IP Library › Granted Patent US 12,519,248
Granted Patent B2
US 12,519,248 · App. 18/122,964 · Granted Jan 6, 2026

Antenna structure and electronic device comprising same

Inventors: Seungho Choi (Suwon-si, KR); Yoongeon Kim (Suwon-si, KR); Seungtae Ko (Suwon-si, KR); Junsig Kum (Suwon-si, KR); Jungmin Park (Suwon-si, KR); Bumhee Lee (Suwon-si, KR); Youngju Lee (Suwon-si, KR); Jongmin Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01Q21/065H01Q1/246H01Q1/48H04B7/0413
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Quick Facts
Patent No.
US 12,519,248
App. No.
18/122,964
Granted
Jan 6, 2026
Kind
B2
Abstract

The present disclosure relates to a 5 th generation (5G) or pre-5G communication system for supporting higher data transmission rates than 4 th generation (4G) communication systems such as Long-Term Evolution (LTE). According to one or more embodiments, an antenna includes: a first metal patch; a second metal patch; a feeding circuit; and a substrate. The first metal patch and the second metal patch are arranged on the substrate. The feeding circuit is coupled to the substrate and is spaced apart from the first metal patch.

Claims (26)

1 . An antenna in a wireless communication system, the antenna comprising:

a first metal patch including an opening;

a second metal patch;

a feeding line; and

a substrate including a support structure including a first support portion for the second metal patch, a plurality of second support portions for the first metal patch, and a third support portion disposed between the plurality of second support portions,

wherein the first support portion is coupled with the second metal patch via the opening of the first metal patch,

wherein the plurality of second support portions are coupled with the first metal patch, and

wherein the feeding line is coupled with the third support portion disposed between the plurality of second support portions such that the feeding line is spaced apart from the first metal patch.

2 . The antenna of claim 1 , wherein the first support portion is disposed at a center of the substrate including the support structure,

wherein the plurality of second support portions are spaced apart from the first support portion,

wherein the third support portion is disposed to extend from the first support portion, and

wherein the second metal patch is coupled to the first support portion and spaced apart from the first metal patch.

3 . The antenna of claim 1 , wherein the second metal patch is coupled to the first support portion on at least one point of the second metal patch, and

wherein the first metal patch is coupled to the plurality of second support portions on at least one point of the first metal patch.

4 . The antenna of claim 3 , wherein the first metal patch is coupled to the first support portion on an edge of the first metal patch.

5 . The antenna of claim 1 , wherein the second metal patch is coupled to the first support portion at a center of the second metal patch.

6 . The antenna of claim 1 , wherein the substrate including the support structure is formed of a dielectric having a permittivity.

7 . The antenna of claim 1 , wherein the feeding line includes a first feeding line and a second feeding line, and

wherein a first phase of a first signal of the first feeding line is different from a second phase of a second signal of the second feeding line by 90°.

8 . The antenna of claim 1 , further comprising:

a ground area disposed adjacent to a surface of the substrate including the support structure.

9 . The antenna of claim 1 , wherein the substrate comprises a ground area,

wherein a first capacitor is formed by the first metal patch and the second metal patch,

wherein a second capacitor is formed by the first metal patch and the ground area, and

wherein a third capacitor is formed by the second metal patch and the ground area.

10 . The antenna of claim 9 , wherein, by feeding of the feeding line, a first resonance frequency is formed along a first current path via the first capacitor, the second capacitor, and the third capacitor, and a second resonance frequency is formed along a second current path via the first capacitor and the second capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2023
From: CHOI, SEUNGHO; KIM, YOONGEON; KO, SEUNGTAE; KUM, JUNSIG; PARK, JUNGMIN; LEE, BUMHEE; LEE, YOUNGJU; LEE, JONGMIN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 063019/0677 →
Priority Claims (1)
KR 10-2020-0120969 · Sep 18, 2020 · national
Continuity (2)
Continuation PCTKR2021012824 · Sep 17, 2021
Related Publication 20230231321A1 · Jul 20, 2023
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