Minimizing shorting between FinFET epitaxial regions
The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.
1. A structure comprising:
a first gate separated from a second gate by a dielectric region;
a first semiconductor fin associated with the first gate;
a second semiconductor fin associated with the second gate; and
a continuous spacer surrounding the first gate, the second gate, and the dielectric region, wherein:
the continuous spacer directly contacts vertical sidewalls of each of the first gate, the second gate, and the dielectric region;
the first gate and the second gate are aligned along a first direction and extend from opposite sides of the dielectric region;
widths of the first and second gates in a second direction are less than a width of the dielectric region in the second direction; and
the second direction is orthogonal to the first direction.
2. The structure of claim 1 , wherein a top surface of the dielectric region, a top surface of the first gate and a top surface of the second gate are substantially co-planar.
3. The structure of claim 1 , wherein the dielectric region comprises an oxide, a nitride, or an oxynitride.
4. The structure of claim 1 , wherein at least one of the first gate or the second gate comprises copper, tungsten, gold, aluminum, ruthenium, titanium, platinum, or alloys thereof.
5. The structure of claim 1 , wherein at least one of the first gate or the second gate comprises polycrystalline silicon.
6. The structure of claim 1 , further comprising:
a first epitaxial region on the first semiconductor fin associated with the first gate; and
a second epitaxial region on the second semiconductor fin associated with the second gate, wherein the dielectric region and the continuous spacer isolate a portion of the first epitaxial region from a portion of the second epitaxial region.
7. The structure of claim 1 , wherein the first semiconductor fin is part of a first fin group and the second semiconductor fin is part of a second fin group.
8. The structure of claim 1 , wherein the continuous spacer comprises oxide, nitride, or oxynitride.
9. The structure of claim 1 further comprising a substrate below the first semiconductor fin, wherein:
the substrate comprises silicon; and
the first semiconductor fin comprises silicon germanium.
10. A structure comprising:
a first metal gate perpendicular to and covering a portion of a first set of fins;
a second metal gate perpendicular to and covering a portion of a second set of fins;
a dielectric region separating the first metal gate from the second metal gate, wherein the dielectric region separates a first source/drain region on the first set of fins and a second source/drain region on the second set of fins; and
a continuous spacer surrounding the first metal gate, the second metal gate, and the dielectric region, wherein:
the continuous spacer directly contacts vertical sidewalls of each of the first metal gate, the second metal gate, and the dielectric region;
the first metal gate and the second metal gate are aligned along a first direction and extend from opposites sides of the dielectric region;
widths of the first and second metal gates in a second direction are less than a width of the dielectric region in the second direction; and
the second direction is orthogonal to the first direction.
11. The structure of claim 10 , wherein a top surface of the dielectric region, a top surface of the first metal gate and a top surface of the second metal gate are substantially co-planar.
12. The structure of claim 10 , wherein the dielectric region comprises an oxide, a nitride, or an oxynitride.
13. The structure of claim 10 , wherein at least one of the first metal gate or the second metal gate comprises copper, tungsten, gold, aluminum, ruthenium, titanium, platinum, or alloys thereof.
14. The structure of claim 10 , wherein:
the first source/drain region comprises a first epitaxial region on a first semiconductor fin associated with the first set of fins; and
the second source/drain region comprises a second epitaxial region on a second semiconductor fin associated with the second set of fins, wherein the dielectric region and the continuous spacer isolate a portion of the first epitaxial region from a portion of the second epitaxial region.
15. The structure of claim 10 , wherein the continuous spacer comprises oxide, nitride, or oxynitride.
16. The structure of claim 10 further comprising a substrate below the first set of fins, wherein:
the substrate comprises silicon; and
the first set of fins comprise silicon germanium.