Display device
An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.
1. An electronic device having a display region and a peripheral region adjacent to the display region, comprising:
a first substrate;
a silicon semiconductor layer disposed on the first substrate;
a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate;
a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and
a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer,
wherein the first oxide semiconductor layer and the second oxide semiconductor layer are disposed in the display region, the silicon semiconductor layer is disposed in the peripheral region, and the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.
2. The electronic device of claim 1 , wherein the second conductive component is directly connected to the at least one of the first oxide semiconductor layer and the second oxide semiconductor layer.
3. The electronic device of claim 1 , wherein the first conductive component is at least partially overlapped with the first oxide semiconductor layer.
4. The electronic device of claim 1 , wherein the at least one of the first oxide semiconductor layer and the second oxide semiconductor layer is disposed on the silicon semiconductor layer.
5. The electronic device of claim 1 , further comprising a first gate electrode disposed on the first substrate, wherein the first oxide semiconductor layer is disposed on the first gate electrode.
6. The electronic device of claim 5 , further comprising a gate insulating layer disposed between the first gate electrode and the first oxide semiconductor layer, wherein a maximum atomic percentage of oxygen in the gate insulating layer is greater than a maximum atomic percentage of oxygen in the first oxide semiconductor layer.
7. The electronic device of claim 6 , wherein the gate insulating layer comprises silicon oxide.
8. The electronic device of claim 1 , further comprising a second gate electrode disposed on the first substrate, wherein the second gate electrode is disposed on the silicon semiconductor layer.
9. The electronic device of claim 1 , further comprising a passivation layer disposed on the at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the passivation layer comprises silicon oxide.
10. The electronic device of claim 1 , wherein the at least one of the first oxide semiconductor layer and the second oxide semiconductor layer is an indium gallium zinc oxide (IGZO) layer.
11. The electronic device of claim 1 , wherein the silicon semiconductor layer is a low-temperature polycrystalline silicon semiconductor layer.
12. The electronic device of claim 1 , further comprising a display medium layer electrically connected to the first oxide semiconductor layer, wherein the display medium layer is an organic light-emitting diode unit.
13. The electronic device of claim 1 , wherein the first substrate comprises a flexible substrate.
14. The display device of claim 1 , wherein a driver circuit is disposed in the peripheral region and comprises the silicon semiconductor layer.