Setting levels for a programming operation in a neural network array
In one example, a method comprises determining a program resolution current value; and setting levels for a programming operation of a plurality of non-volatile memory cells in a neural network array such that a delta current between levels of each pair of adjacent cells in the plurality is a multiple of the program resolution current value.
1. A method comprising:
determining a program resolution current value; and
setting N current levels for a plurality of non-volatile memory cells in a neural network array, where the non-volatile memory cells respectively can be programmed to any of the N current levels, such that a delta current between adjacent current levels within the N current levels is a multiple of the program resolution current value;
wherein the delta current is at least a 1 sigma variation of one of the N current levels.
2. The method of claim 1 , wherein at least one of the N current levels is a multiple of an off cell leakage value.
3. The method of claim 1 , wherein the plurality of non-volatile memory cells are organized into logical cells, each logical cell comprising one or more coarse cells and one or more fine cells.
4. The method of claim 3 , wherein the non-volatile memory cells are split gate flash memory cells.
5. The method of claim 3 , wherein the non-volatile memory cells are stacked gate flash memory cells.
6. The method of claim 1 , wherein the non-volatile memory cells are split gate flash memory cells.
7. The method of claim 1 , wherein the non-volatile memory cells are stacked gate flash memory cells.
8. A method comprising:
determining a program resolution current value; and
setting N current levels for a plurality of non-volatile memory cells in a neural network array, where the non-volatile memory cells respectively can be programmed to any of the N current levels, such that a delta current between adjacent current levels within the N current levels is a multiple of the program resolution current value;
wherein the delta current is at least a 2 sigma variation of one of the N current levels.
9. A method comprising:
determining a program resolution current value; and
setting N current levels for a plurality of non-volatile memory cells in a neural network array, where the non-volatile memory cells respectively can be programmed to any of the N current levels, such that a delta current between adjacent current levels within the N current levels is a multiple of the program resolution current value;
wherein the delta current is at least a 3 sigma variation of one of the N current levels.