Light-emitting device
View Patent ↗To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.
1. A light emitting device comprising a pixel, the pixel comprising:
a first transistor;
a second transistor:
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a first capacitor; and
a light emitting element,
wherein,
one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the sixth transistor,
the other of the source and the drain of the first transistor is electrically connected to a first wiring,
a first gate of the first transistor is electrically connected to one of a source and a drain of the second transistor and to an electrode of the first capacitor,
a second gate of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
a gate of the second transistor is electrically connected a second wiring,
one of a source and a drain of the third transistor is electrically connected to the first gate of the first transistor,
a gate of the third transistor is electrically connected to a third wiring,
one of a source and a drain of the fourth transistor is electrically connected to a fourth wiring,
one of a source and a drain of the fifth transistor is electrically connected to the light emitting element,
the other of the source and the drain of the fifth transistor is electrically connected to a fifth wiring,
a gate of the sixth transistor is electrically connected to a sixth wiring,
the second transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region,
the second wiring is different from the third wiring,
the third wiring is different from the sixth wiring,
the third wiring is configured to be supplied with a potential of a high level, and
the sixth wiring is configured to be supplied with a potential of a low level.
2. The light emitting device according to claim 1 ,
wherein the pixel further comprises a second capacitor,
wherein an electrode of the second capacitor is electrically connected to the second gate of the first transistor, and
wherein each of the first transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region.
3. The light emitting device according to claim 1 ,
wherein the second wiring, the third wiring and the six wiring are configured to be supplied with potentials, separately.
4. A light emitting device comprising a pixel, the pixel comprising:
a first transistor;
a second transistor:
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a first capacitor; and
a light emitting element,
wherein,
one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the sixth transistor,
the other of the source and the drain of the first transistor is electrically connected to a first wiring,
a first gate of the first transistor is electrically connected to one of a source and a drain of the second transistor and to an electrode of the first capacitor,
a second gate of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
a gate of the second transistor is electrically connected a second wiring,
one of a source and a drain of the third transistor is electrically connected to the first gate of the first transistor,
a gate of the third transistor is electrically connected to a third wiring,
one of a source and a drain of the fourth transistor is electrically connected to a fourth wiring,
one of a source and a drain of the fifth transistor is electrically connected to the light emitting element,
the other of the source and the drain of the fifth transistor is electrically connected to a fifth wiring,
a gate of the sixth transistor is electrically connected to a sixth wiring,
the second transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region,
a gate of the fourth transistor and a gate of the fifth transistor are electrically connected to different wirings, respectively,
the third wiring is different from the sixth wiring,
the third wiring is configured to be supplied with a potential of a high level, and
the sixth wiring is configured to be supplied with a potential of a low level.
5. The light emitting device according to claim 4 ,
wherein the pixel further comprises a second capacitor,
wherein an electrode of the second capacitor is electrically connected to the second gate of the first transistor, and
wherein each of the first transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region.
6. The light emitting device according to claim 4 ,
wherein the second wiring, the third wiring and the six wiring are configured to be supplied with potentials, separately.
7. A light emitting device comprising a pixel, the pixel comprising:
a first transistor;
a second transistor:
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a first capacitor; and
a light emitting element,
wherein,
one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the sixth transistor,
the other of the source and the drain of the first transistor is electrically connected to a first wiring,
a first gate of the first transistor is electrically connected to one of a source and a drain of the second transistor and to an electrode of the first capacitor,
a second gate of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
a gate of the second transistor is electrically connected a second wiring,
one of a source and a drain of the third transistor is electrically connected to the first gate of the first transistor,
a gate of the third transistor is electrically connected to a third wiring,
one of a source and a drain of the fourth transistor is electrically connected to a fourth wiring,
one of a source and a drain of the fifth transistor is electrically connected to the light emitting element,
the other of the source and the drain of the fifth transistor is electrically connected to a fifth wiring,
a gate of the sixth transistor is electrically connected to a sixth wiring,
the second transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region,
a gate of the fourth transistor and a gate of the fifth transistor are electrically connected to different wirings, respectively,
the second wiring is different from the third wiring,
the third wiring is different from the sixth wiring,
the third wiring is configured to be supplied with a potential of a high level, and
the sixth wiring is configured to be supplied with a potential of a low level.
8. The light emitting device according to claim 7 ,
wherein the pixel further comprises a second capacitor,
wherein an electrode of the second capacitor is electrically connected to the second gate of the first transistor, and
wherein each of the first transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor comprises an oxide semiconductor film, the oxide semiconductor film comprising a channel formation region.
9. The light emitting device according to claim 7 ,
wherein the second wiring, the third wiring and the six wiring are configured to be supplied with potentials, separately.