Deeply integrated voltage regulator architectures
A system is disclosed. The system includes a substrate, and a first chip on the substrate, where a load circuit is integrated on the first chip. The system also includes a second chip on the substrate, where a power delivery circuit is configured to deliver current to the load circuit according to a regulated voltage at a node. The power delivery circuit includes a first circuit configured to generate an error signal based at least in part on the regulated voltage, and a voltage generator including power switches configured to modify the regulated voltage according to the error signal, where the first circuit of the power delivery circuit is integrated on the first chip, and where at least a portion of the power switches of the power delivery circuit are integrated on the second chip.
1. A method of operating a system, the method comprising:
providing a substrate;
providing a first semiconductor die disposed on the substrate and including a load circuit and an error signal generation circuit;
providing a second semiconductor die disposed on the substrate and including a power converter circuit arranged to deliver power to the load circuit, the power converter circuit including a plurality of power switches coupled to a control circuit;
receiving, by the control circuit, an error signal from the error signal generation circuit; and
controlling, by the control circuit, a power delivered to the load circuit via the plurality of power switches in response to receiving the error signal from the error signal generation circuit.
2. The method of claim 1 , wherein the power converter circuit is coupled to the load circuit at a node.
3. The method of claim 2 , wherein the error signal represents a difference between a regulated voltage at the node and a reference voltage.
4. The method of claim 3 , wherein the error signal comprises a series of pulses, and wherein a frequency of the series of pulses is based on the difference.
5. The method of claim 2 , wherein the error signal represents a difference between a regulated voltage at the node and a reference voltage multiplied by again factor.
6. The method of claim 5 , wherein the error signal comprises a series of pulses, and wherein a frequency of the series of pulses is based on the difference.
7. The method of claim 1 , wherein the error signal is an analog voltage.
8. The method of claim 1 , wherein the error signal is a digital value.
9. The method of claim 1 , wherein the error signal generation circuit comprises an analog-to-digital converter configured to generate the error signal.
10. The method of claim 1 , wherein the power converter circuit comprises a capacitor connected to the load circuit, wherein the capacitor is integrated on the first semiconductor die.
11. The method of claim 1 , wherein the power converter circuit comprises one or more inductors connected to the load circuit.
12. The method of claim 11 , wherein the inductors are formed on the substrate separate from the first and second semiconductor die.
13. The method of claim 11 , wherein the inductors are formed on the second semiconductor die.
14. The method of claim 1 , wherein the plurality of power switches are integrated on the second semiconductor die.
15. The method of claim 1 , further comprising a reference voltage generator configured to generate a reference voltage.
16. The method of claim 15 , wherein the reference voltage generator is integrated on the first semiconductor die.
17. The method of claim 15 , wherein the reference voltage generator is integrated on the second semiconductor die.
18. The method of claim 1 , wherein the power converter circuit comprises:
a capacitor connected to the load circuit; and
one or more inductors connected to the load circuit;
wherein the plurality of power switches, the capacitor, and the one or more inductors collectively form a voltage regulator.
19. The method of claim 18 , wherein the voltage regulator is multiphase.
20. The method of claim 1 , wherein all of the power switches of the power converter circuit are integrated on the second semiconductor die.