Hybrid system including photonic and electronic integrated circuits and cooling plate
Techniques disclosed herein relate generally to integrating photonic integrated circuits and electronic integrated circuits in a same package. A device includes a semiconductor substrate and a die stack on the semiconductor substrate. The die stack includes a photonic integrated circuit (PIC) die and an electronic integrated circuit (EIC) die. The PIC die includes a PIC substrate and a photonic integrated circuit formed on the PIC substrate. The EIC die includes an EIC substrate and an electronic integrated circuit formed on the EIC substrate. The EIC die and the PIC die are bonded such that the PIC substrate and the EIC substrate are disposed on opposing sides of the die stack. The PIC substrate is bonded to the semiconductor substrate. The device also includes a cooling plate bonded to the EIC substrate.
1. A device comprising:
a photonic integrated circuit (PIC) die comprising a photonic integrated circuit formed at a first surface of the PIC die; and
an electronic integrated circuit (EIC) die comprising:
an electronic integrated circuit formed at a first surface of the EIC die; and
a plurality of wire bonding pads formed on, in a cross-sectional view, both sides of a second surface of the EIC die, the second surface of the EIC die being opposite to the first surface of the EIC die; and
wherein the first surface of the PIC die is bonded to the first surface of the EIC die.
2. The device of claim 1 wherein the EIC die further comprises a through silicon via (TSV) extending from the first surface of the EIC die to the second surface of the EIC die.
3. The device of claim 2 wherein the electronic integrated circuit is electrically coupled to the plurality of wire bonding pads through the TSV.
4. The device of claim 2 further comprising a handle wafer, wherein the PIC die is bonded to the handle wafer.
5. The device of claim 4 wherein:
a second surface of the PIC die is bonded to the handle wafer; and
the second surface of the PIC die is opposite to the first surface of the PIC die.
6. The device of claim 5 wherein the second surface of the PIC die is fusion bonded to the handle wafer.
7. The device of claim 4 wherein the handle wafer comprises a silicon handle wafer.
8. The device of claim 4 further comprising at least one circuit board assembly attached to the handle wafer.
9. The device of claim 8 wherein the at least one circuit board assembly is electrically coupled to at least one of the plurality of wire bonding pads.
10. The device of claim 9 wherein the at least one circuit board assembly is electrically coupled to the at least one of the plurality of wire bonding pads through at least one bonding wire.
11. The device of claim 8 wherein the at least one circuit board assembly is at least one printed circuit board (PCB).
12. The device of claim 1 wherein the first surface of the PIC die is fusion bonded to the first surface of the EIC die.
13. The device of claim 12 wherein the first surface of the PIC die is fusion bonded to the first surface of the EIC die during a wafer bonding process.
14. The device of claim 1 wherein the photonic integrated circuit comprises a single photon detector.
15. The device of claim 14 wherein the electronic integrated circuit comprises a logic circuit.
16. The device of claim 15 wherein the single photon detector is electrically coupled to the logic circuit.
17. The device of claim 1 further comprising a cooling plate coupled to the second surface of the EIC die.
18. The device of claim 17 wherein the cooling plate is coupled to the second surface of the EIC die through at least one mesa structure.
19. The device of claim 17 wherein the cooling plate comprises a metal plate.
20. The device of claim 17 wherein the cooling plate comprises a semiconductor substrate.