IP Library Granted Patent US 12,414,239
Granted Patent B2
US 12,414,239 · App. 18/164,798 · Granted Sep 9, 2025

Methods for producing an etch resist pattern on a metallic surface

Inventors: Moshe Frenkel (Jerusalem, IL); Nava Shpaisman (Kedumim, IL)
Assignee: Kateeva, Inc.
H05K3/062C09D11/54C23F1/02C23F1/18H05K3/061G03F7/0002
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Quick Facts
Patent No.
US 12,414,239
App. No.
18/164,798
Granted
Sep 9, 2025
Kind
B2
Abstract

Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

Claims (31)

1. A method comprising:

depositing a first aqueous composition comprising a first reactive component comprising a reactive polymer, a long-chain quaternary amine, or a metal cation onto a substrate;

depositing a second aqueous composition comprising a second reactive component comprising an anionic material onto the substrate, wherein, upon contact between the first aqueous composition and the second aqueous composition, the first reactive component chemically reacts with the second reactive component to form an immobilized bi-component mask, wherein one or more of depositing the first aqueous composition and depositing the second aqueous composition is a patterned deposition comprising non-impact printing, and one or more of the first aqueous composition and the second aqueous composition is deposited directly onto a metallic layer of the substrate;

removing unreacted portions of the first aqueous composition, the second aqueous composition, or both to expose portions of the metallic layer; and

depositing an etch solution to remove the exposed portions of the metallic layer.

2. The method of claim 1 , wherein the first reactive component is a fixating reactive component and the second reactive component is an etch-resist reactive component.

3. The method of claim 1 , wherein the first reactive component is an etch-resist reactive component and the second reactive component is a fixating reactive component.

4. The method of claim 1 , wherein:

the first reactive component comprises at least one imine group, at least one amine group, or both; and

the anionic material comprises at least one phosphate group, at least one sulfonate group, at least one acrylate group, or any combination thereof.

5. The method of claim 1 , wherein at least one of the first reactive component and the second reactive component comprises a polymer.

6. The method of claim 1 , wherein the bi-component mask is insoluble in at least one of water and the etch solution.

7. The method of claim 1 , wherein the first and second aqueous compositions are deposited on the substrate sequentially in a first deposition and a second deposition, and further comprising drying the material deposited in the first deposition before performing the second deposition.

8. The method of claim 1 , wherein the removing the unreacted portions and depositing of the etch solution are performed concurrently.

9. The method of claim 1 , further comprising removing the bi-component mask after depositing the etch solution.

10. The method of claim 1 , wherein the patterned deposition comprises inkjet printing.

11. The method of claim 1 , wherein the metallic layer comprises copper.

12. The method of claim 1 , wherein at least one of the first aqueous composition and the second aqueous composition further comprises a dye.

13. The method of claim 1 , wherein both the first and the second aqueous compositions are deposited by inkjet printing.

14. The method of claim 1 , wherein:

the first reactive component comprises a first reactive polymer and the second reactive component comprises a second reactive polymer.

15. The method of claim 14 , wherein the first reactive polymer comprises one or more of a polyethyleneimine, a heteropolymer of vinyl pyrrolidone, a poly-quaternary amine, and a polyamine in a natural form or as an ammonium salt.

16. The method of claim 14 , wherein the second reactive polymer comprises one or both of acrylate and styrene acrylate.

17. The method of claim 1 , wherein depositing the first aqueous composition comprises depositing the first aqueous composition as a continuous coating on the metallic layer.

18. The method of claim 1 , wherein, in a dried state, a thickness of the bi-component mask ranges from 0.01 μm to 12 μm.

19. A method comprising:

depositing a first aqueous composition comprising a first reactive component directly onto a metallic layer of a substrate;

depositing a second aqueous composition comprising a second reactive component onto the substrate in contact with the first aqueous composition, wherein upon contact the first and the second reactive components undergo a chemical reaction to form an immobilized bi-component mask, wherein depositing the first aqueous composition comprises non-impact printing, depositing the second aqueous composition comprises non-impact printing, or both;

removing unreacted material from the substrate to expose portions of the metallic layer; and

applying an etch solution to the substrate to remove the exposed portions of the metallic layer,

wherein each of the first and second reactive components comprises a material chosen from the group consisting of reactive polymers, long-chain quaternary amines, a metal cation, and an anionic component.

