Thermoelectric composite, preparation method therefor, and thermoelectric device and semiconductor device each comprising thermoelectric composite
Provided is a preparation method for a thermoelectric composite. The preparation method for a thermoelectric composite comprises the steps of: preparing a base substrate containing a first binary metal oxide; and providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second biliary metal oxide resulting from the reaction of the metal precursor and the reaction material, wherein in the step of forming the material film, a 2-dimensional electron gas is generated between the base substrate and the material film as the material film is formed on the base substrate.
1. A preparation method for a thermoelectric composite, the preparation method comprising:
preparing a base substrate containing a first binary metal oxide; and
providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second binary metal oxide resulting from reaction of the metal precursor and the reaction material,
wherein forming the material film includes generating a 2-dimensional electron gas between the base substrate and the material film as the material film is formed on the base substrate; and
wherein a process temperature for forming the material film is controlled, so that a sheet resistance at an interface between the base substrate and the material film is controlled.
2. The preparation method of claim 1 , wherein forming the material film includes:
providing a first metal precursor and the reaction material on the base substrate; and
after providing the first metal precursor and the reaction material on the base substrate, providing a second metal precursor and the reaction material on the base substrate.
3. The preparation method of claim 2 , wherein
the first metal precursor includes trimethylaluminum (TMA), and
the second metal precursor includes dimethylaluminumisopropoxide (DMAIP).
4. The preparation method of claim 2 , wherein
providing the first metal precursor and the reaction material is defined as a first unit process,
providing the second metal precursor and the reaction material is defined as a second unit process, and
each of the first unit process and the second unit process is repeatedly performed multiple times.
5. A preparation method for a thermoelectric composite, the preparation method comprising:
preparing a base substrate containing a first binary metal oxide; and
providing a metal precursor and a reaction material containing oxygen (O) onto the base substrate to form a material film containing a second binary metal oxide resulting from reaction of the metal precursor and the reaction material;
wherein forming the material film includes generating a 2-dimensional electron gas between the base substrate and the material film as the material film is formed on the base substrate; and
wherein a process temperature for forming the material film is controlled, so that a carrier density at an interface between the base substrate and the material film is controlled.
6. The preparation method of claim 5 , wherein the reaction material includes water (H 2 O).