IP Library Granted Patent US 12,332,797
Granted Patent B2
US 12,332,797 · App. 18/140,410 · Granted Jun 17, 2025

Storage module supporting single serialized write interfacing scheme and operation method thereof

Inventors: Doohwan Oh (Suwon-si, KR); Wonjae Shin (Suwon-si, KR); Eunbyeol Ko (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G06F12/0842G06F12/0879G06F2212/272
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,332,797
App. No.
18/140,410
Granted
Jun 17, 2025
Kind
B2
Abstract

A method of operating a storage module, the method including setting a characteristic value based on information received from a host, the information including information related to a size of write data in units of cache lines, and successively receiving the write data in units of the cache lines based on a single write command received from the host.

Claims (46)

1. A method of operating a storage module, the method comprising:

setting a characteristic value based on information received from a host, the information including information related to a size of write data in units of a plurality of cache lines; and

successively receiving the write data in units of the plurality of cache lines based on a single write command received from the host,

wherein the single write command is implemented by a single bit of a write command received from the host.

2. The method of claim 1 , wherein successively receiving of the write data comprises alternately receiving data corresponding to different bank groups among a plurality of bank groups, based on an interval of a second time.

3. The method of claim 2 , wherein alternately receiving the data comprises, based on the single write command:

receiving data in units of the plurality of cache lines to be stored in a first bank group of the plurality of bank groups; and

after receiving the data, receiving data in units of the plurality of cache lines to be stored in a second bank group of the plurality of bank groups that is different from the first bank group at the interval of the second time.

4. The method of claim 3 , wherein a write operation with respect to the first bank group and a write operation with respect to the second bank group are each performed in one direction based on a column stride scheme.

5. The method of claim 1 , wherein alternately receiving the data comprises:

receiving data of a first size to be stored in a first bank group based on the single write command; and

successively receiving data of a second size less than the first size to be stored in a second bank group that is different from the first bank group at an interval of a second time, based on the single write command, and

wherein the first size is a same size as a size of the cache lines.

6. The method of claim 2 , wherein alternately receiving the data comprises:

receiving data of a first size to be stored in a first bank group based on the single write command; and

receiving data of a second size greater than the first size to be stored in a second bank group that is different from the first bank group at the interval of the second time, based on the single write command, and

wherein the second size is a same size as a size of the cache lines.

7. The method of claim 2 , wherein alternately receiving the data comprises:

receiving first data to be stored in a first bank group of the plurality of bank groups, based on the single write command; and

receiving second data to be stored in a second bank group of the plurality of bank groups that is different from the first bank group, at the interval of the second time, based on the single write command, and

wherein a size of the first data and a size of the second data are each less than a size of the cache lines.

8. The method of claim 1 , wherein successively receiving the write data comprises successively receiving data to be stored in a same bank group based on a first time.

9. The method of claim 1 , wherein the characteristic value includes a characteristic value related to a number of cache line unit data to be successively received.

10. The method of claim 9 , wherein the characteristic value includes a characteristic value related to whether data are to be stored in a same bank group of a plurality of bank groups or whether data are to be stored in different bank groups of the plurality of bank groups.

11. The method of claim 1 , wherein the information related to the size of the write data is transferred from the host through a mode register set (MRS) command or a mode register write (MRW) command, and

wherein, during an update delay time for setting the characteristic value, a non-setting command is not transmitted from the host.

12. The method of claim 1 , wherein the write command is a DDR write command, and the single bit is implemented using a bit of the DDR write command that is not defined in DDR.

13. A storage module comprising:

a memory device that includes a volatile memory; and

a memory controller configured to control the memory device, the memory controller including:

a control module configured to decode a setting command received from a host to identify first information on a size of write data, and to determine a number of cache line unit data to be successively received from the host based on the size of the write data; and

a register configured to store first information on the number of cache line unit data to be successively received,

wherein the memory device includes a plurality of bank groups,

wherein the control module is configured to decode the setting command to identify second information on a toggle mode that indicates whether the write data to be received is associated with different bank groups of the plurality of bank groups or a same bank group of the plurality of bank groups, and

wherein the register stores the second information.

14. The storage module of claim 13 , wherein the control module is configured to write the cache line unit data to the plurality of bank groups based on the toggle mode.