Assignments (1)
SECURITY INTEREST Recorded Nov 13, 2025
From: KATEEVA, INC.
To: SINO XIN JI LIMITED
Reel/Frame 072891/0259 →
Continuity (4)
Continuation 16912818 · Jun 26, 2020
Continuation 15578300
Provisional Application 62170713 · Jun 4, 2015
Related Publication 20230189447A1 · Jun 15, 2023
References Cited (153)
US 4015706A · Goffredo et al. · 1977 [cited by applicant]
US 4127438A · Babcock et al. · 1978 [cited by applicant]
US 4604314A · Gentzkow et al. · 1986 [cited by applicant]
US 4756994A · Araki et al. · 1988 [cited by applicant]
US 4946711A · Hawker et al. · 1990 [cited by applicant]
US 5055374A · Seio et al. · 1991 [cited by applicant]
US 5376503A · Audett et al. · 1994 [cited by applicant]
US 6066197A · Bristol et al. · 2000 [cited by applicant]
US 6218074B1 · Dueber et al. · 2001 [cited by applicant]
US 6222136B1 · Appelt et al. · 2001 [cited by applicant]
US 6399273B1 · Yamada et al. · 2002 [cited by applicant]
US 6579660B1 · Figov · 2003 [cited by applicant]
US 6858352B1 · Band · 2005 [cited by applicant]
US 6860925B2 · Soutar et al. · 2005 [cited by applicant]
US 7147765B2 · Klocke et al. · 2006 [cited by applicant]
US 7282240B1 · Jackman · 2007 [cited by examiner]
US 8421215B2 · Tani et al. · 2013 [cited by applicant]
US 8524438B2 · Kim · 2013 [cited by examiner]
US 9513551B2 · Frenkel · 2016 [cited by examiner]
US 10398034B2 · Shpaisman et al. · 2019 [cited by applicant]
US 10743420B2 · Frenkel et al. · 2020 [cited by applicant]
US 10806035B2 · Shpaisman et al. · 2020 [cited by applicant]
US 11006528B2 · Shpaisman et al. · 2021 [cited by applicant]
US 11255018B2 · Shpaisman et al. · 2022 [cited by applicant]
US 11807947B2 · Shpaisman et al. · 2023 [cited by applicant]
US 20030164466A1 · Hauf et al. · 2003 [cited by applicant]
US 20030177639A1 · Berg · 2003 [cited by applicant]
US 20040023120A1 · Nishikubo et al. · 2004 [cited by applicant]
US 20040079729A1 · Chen et al. · 2004 [cited by applicant]
US 20040245213A1 · Fukase et al. · 2004 [cited by applicant]
US 20050227492A1 · Hah et al. · 2005 [cited by applicant]
US 20050250052A1 · Nguyen · 2005 [cited by applicant]
US 20060020788A1 · Han et al. · 2006 [cited by applicant]
US 20060049129A1 · Hopper et al. · 2006 [cited by applicant]
US 20060060563A1 · Kim et al. · 2006 [cited by applicant]
US 20060199394A1 · Takahashi et al. · 2006 [cited by applicant]
US 20070237899A1 · Sawoska et al. · 2007 [cited by applicant]
US 20080245768A1 · Cottrell et al. · 2008 [cited by applicant]
US 20080308003A1 · Krol et al. · 2008 [cited by applicant]
US 20090116401A1 · Ginzburg et al. · 2009 [cited by applicant]
US 20090163615A1 · Halahmi et al. · 2009 [cited by applicant]
US 20090188706A1 · Endo · 2009 [cited by applicant]
US 20090278904A1 · Oh et al. · 2009 [cited by applicant]
US 20120045583A1 · Frenkel et al. · 2012 [cited by applicant]
US 20120288683A1 · Kuo et al. · 2012 [cited by applicant]
US 20130298398A1 · Miyasaka et al. · 2013 [cited by applicant]
US 20130334036A1 · Keigler et al. · 2013 [cited by applicant]
US 20140141169A1 · Huelsmann et al. · 2014 [cited by applicant]
US 20140252571A1 · Khandekar et al. · 2014 [cited by applicant]
US 20140290520A1 · Frenkel et al. · 2014 [cited by applicant]
US 20140363632A1 · Smet et al. · 2014 [cited by applicant]
US 20150159124A1 · Takahashi et al. · 2015 [cited by applicant]
US 20150267305A1 · Choi et al. · 2015 [cited by applicant]
US 20170264066A1 · Oki et al. · 2017 [cited by applicant]
