Integrated circuit dynamic capacitance matching method, simulation equipment, and storage medium

1 . Method for dynamic capacitance matching of integrated circuits, comprising:

S 1 : obtaining data of standard cell circuit netlist and standard cell specification document;

S 2 : obtaining a range of load capacitance values;

For each standard cell, executing steps S 3 and S 4 :

S 3 : based on the data of the standard cell circuit netlist and the standard cell specification document, constructing a standard cell driver capacitance load model;

S 4 : simulating the standard cell driver capacitance load model based on the range of load capacitance values to obtain output voltage, output current, time, and load capacitance value data, forming a pre-simulation data set for the standard cell;

S 5 : obtaining pre-simulation data set for each standard cell to form a standard cell database;

S 6 : obtaining netlist data of circuit to be analyzed;

S 7 : based on the netlist data of the circuit to be analyzed, dividing the netlist data of the circuit into multiple unit networks based on a single standard cell and corresponding connected load circuit as a reference;

S 8 : identifying the standard cell driver capacitance load model in a unit network and obtaining the corresponding pre-simulation data set from the standard cell database based on the standard cell driver capacitance load model;

S 9 : simulating the unit network based on the pre-simulation data set to obtain output voltage curve data and/or output current curve data of the unit network.

2 . The method for dynamic capacitance matching of integrated circuits according to claim 1 , wherein step S 9 comprises:

S 901 : obtaining the voltage output range of the standard cell based on the pre-simulation data set;

S 902 : obtaining the maximum circuit capacitance value from the circuit netlist data to be analyzed;

S 903 : uniformly selecting a set of simulation voltage values from the voltage output range based on a predetermined quantity;

S 904 : obtaining N simulation voltage values in ascending order based on the set of simulation voltage values;

S 905 : setting a test capacitance value based on the maximum circuit capacitance value;

S 906 : obtaining the time value and output current value corresponding to the Nth simulation voltage value and the test capacitance value from the pre-simulation data set;

S 907 : constructing a second piecewise function based on the Nth simulation voltage value and the time value when N>2, and based on the first and second simulation voltage values when N=2;

S 908 : simulating the load circuit in the unit network based on the second piecewise function as the input voltage function to obtain the simulated current value corresponding to the Nth simulation voltage value;

S 909 : comparing the output current value with the simulated current value; if the difference between the output current value and the simulated current value is less than a threshold value, recording the simulation voltage value, output current value, and time value as simulation point data; if the difference between the output current value and the simulated current value is greater than the threshold value, adjusting the test capacitance value and repeating steps S 906 , S 907 , S 908 , and S 909 ;

S 910 : incrementing N by 1 and using the second piecewise function as the first piecewise function, and repeating steps S 904 , S 905 , S 906 , S 907 , S 908 , S 909 , and S 910 until N+1 is greater than the predetermined quantity;

S 911 : fitting all simulation point data to generate output voltage curve data and output current curve data.

3 . The integrated circuit dynamic capacitance matching method according to claim 2 , wherein the S 908 step includes:

S 9081 : obtaining a matrix file of the load circuit in the unit network through nodal analysis algorithm;

S 9082 : obtaining the driving-point admittance function by solving the matrix file through a solving algorithm;

S 9083 : obtaining the current output function based on the driving-point admittance function and using the second piecewise function as the input voltage function;

S 9084 : obtaining the simulated current value corresponding to the Nth simulated voltage value by substituting the time value corresponding to the Nth simulated voltage value into the current output function.

4 . The integrated circuit dynamic capacitance matching method according to claim 2 , wherein:

in the step S 909 , if the difference between the output current value and the simulated current value is less than a threshold value, the method further includes: using the test capacitance value as the equivalent capacitance value, recording the equivalent capacitance value and time value as the equivalent capacitance data;

after the step S 910 , the method further includes: fitting all the equivalent capacitance data to generate equivalent capacitance variation curve data.

5 . According to claim 2 of the integrated circuit dynamic capacitor matching method, the feature of the method is that in step S 909 , the adjustment of the test capacitance value includes:

comparing the simulated current value with the output current value, determining the test capacitance value by using the binary search method combined with the circuit capacitance maximum value and historical test capacitance values based on the comparison result;

when the simulated current value is less than the output current value, increasing the test capacitance value based on the binary search method;

when the simulated current value is greater than the output current value, decreasing the test capacitance value based on the binary search method.

6 . The dynamic capacitance matching method for integrated circuits according to claim 1 , characterized in that in step S 9 , parallel simulation is performed on each unit network to obtain output voltage curve data and output current curve data for each unit network.

7 . A simulation device comprising a processor and a memory, wherein the memory stores program data, and the processor executes the program data to implement:

S 1 : obtain data of standard cell circuit netlist and standard cell specification document;

S 2 : obtain a range of load capacitance values;

For each standard cell, executing steps S 3 and S 4 :

S 3 : based on the data of the standard cell circuit netlist and the standard cell specification document, construct a standard cell driver capacitance load model;

S 4 : simulate the standard cell driver capacitance load model based on the range of load capacitance values to obtain output voltage, output current, time, and load capacitance value data, forming a pre-simulation data set for the standard cell;

S 5 : obtain pre-simulation data set for each standard cell to form a standard cell database;

S 6 : obtain netlist data of circuit to be analyzed;

S 7 : based on the netlist data of the circuit to be analyzed, divide the netlist data of the circuit into multiple unit networks based on a single standard cell and corresponding connected load circuit as a reference;

S 8 : identify the standard cell driver capacitance load model in a unit network and obtaining the corresponding pre-simulation data set from the standard cell database based on the standard cell driver capacitance load model;

S 9 : simulate the unit network based on the pre-simulation data set to obtain output voltage curve data and/or output current curve data of the unit network.

8 . A non-transitory storage medium storing computer-readable program data, characterized in that the computer-readable program data, when executed by a processor, implements:

S 1 : obtain data of standard cell circuit netlist and standard cell specification document;

S 2 : obtain a range of load capacitance values;

For each standard cell, executing steps S 3 and S 4 :

S 3 : based on the data of the standard cell circuit netlist and the standard cell specification document, construct a standard cell driver capacitance load model;

S 4 : simulate the standard cell driver capacitance load model based on the range of load capacitance values to obtain output voltage, output current, time, and load capacitance value data, forming a pre-simulation data set for the standard cell;

S 5 : obtain pre-simulation data set for each standard cell to form a standard cell database;

S 6 : obtain netlist data of circuit to be analyzed;

S 7 : based on the netlist data of the circuit to be analyzed, divide the netlist data of the circuit into multiple unit networks based on a single standard cell and corresponding connected load circuit as a reference;

S 8 : identify the standard cell driver capacitance load model in a unit network and obtaining the corresponding pre-simulation data set from the standard cell database based on the standard cell driver capacitance load model;

S 9 : simulate the unit network based on the pre-simulation data set to obtain output voltage curve data and/or output current curve data of the unit network.