Backside metal patterning die singulation system and related methods
Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.
1. A method of aligning a substrate, the method comprising:
forming a plurality of die on a first side of the substrate;
thinning a second side of the substrate and forming an edge ring through the thinning;
forming a backside metal layer on the second side of the substrate;
applying a photoresist layer over the backside metal layer; and
aligning the substrate from the second side of the substrate using a plurality of alignment features comprised one of in the edge ring or on the photoresist layer.
2. The method of claim 1 , further comprising:
patterning the photoresist layer along a die street of the substrate;
etching through the backside metal layer located in the die street of the substrate, wherein the substrate is exposed through the etch; and
singulating the plurality of die comprised in the substrate through removing substrate material in the die street.
3. The method of claim 1 , wherein the plurality of alignment features are formed on the photoresist layer.
4. The method of claim 1 , wherein the substrate is thinned to less than 30 micrometers thick.
5. The method of claim 1 , wherein the backside metal layer is 10 micrometers thick.
6. The method of claim 1 , further comprising thinning the edge ring prior to aligning the substrate.
7. The method of claim 1 , wherein removing substrate material in the die street further comprises plasma etching.
8. A method of aligning a substrate, the method comprising:
forming a plurality of die on a first side of the substrate;
thinning a second side of the substrate and forming an edge ring through the thinning;
forming a seed layer on the second side of the substrate opposite the first side of the substrate;
applying a photoresist layer over the seed layer; and
aligning the substrate from the second side of the substrate using a plurality of alignment features comprised one of in the periphery of the substrate or on the photoresist layer.
9. The method of claim 8 , further comprising:
patterning the photoresist layer;
forming a backside metal layer over the seed layer;
removing the photoresist layer; and
singulating the plurality of die comprised in the substrate through removing substrate material in a die street and through removing the seed layer material in the die street.
10. The method of claim 8 , wherein the plurality of alignment features are formed on the photoresist layer.
11. The method of claim 9 , further comprising exposing the photoresist layer with a mask comprising a plurality of parallel slits thereon and rotating the mask 90 degrees and exposing the photoresist layer with the mask a second time.
12. The method of claim 8 , wherein removing substrate material in the die street further comprises plasma etching.
13. The method of claim 8 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers.
14. A method of singulating a plurality of die comprised in a substrate, the method comprising:
forming a plurality of die on a first side of the substrate;
thinning a second side of the substrate and forming an edge ring through the thinning;
forming a backside metal layer on the second side of the substrate;
applying a photoresist layer over the backside metal layer;
aligning the substrate using a plurality of alignment features comprised one of in the edge ring or on the photoresist layer;
patterning the photoresist layer along a die street of the substrate;
removing the backside metal layer located in the die street of the substrate, wherein the substrate is exposed through removal of the backside metal layer located in the die street; and
singulating the plurality of die comprised in the substrate through removing substrate material in the die street.
15. The method of claim 14 , wherein the plurality of alignment features are formed on the photoresist layer.
16. The method of claim 14 , wherein the substrate is aligned from the second side of the substrate.
17. The method of claim 14 , wherein the backside metal layer is 10 micrometers thick.
18. The method of claim 14 , wherein the substrate is thinned to less than 50 microns thick.
19. The method of claim 14 , wherein removing substrate material in the die street further comprises plasma etching.
20. The method of claim 14 , wherein the backside metal layer is removed through etching.