Electronic device and fabrication method thereof
An electronic device includes a substrate, a transistor disposed on the substrate, an electrode disposed on the substrate and coupled to the transistor, and a plurality of electronic units disposed on the substrate and coupled to the electrode. The transistor is used to align the plurality of electronic units when the plurality of electronic units are in an alignment mode, and the transistor is turned off when the plurality of electronic units are in an operating mode.
1 . An electronic device comprising:
a substrate;
a first transistor disposed on the substrate;
a second transistor disposed on the substrate;
a first electrode disposed on the substrate and coupled to the first transistor;
a second electrode disposed on the substrate and coupled to the second transistor; and
a plurality of first electronic units disposed on the substrate and coupled to the first electrode and the second electrode;
wherein the first transistor is used to align the plurality of first electronic units when the plurality of first electronic units are in an alignment mode, and the first transistor is turned off and the second transistor is turned on to drive the plurality of first electronic units when the plurality of first electronic units are in an operating mode.
2 . The electronic device of claim 1 wherein the first transistor comprises an oxide semiconductor.
3 . The electronic device of claim 1 further comprising a second transistor coupled to the first transistor in cascode, the second transistor comprising a control terminal coupled to a control terminal of the first transistor.
4 . The electronic device of claim 1 , wherein the plurality of first electronic units comprise a plurality of light emitting units.
5 . The electronic device of claim 4 , wherein the plurality of light emitting units are rod-shaped light emitting units.
6 . A method of fabricating an electronic device comprising:
providing a substrate;
forming a first transistor on the substrate;
forming a first electrode pair on the substrate, wherein a first electrode of the first electrode pair is coupled to the first transistor;
disposing a plurality of first electronic units on the substrate;
aligning the plurality of first electronic units by applying a first voltage to the first electrode and applying a second voltage to a second electrode of the first electrode pair through the first transistor; and
insulating the first electrode from the first transistor after aligning the plurality of first electronic units.
7 . The method of claim 6 further comprising applying the first voltage to the first transistor before disposing the plurality of first electronic units on the substrate.
8 . The method of claim 6 further comprising:
forming a second transistor on the substrate;
forming a second electrode pair, wherein a first electrode of the second electrode pair is coupled to the second transistor;
disposing a plurality of second electronic units on the substrate; and
after aligning the plurality of first electronic units, aligning the plurality of second electronic units by applying a third voltage to the first electrode of the second electrode pair through the second transistor and applying a fourth voltage to a second electrode of the second electrode pair.
9 . The method of claim 8 further comprising:
applying a fifth voltage to the first electrode of the first electrode pair through the first transistor and applying the fifth voltage to the first electrode of the second electrode pair through the second transistor; and
forming an insulation layer on the plurality of first electronic units and the plurality of second electronic units.