Treatment liquid and substrate washing method
An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.
1. A treatment liquid for a semiconductor device, comprising:
water;
a basic compound;
hexylene glycol; and
a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.
2. The treatment liquid according to claim 1 ,
wherein in a case where the treatment liquid comprises one kind of the compound A, a content of the compound A with respect to a total mass of the treatment liquid is 1,000 ppm by mass or less, and
in a case where the treatment liquid comprises two or more kinds of the compounds A, a content of each of the compounds A with respect to the total mass of the treatment liquid is 1,000 ppm by mass or less.
3. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises two or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a highest content among the compounds A is denoted by α and a content of a compound having a second highest content among the compounds A is denoted by β, a ratio α/β of the content α to the content β is less than 10 in terms of mass ratio.
4. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises three or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a second highest content among the compounds A is denoted by β and a content of a compound having a third highest content among the compounds A is denoted by γ, a ratio β/γ of the content β to the content γ is less than 10 in terms of mass ratio.
5. The treatment liquid according to claim 1 ,
wherein the treatment liquid comprises at least one kind selected from the group consisting of isobutene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, and 4-methyl-3-penten-2-ol.
6. The treatment liquid according to claim 1 ,
wherein a content of the hexylene glycol in the treatment liquid is 60% by mass or more with respect to a total mass of the treatment liquid.
7. The treatment liquid according to claim 1 ,
wherein the basic compound comprises at least one selected from the group consisting of tetramethylammonium hydroxide, monoethanolamine, and hydroxylamine.
8. The treatment liquid according to claim 1 ,
wherein the basic compound comprises a compound B represented by Formula (1),
NH 2 —CH 2 CH 2 —X—CH 2 CH 2 —Y (1)
in Formula (1), X represents —NR— or —O—, R represents a hydrogen atom or a substituent, and Y represents a hydroxy group or a primary amino group.
9. The treatment liquid according to claim 8 ,
wherein the compound B comprises at least one selected from the group consisting of 2-(2-aminoethylamino)ethanol, 2,2′-oxybis(ethylamine), and 2-(2-aminoethoxy)ethanol.
10. The treatment liquid according to claim 8 ,
wherein a content of the compound B with respect to a total mass of the treatment liquid is 0.1% to 1.15% by mass.
11. The treatment liquid according to claim 1 ,
wherein the basic compound comprises two or more kinds of amine compounds.
12. The treatment liquid according to claim 11 ,
wherein in the treatment liquid, a ratio of a content of a compound having a highest content among the amine compounds to a content of an amine compound having a lowest content among the amine compounds is 9 to 100 in terms of mass ratio.
13. The treatment liquid according to claim 1 ,
wherein the treatment liquid is used as a washing solution for removing etching residues from a substrate including a metal-containing layer or as a washing solution for removing residues from a substrate after chemical mechanical polishing.
14. A substrate washing method comprising a washing step of washing a substrate comprises a metal-containing layer, by contacting the substrate with the treatment liquid according to claim 1 .
15. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises two or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a highest content among the compounds A is denoted by α and a content of a compound having a second highest content among the compounds A is denoted by β, a ratio α/β of the content α to the content β is less than 10 in terms of mass ratio.
16. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises three or more kinds of the compounds A, and
in the treatment liquid, in a case where a content of a compound having a second highest content among the compounds A is denoted by β and a content of a compound having a third highest content among the compounds A is denoted by γ, a ratio β/γ of the content β to the content γ is less than 10 in terms of mass ratio.
17. The treatment liquid according to claim 2 ,
wherein the treatment liquid comprises at least one kind selected from the group consisting of isobutene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, and 4-methyl-3-penten-2-ol.
18. The treatment liquid according to claim 2 ,
wherein a content of the hexylene glycol in the treatment liquid is 60% by mass or more with respect to a total mass of the treatment liquid.
19. The treatment liquid according to claim 2 ,
wherein the basic compound comprises at least one selected from the group consisting of tetramethylammonium hydroxide, monoethanolamine, and hydroxylamine.
20. The treatment liquid according to claim 2 ,
wherein the basic compound comprises a compound B represented by Formula (1),
NH 2 —CH 2 CH 2 —X—CH 2 CH 2 —Y (1)
in Formula (1), X represents —NR— or —O—, R represents a hydrogen atom or a substituent, and Y represents a hydroxy group or a primary amino group.