US 20180146556A1 · Frenkel et al. · 2018 [cited by applicant]
US 20180192521A1 · Shpaisman et al. · 2018 [cited by applicant]
US 20180242457A1 · Shpaisman et al. · 2018 [cited by applicant]
US 20190335589A1 · Shpaisman et al. · 2019 [cited by applicant]
US 20200396842A1 · Frenkel et al. · 2020 [cited by applicant]
US 20210007225A1 · Shpaisman et al. · 2021 [cited by applicant]
CN 1440466A · 2003 [cited by applicant]
CN 1659310A · 2005 [cited by applicant]
CN 1899003A · 2007 [cited by applicant]
CN 1925724A · 2007 [cited by applicant]
CN 101023395A · 2007 [cited by applicant]
CN 104011265A · 2014 [cited by applicant]
CN 107710070A · 2018 [cited by applicant]
EP 1125760B1 · 2006 [cited by applicant]
JP S49079240 · 1974 [cited by applicant]
JP H07170053A · 1995 [cited by applicant]
JP 2002245794A · 2002 [cited by applicant]
JP 2003012971A · 2003 [cited by applicant]
JP 2005033049A · 2005 [cited by applicant]
JP 2005079479A · 2005 [cited by applicant]
JP 2006018095A · 2006 [cited by applicant]
JP 2007507616A · 2007 [cited by applicant]
JP 2007250884A · 2007 [cited by applicant]
JP 2009059777A · 2009 [cited by applicant]
JP 2009522205A · 2009 [cited by applicant]
JP 2009532205 · 2009 [cited by applicant]
JP 2009272609A · 2009 [cited by applicant]
JP 2011171323A · 2011 [cited by applicant]
JP 2011243256A · 2011 [cited by applicant]
JP 2013162007A · 2013 [cited by applicant]
JP 2013211346A · 2013 [cited by applicant]
JP 2015129342A · 2015 [cited by applicant]
JP 2015227499A · 2015 [cited by applicant]
JP 2020501375A · 2020 [cited by applicant]
KR 1020090117253A · 2009 [cited by applicant]
KR 1020150109932A · 2015 [cited by applicant]
TW 201534756A · 2015 [cited by applicant]
WO 2003081966A2 · 2003 [cited by applicant]
WO 2009116401A1 · 2009 [cited by applicant]
WO 2016185215A1 · 2016 [cited by applicant]
WO 2016193978A2 · 2016 [cited by applicant]
WO 2017025949A1 · 2017 [cited by applicant]
CN Second Office Action dated Jul. 10, 2024 for CN Patent Application No. 202110700960.9. [cited by applicant]
JP Office Action dated Jul. 12, 2024 for JP Patent Application No. 2023-083553. [cited by applicant]
JP Office Action dated Sep. 9, 2024 for JP Patent Application No. 2023-111882. [cited by applicant]
Non-final Office Action dated Jun. 20, 2024 for U.S. Appl. No. 18/483,673. [cited by applicant]
Second Office Action issued Jul. 10, 2024 for CN Patent Application No. 202110700960.9. [cited by applicant]
CN Office Action issued on Jan. 25, 2021 for CN Patent Application No. 201780086295. [cited by applicant]
CN Office Action issued on Jul. 2, 2020 for CN Patent Application No. 201680038043.6. [cited by applicant]
CN Second Office Action dated May 12, 2021 for CN Patent Application No. 201680048035.X. [cited by applicant]
Decision of Refusal issued Jan. 26, 2021 in JP Patent Application No. 2018-515364. [cited by applicant]
Extended EP Search issued on Feb. 27, 2019 for EP Patent Application No. 16834759.9. [cited by applicant]
Extended EP Search Report issued Aug. 31, 2021 for EP Patent Application No. 21166748.0. [cited by applicant]
Extended EP Search Report issued Aug. 4, 2020 in EP Patent Application No. 17880261.7. [cited by applicant]
Extended EP Search Report issued on Jan. 3, 2019, to EP Patent Application 16802692.0. [cited by applicant]
Final Notice of Reasons for Refusal issued Jan. 26, 2021 in JP Patent Application No. 2019-092613. [cited by applicant]
Final Office Action issued Jul. 7, 2021 for U.S. Appl. No. 16/912,818. [cited by applicant]
