Solid-state imaging element, imaging device, and control method of solid-state imaging element
An object is to reduce a circuit scale in a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.
1. A light detection device comprising:
a first semiconductor substrate including
a plurality of photoelectric conversion elements including a first photoelectric conversion element,
a transfer transistor coupled to the first photoelectric conversion element, and
a pixel signal generation circuitry coupled to the transfer transistor, the pixel signal generation circuitry including a reset transistor and being configured to output a first pixel signal; and
a second semiconductor substrate including
an event detection circuitry that includes a current/voltage conversion circuitry configured to output a second pixel signal based on the first photoelectric conversion element, a buffer coupled to the current/voltage conversion circuitry, and a subtractor coupled to the buffer and a quantizer; wherein
the quantizer is configured to output a second digital signal based on the second pixel signal, and
an analog to digital conversion circuitry receives the first pixel signal from the pixel signal generation circuitry, and converts the first pixel signal to a first digital signal.
2. The light detection device according to claim 1 , wherein
the pixel signal generation circuitry further includes:
a floating diffusion portion configured to accumulate charge from the first photoelectric conversion element, the pixel signal generation circuitry being configured to generate a voltage corresponding to an amount of the charge accumulated in the floating diffusion portion.
3. The light detection device according to claim 1 , wherein
the event detection circuitry is configured to detect whether a change amount of the first pixel signal exceeds a predetermined threshold.
4. The light detection device according to claim 3 , wherein
the second pixel signal is selected when the change amount of the first pixel signal exceeds the predetermined threshold.
5. The light detection device according to claim 1 , wherein
the first semiconductor substrate is arranged on a first chip, and the second semiconductor substrate is arranged on a second chip stacked on the first chip.
6. The light detection device according to claim 1 , wherein
the plurality of photoelectric conversion elements are arranged on a first chip, and the event detection circuitry is arranged on a second chip stacked on the first chip.
7. The light detection device according to claim 1 , wherein
the current/voltage conversion circuitry is configured to convert a photocurrent based on the output of the first photoelectric conversion element into a voltage signal of a logarithm of the photocurrent.
8. A vehicle control system comprising the light detection device according to claim 1 .
9. The vehicle control system according to claim 8 , wherein
the pixel signal generation circuitry further includes:
a floating diffusion portion configured to accumulate charge from the first photoelectric conversion element, the pixel signal generation circuitry being configured to generate a voltage corresponding to an amount of the charge accumulated in the floating diffusion portion.
10. The vehicle control system according to claim 8 , wherein
the event detection circuitry is configured to detect whether a change amount of the first pixel signal exceeds a predetermined threshold.
11. The vehicle control system according to claim 10 , wherein
the second pixel signal is selected when the change amount of the first pixel signal exceeds the predetermined threshold.
12. The vehicle control system according to claim 8 , wherein
the first semiconductor substrate is arranged on a first chip, and the second semiconductor substrate is arranged on a second chip stacked on the first chip.
13. The vehicle control system according to claim 8 , wherein
the current/voltage conversion circuitry is configured to convert a photocurrent based on the output of the first photoelectric conversion element into a voltage signal of a logarithm of the photocurrent.
14. A light detection device comprising:
a first semiconductor substrate including
a plurality of photoelectric conversion elements including a first photoelectric conversion element,
a transfer transistor coupled to the first photoelectric conversion element, and
a pixel signal generation circuitry coupled to the transfer transistor, the pixel signal generation circuitry including a reset transistor and being configured to output a first pixel signal; and
a second semiconductor substrate including
an event detection circuitry that includes a current/voltage conversion circuitry configured to output a second pixel signal based on the first photoelectric conversion element, and
a quantizer configured to output a second digital signal based on the second pixel signal;
wherein an analog to digital conversion circuitry receives the first pixel signal from the pixel signal generation circuitry, and converts the first pixel signal to a first digital signal,
the plurality of photoelectric conversion elements are arranged on a first chip, and the event detection circuitry is arranged on a second chip stacked on the first chip, and
the analog to digital conversion circuitry is arranged on the second chip.
15. A vehicle control system comprising the light detection device according to claim 14 .