Electronic device
An electronic device including a substrate, a conductive layer, a first driving component, and an electronic component is provided. The conductive layer is disposed on the substrate. A thickness of the conductive layer is between 0.5 μm and 12 μm. The first driving component is disposed on the conductive layer. The electronic component is disposed on the substrate and electrically connected to the first driving component.
1 . An electronic device, comprising:
a substrate;
a first insulating layer, disposed on the substrate;
a conductive layer, disposed on the substrate, wherein a thickness of the conductive layer is between 0.5 μm and 12 μm, and the conductive layer comprises a first conductive portion and a second conductive portion;
a second insulating layer, disposed on the conductive layer, wherein the conductive layer is disposed between the first insulating layer and the second insulating layer;
a first driving component, disposed on the first conductive portion of the conductive layer; and
an electronic component, disposed on the second conductive portion of the conductive layer and electrically connected to the first driving element,
wherein a thickness of the first insulating layer is smaller than the thickness of the conductive layer, and a thickness of the second insulating layer is smaller than the thickness of the conductive layer,
wherein the first conductive portion of the conductive layer comprises a grounding plate, the second conductive portion of the conductive layer comprises a pad portion, and the electronic component is electrically connected to the first driving component through the pad portion of the second conductive portion.
2 . The electronic device according to claim 1 , wherein the first driving component comprises a thin film transistor.
3 . The electronic device according to claim 2 , wherein the thin film transistor comprises an active layer, and a distance between the active layer and the conductive layer is between 0.3 μm and 2 μm.
4 . The electronic device according to claim 1 , wherein the thickness of the first insulating layer and the thickness of the second insulating layer are between 0.1 μm and 5 μm.
5 . The electronic device according to claim 2 , wherein the thin film transistor comprises an active layer, and the active layer comprises polysilicon.
6 . The electronic device according to claim 1 , further comprising a barrier layer disposed between the conductive layer and the first driving component.
7 . The electronic device according to claim 1 , further comprising a second driving component disposed on the conductive layer, wherein the conductive layer is overlapped with the first driving component and the second driving component.
8 . The electronic device according to claim 1 , wherein the electronic component comprises a varactor.
9 . The electronic device according to claim 1 , wherein a material of the conductive layer comprises copper.
10 . The electronic device according to claim 1 , wherein the conductive layer comprises a multilayer structure.
11 . An electronic device, comprising:
a substrate;
a first insulating layer, disposed on the substrate;
a conductive layer, disposed on the substrate, wherein a thickness of the conductive layer is between 0.5 μm and 12 μm, the conductive layer comprises a first conductive portion and a second conductive portion, and the first conductive portion of the conductive layer has an opening;
a second insulating layer, disposed on the conductive layer, wherein the conductive layer is disposed between the first insulating layer and the second insulating layer;
a first driving component, disposed on the second insulating layer, wherein the first driving component is overlapped with the opening of the first conductive portion of the conductive layer, and in a top view, the first driving component is within the opening; and
an electronic component, disposed on the second conductive portion of the conductive layer and electrically connected to the first driving component,
wherein a thickness of the first insulating layer is smaller than the thickness of the conductive layer, and a thickness of the second insulating layer is smaller than the thickness of the conductive layer.
12 . The electronic device according to claim 11 , wherein the first driving component comprises a thin film transistor.
13 . The electronic device according to claim 12 , wherein the thin film transistor comprises an active layer, and the active layer comprises polysilicon.
14 . The electronic device according to claim 11 , wherein the first conductive portion of the conductive layer comprises a grounding plate.
15 . The electronic device according to claim 11 , wherein the electronic component comprises a varactor.
16 . The electronic device according to claim 11 , wherein the thickness of the first insulating layer and the thickness of the second insulating layer are between 0.1 μm and 5 μm.