15. The storage module of claim 13 , wherein the control module is configured to output a control signal for performing the write operation on the memory device based on a single write command received from the host, and

wherein the control module generates the control signal based on the first information on the number of cache line unit data to be successively received and the second information on the toggle mode stored in the register.

16. The storage module of claim 15 , wherein, when the toggle mode is enabled, the control module receives data corresponding to different bank groups of the plurality of bank groups at a time interval, and the memory device alternately performs the write operation on the different bank groups based on the control signal.

17. The storage module of claim 16 , wherein the write operation for each of the different bank groups is performed depending on a column stride scheme.

18. The storage module of claim 15 , wherein, when the toggle mode is disabled, the control module receives data corresponding to a same bank group of the plurality of bank groups at a time interval, and the memory device successively performs the write operation on the same bank group based on the control signal.

19. A memory system comprising:

a host configured to determine a number of cache lines to be write-requested; and

a storage module configured to receive information related to the number of cache lines from the host and a toggle mode that indicates whether the number of cache lines is associated with different bank groups of a plurality of bank groups or a same bank group of the plurality of bank groups, identify a number of cache line unit data to be successively received and bank groups of the plurality of bank groups associated with the number of cache line unit data based on the information, and successively receive data in units of the cache line unit data based on a single write command.

20. The memory system of claim 19 , wherein the host further includes:

a system address map manager configured to generate address information associated with data to be stored in the storage module.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2023
From: OH, DOOHWAN; SHIN, WONJAE; KO, EUNBYEOL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 063485/0417 →
Priority Claims (1)
KR 10-2022-0087193 · Jul 14, 2022 · national
Continuity (1)
Related Publication 20240020234A1 · Jan 18, 2024
References Cited (31)
US 5684978A · Sarma et al. · 1997 [cited by applicant]
US 6473814B1 · Lyons · 2002 [cited by examiner]
US 8630111B2 · Maheshwari et al. · 2014 [cited by applicant]
US 10222853B2 · Suh et al. · 2019 [cited by applicant]
US 10672441B2 · Penney et al. · 2020 [cited by applicant]
US 10755753B2 · Kang et al. · 2020 [cited by applicant]
US 11030128B2 · Betser et al. · 2021 [cited by applicant]
US 20050144371A1 · Walker · 2005 [cited by examiner]
US 20080301391A1 · Oh · 2008 [cited by examiner]
US 20090307446A1 · Johnson · 2009 [cited by applicant]
US 20130223165A1 · Maheshwari et al. · 2013 [cited by applicant]
US 20150149675A1 · Toyoda · 2015 [cited by examiner]
US 20150177815A1 · Zerbe · 2015 [cited by examiner]
US 20160092383A1 · Bains et al. · 2016 [cited by applicant]
US 20160378366A1 · Tomishima et al. · 2016 [cited by applicant]
US 20170255394A1 · Suh et al. · 2017 [cited by applicant]
US 20170351433A1 · Walker · 2017 [cited by examiner]
US 20180276149A1 · Bains · 2018 [cited by applicant]
US 20180357009A1 · Ikarashi · 2018 [cited by applicant]
US 20190138245A1 · Shin et al. · 2019 [cited by applicant]
US 20190252009A1 · Kang et al. · 2019 [cited by applicant]
US 20190259433A1 · Penney et al. · 2019 [cited by applicant]
US 20190339906A1 · Murayama · 2019 [cited by applicant]
US 20210042245A1 · Betser et al. · 2021 [cited by applicant]
US 20220187988A1 · Gans et al. · 2022 [cited by applicant]
US 20220383916A1 · Park · 2022 [cited by examiner]
US 20230022530A1 · Haywood · 2023 [cited by examiner]
US 20230289063A1 · Hsieh · 2023 [cited by examiner]
Proposed DDR4 Full spec update(79-4C), Committee Letter Ballot, Ballot Template Version Draft rev. 8/11, JEDEC, 2011, 258 pages. [cited by applicant]
DDR5 Full Spec Draft Rev1.81, Proposed DDR5 Full spec (79-5A), Committee Letter Ballot, Ballot Template Version draft rev. 8/11, JEDEC, 2011, 503 pages. [cited by applicant]
European Extended Search Report issued Dec. 19, 2023 by the European Patent Office for EP Patent Application No. 23184647.8. [cited by applicant]