Granted Patent B2

US 12,249,532 · App. 18/140,427 · Granted Mar 11, 2025

Inventors: Christopher Andrew Bower (Raleigh, NC); Matthew Meitl (Durham, NC); Salvatore Bonafede (Chapel Hill, NC); Brook Raymond (Cary, NC); Carl Ray Prevatte, Jr. (Raleigh, NC)

Assignee: X Display Company Technology Limited

H01L21/6835B41F16/00H01L21/67144H01L33/0093H01L33/0095H01L27/15H01L2221/68359H01L2221/68363H01L2221/68381

Abstract

Claims (17)

1. A device structure, comprising:

a lower layer comprising a semiconductor material having a lateral extent;

a patterned upper layer comprising an electrically controllable semiconductor device disposed entirely on the lower layer, wherein the semiconductor device-comprises the semiconductor material and the patterned upper layer has a lateral extent less than or equal to the lateral extent of the lower layer; and

a physically continuous tether structure comprising (i) a tether device portion at least partly on the upper layer and the lower layer and (ii) a fractured tether adjacent to and in a common layer with the lower layer.

2. The device structure of claim 1 , wherein the semiconductor material is GaAs.

3. The device structure of claim 2 , wherein the tether structure comprises a dielectric.

4. The device structure of claim 1 , wherein the semiconductor material comprises one or more of a semiconductor, a compound semiconductor, sapphire, silicon {100}, or silicon {111}.

5. The device structure of claim 1 , wherein the semiconductor device is a light-emitting diode or an integrated circuit.

6. The device structure of claim 1 , wherein the semiconductor device and the physically continuous tether structure comprise a common material.

7. The device structure of claim 1 , wherein the fractured tether is fractured at least partially on a side of the lower layer opposite the upper layer.

8. The device structure of claim 1 , wherein the fractured tether is fractured at least in a portion of the continuous tether structure in contact with the lower layer.

9. The device structure of claim 1 , wherein a fracture line of the fractured tether is at least partially in contact with the lower layer.

10. The device structure of claim 9 , wherein the fracture line extends at least partially or entirely along a side wall or edge wall of the lower layer.

11. The device structure of claim 9 , wherein the fracture line is at least partially in contact with a side wall or edge wall of the lower layer.

12. The device structure of claim 1 , wherein a fracture line of the fractured tether extends from a top of tether inward toward the lower layer.

13. The device structure of claim 1 , wherein a fracture line of the fractured tether is angled.

14. The device structure of claim 1 , wherein a fracture line of the fractured tether extends from a corner of the physically continuous tether structure.

Assignments (2)

Continuity (4)

References Cited (131)