Alumina sintered body and method for manufacturing the same
An alumina sintered body having a low dielectric loss tangent and a method for manufacturing the alumina sintered body are provided. An alumina sintered body contains Al 2 O 3 99.50 mass % or more, and 99.95 mass % or less and sodium and silicon, wherein at a surface layer A in any given cross-section and a central portion B of the cross-section in a depth direction from the surface layer A, a concentration ratio of sodium to silicon in the surface layer A is smaller than the concentration ratio of sodium to silicon at the central portion B.
1. An alumina sintered body containing Al 2 O 3 in an amount of 99.50 mass % or more, and 99.95 mass % or less, the alumina sintered body further containing sodium and silicon,
wherein a dielectric loss tangent (a value of tan δ) at 4 GHz is 1 × 10 −4 or less,
wherein at a surface layer A in any given cross-section and at a central portion B of the cross-section in a depth direction from the surface layer A, a concentration ratio of sodium to silicon in the surface layer part A is smaller than the concentration ratio of sodium to silicon at the central portion B,
wherein the concentration ratio of sodium to silicon of the alumina sintered body is 0.3 or less, and
wherein the surface layer part A is within a range of 10 mm from a surface in the depth direction, and the central portion B is a region within a range of 10 mm in the depth direction centering at a center of the cross-section.
2. The alumina sintered body recited in claim 1 , wherein an aspect ratio of an Al 2 O 3 crystal grain in the surface layer part A is smaller than the aspect ratio of the Al 2 O 3 crystal grain at the central portion B.
3. A method for manufacturing the alumina sintered body recited in claim 1 , comprising:
a step of granulating granules from a mixture of alumina powder as raw material to which silicon dioxide powder used as a silicon content is added, and mixed with a binder and solvent, using a spray granulator,
a step of forming compacts by molding the obtained granules,
a step of degreasing the compacts, and
a step of sintering the degreased compacts at a temperature between 1300° C. and 1800° C. in a reducing atmosphere or vacuum,
wherein the concentration ratio of sodium to silicon at the surface layer part A in any given cross-section is smaller than the concentration ratio of sodium to silicon at the central portion B of the cross-section in the depth direction from the surface layer part A, by allowing the sodium content to volatile from the degreased compacts.
4. The alumina sintered body recited in claim 1 , wherein the concentration ratio of sodium to silicon in the surface layer part A is 0.072 to 0.119 and the concentration ratio of sodium to silicon at the central portion B is 0.117 to 0.214.