Display device having an oxide semiconductor transistor
An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
1. A display device comprising:
a first pixel electrically connected to a signal line and a first scan line, wherein the first pixel comprises a first transistor and a pixel electrode electrically connected to the first transistor; and
a second pixel adjacent to the first pixel, the second pixel electrically connected to the signal line and a second scan line,
wherein no conductive layer is provided under the signal line in a region between the first scan line and the second scan line,
wherein the first transistor comprises:
a gate layer comprising copper;
a first insulating layer over the gate layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen; and
an oxide semiconductor layer over and in contact with a top surface of the second insulating layer, the oxide semiconductor layer comprising indium, gallium, and zinc,
wherein a third insulating layer is positioned over and in contact with a top surface of the oxide semiconductor layer, the third insulating layer comprising silicon and oxygen,
wherein the oxide semiconductor layer comprises a channel formation region of the first transistor,
wherein the signal line comprises:
a first conductive layer comprising any one of titanium, molybdenum, and tungsten; and
a second conductive layer over the first conductive layer, the second conductive layer comprising copper,
wherein the signal line comprises a first region comprising a convex shape and a second region comprising a convex shape,
wherein the signal line and the first scan line intersect in the first region,
wherein the signal line and the second scan line intersect in the second region,
wherein the signal line is substantially entirely flat in the region between the first region and the second region,
wherein the signal line and the oxide semiconductor layer overlap each other in the first region,
wherein the first conductive layer comprises a region in contact with the top surface of the oxide semiconductor layer in the first region, and
wherein the signal line comprises a region not overlapping with the oxide semiconductor layer, in the region between the first region and the second region.
2. A display device comprising:
a first pixel electrically connected to a signal line and a first scan line, wherein the first pixel comprises a first transistor and a pixel electrode electrically connected to the first transistor; and
a second pixel adjacent to the first pixel, the second pixel electrically connected to the signal line and a second scan line,
wherein no conductive layer is provided under the signal line in a region between the first scan line and the second scan line,
wherein the first transistor comprises:
a gate layer comprising copper;
a first insulating layer over the gate layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen; and
an oxide semiconductor layer over and in contact with a top surface of the second insulating layer, the oxide semiconductor layer comprising indium, gallium, and zinc,
wherein a third insulating layer is positioned over and in contact with a top surface of the oxide semiconductor layer, the third insulating layer comprising silicon and oxygen,
wherein the oxide semiconductor layer comprises a channel formation region of the first transistor,
wherein the signal line comprises:
a first conductive layer comprising a region in contact with the top surface of the oxide semiconductor layer, the first conductive layer comprising any one of titanium, molybdenum, and tungsten; and
a second conductive layer over the first conductive layer, the second conductive layer comprising copper,
wherein the signal line comprises a first region comprising a convex shape and a second region comprising a convex shape,
wherein the signal line and the first scan line intersect in the first region,
wherein the signal line and the second scan line intersect in the second region,
wherein the signal line is substantially entirely flat in the region between the first region and the second region,
wherein the signal line and the oxide semiconductor layer overlap each other in the first region,
wherein the first conductive layer comprises a region in contact with the top surface of the oxide semiconductor layer in the first region, and
wherein the signal line comprises a region not overlapping with the oxide semiconductor layer, in the region between the first region and the second region.
3. A display device comprising:
a first pixel electrically connected to a signal line and a first scan line, wherein the first pixel comprises a first transistor and a pixel electrode electrically connected to the first transistor; and
a second pixel adjacent to the first pixel, the second pixel electrically connected to the signal line and a second scan line,
wherein no conductive layer is provided under the signal line in a region between the first scan line and the second scan line,
wherein the first transistor comprises:
a gate layer comprising copper;
a first insulating layer over the gate layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen; and
an oxide semiconductor layer over and in contact with a top surface of the second insulating layer, the oxide semiconductor layer comprising indium, gallium, and zinc,
wherein a third insulating layer is positioned over and in contact with a top surface of the oxide semiconductor layer, the third insulating layer comprising silicon and oxygen,
wherein the oxide semiconductor layer comprises a channel formation region of the first transistor,
wherein the signal line comprises:
a first conductive layer comprising any one of titanium, molybdenum, and tungsten; and
a second conductive layer over the first conductive layer, the second conductive layer comprising copper,
wherein the signal line comprises a first region comprising a convex shape and a second region comprising a convex shape,
wherein the signal line and the first scan line intersect in the first region,
wherein the signal line and the second scan line intersect in the second region,
wherein the signal line is substantially entirely flat in the region between the first region and the second region,
wherein the signal line and the oxide semiconductor layer overlap each other in the first region,
wherein the first conductive layer comprises a region in contact with the top surface of the oxide semiconductor layer in the first region,
wherein the signal line comprises a region not overlapping with the oxide semiconductor layer, in the region between the first region and the second region, and
wherein the signal line and the pixel electrode do not overlap each other in the region between the first region and the second region.
4. A display device comprising:
a first pixel electrically connected to a signal line and a first scan line, wherein the first pixel comprises a first transistor and a pixel electrode electrically connected to the first transistor; and
a second pixel adjacent to the first pixel, the second pixel electrically connected to the signal line and a second scan line,
wherein no conductive layer is provided under the signal line in a region between the first scan line and the second scan line,
wherein the first transistor comprises:
a gate layer comprising copper;
a first insulating layer over the gate layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen; and
an oxide semiconductor layer over and in contact with a top surface of the second insulating layer, the oxide semiconductor layer comprising indium, gallium, and zinc,
wherein a third insulating layer is positioned over and in contact with a top surface of the oxide semiconductor layer, the third insulating layer comprising silicon and oxygen,
wherein the oxide semiconductor layer comprises a channel formation region of the first transistor,
wherein the signal line comprises:
a first conductive layer comprising a region in contact with the top surface of the oxide semiconductor layer, the first conductive layer comprising any one of titanium, molybdenum, and tungsten; and
a second conductive layer over the first conductive layer, the second conductive layer comprising copper,
wherein the signal line comprises a first region comprising a convex shape and a second region comprising a convex shape,
wherein the signal line and the first scan line intersect in the first region,
wherein the signal line and the second scan line intersect in the second region,
wherein the signal line is substantially entirely flat in the region between the first region and the second region,
wherein the signal line and the oxide semiconductor layer overlap each other in the first region,
wherein the first conductive layer comprises a region in contact with the top surface of the oxide semiconductor layer in the first region, and
wherein the signal line comprises a region not overlapping with the oxide semiconductor layer, in the region between the first region and the second region, and
wherein the signal line and the pixel electrode do not overlap each other in the region between the first region and the second region.