Structures and methods for use in photolithography
Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.
1. A method for forming a structure comprising:
providing a substrate comprising a carbon-containing layer having a first stress to a reaction chamber;
providing a precursor in the reaction chamber to deposit a stress management layer on the carbon-containing layer by a cyclic deposition process;
wherein the stress management layer has a stress different from the first stress, and
wherein the stress management layer compensates for at least some of the first stress in the carbon-containing layer.
2. The method according to claim 1 further comprising providing a plasma in the reaction chamber.
3. The method according to claim 1 wherein the precursor comprises carbon and hydrogen.
4. The method according to claim 3 wherein a ratio of the carbon concentration and a hydrogen concentration in the stress management layer is at least 0.8, when the carbon concentration and the hydrogen concentration are expressed on a per mol basis.
5. The method according to claim 3 wherein the precursor further comprises a halogen.
6. The method according to claim 3 wherein the precursor further comprises oxygen and/or nitrogen.
7. The method according claim 3 wherein the precursor further comprises phosphorous and/or boron.
8. The method according to claim 1 wherein the stress management layer is deposited using a reactant selected from the list consisting of O 2 , CO 2 , N 2 O, CO, a mixture of N 2 and a noble gas, a mixture of N 2 and H 2 , and a mixture of NH 3 and a noble gas.
9. The method according to claim 8 wherein the precursor comprises triethylboron and the reactant comprises Ar.
10. The method according to claim 8 wherein the stress management layer is deposited using a cyclical deposition process.
11. The method according to claim 10 wherein the cyclical deposition process comprises exposing the substrate to a plasma.
12. The method according to claim 1 wherein the stress management layer does not comprise silicon, titanium, or zinc.
13. The method according to claim 1 wherein the stress management layer consists of C, H, O, and N.
14. The method according to claim 1 further comprising a step of depositing an underlayer on the stress management layer.
15. The method according to claim 14 wherein the underlayer has a thickness of less than 5 nm.
16. The method according to claim 14 wherein the underlayer has a surface energy having a polar part and a dispersive part, wherein polar part of the surface energy is from at least 3 mN/m to at most 13 mN/m.
17. A method of forming a structure, the method comprising the steps of:
providing a substrate;
forming a carbon-containing layer overlying a surface of the substrate, the carbon-containing layer having a first stress;
forming a stress management layer overlying a surface of the carbon-containing layer, the stress management layer having a second stress;
forming an underlayer overlying a surface of the stress management layer; and
forming a photoresist layer overlying the underlayer,
wherein the stress management layer is formed by a cyclic deposition process.
18. The method according to claim 17 wherein the underlayer has a thickness of less than 5 nm.
19. The method according to claim 17 wherein the underlayer has a surface energy having a polar part and a dispersive part, wherein polar part of the surface energy is from at least 3 mN/m to at most 13 mN/m.
20. The method according to claim 17 wherein the stress management layer consists of C, H, O, and N.