrees and 70 degrees.

7. The light-emitting device according to claim 2 , wherein the second distance is larger than 5 μm and less than 50 μm.

8. The light-emitting device according to claim 7 , wherein the second distance is less than 30 μm.

9. The light-emitting device according to claim 2 , further including an insulating layer formed on the semiconductor mesa, wherein the first sidewall and the second sidewall of the first semiconductor layer are covered by the insulating layer.

10. The light-emitting device according to claim 9 , wherein the insulating layer includes openings exposing the first semiconductor layer at positions respectively corresponding the first concave part and second concave part.

11. The light-emitting device according to claim 10 , wherein a distance between adjacent two of the openings of the insulating layer is greater than a width of the opening of the insulating layer.

12. The light-emitting device according to claim 11 , wherein the distance is more than one times the width.

13. The light-emitting device according to claim 1 , further comprising a recess exposing the first semiconductor layer and surrounding the second semiconductor layer and the active layer; and a bottom electrode covering the second semiconductor layer, the active layer and the first semiconductor layer exposed on the recess.

14. The light-emitting device according to claim 13 , wherein the recess continuously surrounds the second semiconductor layer and the active layer.

15. The light-emitting device according to claim 13 , wherein the recess discontinuously surrounds the second semiconductor layer and the active layer.

16. The light-emitting device according to claim 1 , wherein a third space is between a side of the first convex part and a side of the first concave part, and a fourth space is between the second concave part and the second convex part.

17. The light-emitting device according to claim 1 , wherein the third space and the fourth space include same distance.

18. The light-emitting device according to claim 1 , wherein the third space and the fourth space include different distances.

19. The light-emitting device according to claim 1 , wherein the fourth outer periphery includes wavy shape, zigzag shape, or square shape.

20. The light-emitting device according to claim 19 , wherein the first outer periphery, the second outer periphery, and the third outer periphery each includes wavy shape, zigzag shape, or square shape.