Display device and electronic device
A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
1. A semiconductor device comprising a transistor and a capacitor, the semiconductor device comprising:
an oxide semiconductor layer;
a first conductive layer and a second conductive layer, each having a region in contact with a bottom surface of the oxide semiconductor layer;
a first insulating film over the oxide semiconductor layer;
a third conductive layer over the first insulating film and overlapping the oxide semiconductor layer;
a second insulating layer over the third conductive layer;
a fourth conductive layer over the second insulating layer and in electrical contact with the second conductive layer;
a fifth conductive layer under the fourth conductive layer and overlapping the fourth conductive layer;
a sixth conductive layer under the fifth conductive layer and overlapping the fifth conductive layer;
a third insulating film under the oxide semiconductor layer, the first conductive layer, the second conductive layer and the fifth conductive layer;
a seventh conductive layer under the third insulating film, overlapping the oxide semiconductor layer, and in electrical contact with the first conductive layer;
wherein each of the oxide semiconductor layer, the first conductive layer, the second conductive layer and the fifth conductive layer is in contact with a top surface of the third insulating film,
wherein the third insulating film is in contact with a top surface of the sixth conductive layer and a top surface of the seventh conductive layer, and
wherein the sixth conductive layer has a region overlapping the fourth conductive layer and the fifth conductive layer, and has a region overlapping the fourth conductive layer without overlapping the fifth conductive layer.
2. The semiconductor device according to claim 1 , wherein the first conductive layer, the second conductive layer and the fifth conductive layer are of a same material.
3. The semiconductor device according to claim 1 , wherein the first conductive layer and the second conductive layer are a source electrode and a drain electrode of the transistor.
4. The semiconductor device according to claim 1 , wherein the third conductive layer is a gate electrode of the transistor.
5. The semiconductor device according to claim 1 , wherein the fifth conductive layer is one electrode of the capacitor, and the sixth conductive layer is the other electrode of the capacitor.
6. The semiconductor device according to claim 1 , wherein the sixth conductive layer and the seventh conductive layer are of a same material.
7. A semiconductor device comprising a transistor and a capacitor, the semiconductor device comprising:
an oxide semiconductor layer;
a first conductive layer and a second conductive layer, each having a region in contact with a bottom surface of the oxide semiconductor layer;
a first insulating film over the oxide semiconductor layer;
a third conductive layer over the first insulating film and overlapping the oxide semiconductor layer;
a second insulating layer over the third conductive layer;
a fourth conductive layer over the second insulating layer and in electrical contact with the second conductive layer;
a fifth conductive layer under the fourth conductive layer and overlapping the fourth conductive layer;
a sixth conductive layer under the fifth conductive layer and overlapping the fifth conductive layer;
a third insulating film under the oxide semiconductor layer, the first conductive layer, the second conductive layer and the fifth conductive layer;
a seventh conductive layer under the third insulating film, overlapping the oxide semiconductor layer, and in electrical contact with the first conductive layer;
wherein each of the oxide semiconductor layer, the first conductive layer, the second conductive layer and the fifth conductive layer is in contact with a top surface of the third insulating film,
wherein the third insulating film is in contact with a top surface of the sixth conductive layer and a top surface of the seventh conductive layer,
wherein the second conductive layer is in electrical contact with the sixth conductive layer through the fourth conductive layer, and
wherein the sixth conductive layer has a region overlapping the fourth conductive layer and the fifth conductive layer, and has a region overlapping the fourth conductive layer without overlapping the fifth conductive layer.
8. The semiconductor device according to claim 7 , wherein the first conductive layer, the second conductive layer and the fifth conductive layer are of a same material.
9. The semiconductor device according to claim 7 , wherein the first conductive layer and the second conductive layer are a source electrode and a drain electrode of the transistor.
10. The semiconductor device according to claim 7 , wherein the third conductive layer is a gate electrode of the transistor.
11. The semiconductor device according to claim 7 , wherein the fifth conductive layer is one electrode of the capacitor, and the sixth conductive layer is the other electrode of the capacitor.
12. The semiconductor device according to claim 7 , wherein the sixth conductive layer and the seventh conductive layer are of a same material.