Method of printed circuit board dielectric molding and electrolytic metallization
A method of manufacturing a printed circuit board (PCB) includes forming a tridimensional (3D) dielectric substrate on a fiber-reinforced polymer with opposite sides; forming each side with channels and pockets by molding dielectric laminate, and the channels and pockets define a layout for conductive traces and pads of the PCB; forming the channels and pockets in a same side of the 3D dielectric substrate at a uniform depth; forming side walls of the channels and pockets of the 3D dielectric substrate with a draft angle in a range of greater than 0 degrees to about 5 degrees; depositing by electrolytic metallization the conductive traces and pads into the channels and pockets of the 3D dielectric substrate; and the outer surface of those conductive traces and pads are flush with the sides of the 3D dielectric substrate.
1. A method of manufacturing a printed circuit board (PCB), the method comprising:
forming a tridimensional (3D) dielectric substrate comprising fiber-reinforced polymer that is mechanically rigid and has opposite sides;
forming each side with channels and pockets by molding the 3D dielectric substrate, and the channels and pockets define a layout for conductive traces and pads, respectively, of the PCB;
forming the channels and pockets in a same side of the 3D dielectric substrate at a uniform depth that is equal to or greater than 140 μm;
forming side walls of the channels and pockets of the 3D dielectric substrate with a draft angle in a range of greater than 0 degrees to about 5 degrees;
depositing by electrolytic metallization a material comprising copper to form the conductive traces and pads in the channels and pockets, respectively, of the 3D dielectric substrate; and
making outer surfaces of the conductive traces and pads flush with respective sides of the 3D dielectric substrate.
2. The method of claim 1 , wherein the channels and pockets of a first side of the sides comprise a first depth, and the channels and pockets of a second side of the sides comprise a second depth.
3. The method of claim 2 , wherein the first and second depths are the same or within 25 μm of each other.
4. The method of claim 3 , wherein the sides of the 3D dielectric substrate are formed with a same layout.
5. The method of claim 3 , wherein each side of the 3D dielectric substrate is formed with a different layout.
6. The method of claim 2 , wherein the first depth differs from the second depth.
7. The method of claim 6 , wherein the sides of the 3D dielectric substrate are formed with a same layout.
8. The method of claim 1 , wherein each side of the 3D dielectric substrate is formed with a different layout.
9. A method of manufacturing a printed circuit board (PCB) stator for an axial field rotary energy device, the method comprising:
forming a PCB panel as a tridimensional (3D) dielectric substrate comprising fiber-reinforced polymer with opposite sides;
forming each side with channels and pockets by molding the 3D dielectric substrate, and the channels and pockets define a layout for conductive traces and pads, respectively, of the PCB panel;
forming the channels and pockets in a same side of the 3D dielectric substrate at a uniform depth that is equal to or greater than 140 μm;
forming side walls of the channels and pockets of the 3D dielectric substrate at a draft angle in a range of greater than 0 degrees to about 5 degrees;
depositing by electrolytic metallization and forming the conductive traces and pads into the channels and pockets, respectively, of the 3D dielectric substrate; and
making outer surfaces of the conductive traces and pads flush with respective sides of the 3D dielectric substrate.
10. The method of claim 9 , wherein the channels and pockets of a first side of the sides of the 3D dielectric substrate are formed at a first depth, and the channels and pockets of a second side of the sides of the 3D dielectric substrate are formed at a second depth.
11. The method of claim 10 , wherein the first and second depths are the same or within 25 μm of each other.
12. The method of claim 10 , wherein the first depth differs from the second depth.