Final Office action issued Feb. 11, 2019 for U.S. Appl. No. 15/751,866. [cited by applicant]
First Office Action issued Oct. 30, 2020 in CN Patent Application No. 201680048035X. [cited by applicant]
International Search Report and Written Opinion issued on Apr. 9, 2018 to PCT Application No. PCT/IL17/51338. [cited by applicant]
International Search report and Written Opinion issued on Jan. 6, 2017 to PCT Application No. PCT/IL/50820. [cited by applicant]
International Search Report and Written Opinion issued on Nov. 17, 2016 to PCT Application No. PCT/IL16/50567. [cited by applicant]
JP Decision of Refusal dated Mar. 10, 2023 for JP Patent Application No. 2019-531090. [cited by applicant]
JP Decision of Refusal dated Mar. 26, 2021 for JP Patent Application No. 2018-507595. [cited by applicant]
JP Decision of Refusal issued on Feb. 8, 2021 for JP Patent Application No. 2018-515364. [cited by applicant]
JP Final Notice of Reason of Refusal issued Feb. 8, 2021 for JP Patent Application No. 2019-092613. [cited by applicant]
JP Office Action issued Dec. 24, 2021 to JP Patent Application No. 2019-531090. [cited by applicant]
JP Office Action issued Jun. 5, 2020 to JP Patent Application No. 2018-515364. [cited by applicant]
KR Notification of Reason for Refusal issued Oct. 7, 2021 for KR Patent Application No. 10-2019-7016384. [cited by applicant]
KR Office Action dated Oct. 13, 2022 for KR Patent Application No. 10-2017-7037881. [cited by applicant]
Non Final Office Action issued on Jul. 20, 2020 to U.S. Appl. No. 16/507,358. [cited by applicant]
Non Final Office Action issued on Oct. 21, 2019 for U.S. Appl. No. 15/578,300. [cited by applicant]
Non Final Office Action issued on Oct. 9, 2019 to U.S. Appl. No. 15/751,866. [cited by applicant]
Non-final Office Action dated Mar. 21, 2023 for U.S. Appl. No. 17/647,756. [cited by applicant]
Non-Final Office Action dated May 18, 2021 for U.S. Appl. No. 16/912,818. [cited by applicant]
Non-Final Office Action dated Mar. 1, 2022 for U.S. Appl. No. 16/912,818. [cited by applicant]
Non-Final Office Action issued Aug. 11, 2021 in U.S. Appl. No. 16/948,597. [cited by applicant]
Non-final Office Action issued Aug. 12, 2022 for JP Patent Application No. 2019-531090. [cited by applicant]
Non-Final Office action issued on Sep. 28, 2018 to U.S. Appl. No. 15/751,866. [cited by applicant]
Non-Final Office Action issued Sep. 27, 2021 in U.S. Appl. No. 16/912,818. [cited by applicant]
Notice of Allowance dated Apr. 14, 2022 for U.S. Appl. No. 17/301,459. [cited by applicant]
Notice of Allowance issued Jan. 8, 2021 to U.S. Appl. No. 15/507,358. [cited by applicant]
Notice of Allowance issued Jun. 2, 2020 to U.S. Appl. No. 15/751,866. [cited by applicant]
Notice of Allowance issued Mar. 31, 2020 to U.S. Appl. No. 15/578,300. [cited by applicant]
Notice of Allowance issued Oct. 20, 2021 for U.S. Appl. No. 16/948,597. [cited by applicant]
Notice of Final Rejection dated Apr. 14, 2022 for KR Patent Application No. 10-2019-7016384. [cited by applicant]
Notice of First Office Action issued Jan. 25, 2021 in CN Patent Application No. 201780086295.0. [cited by applicant]
Notice of Reasons for Refusal issued Dec. 28, 2022 for JP Patent Application No. 2021-121139. [cited by applicant]
Notice of Reasons for Refusal issued Jul. 17, 2020 in JP Patent Application No. 20185075595. [cited by applicant]
Notice of Reasons for Refusal issued Jul. 20, 2022 for JP Patent Application No. 2021-121139. [cited by applicant]
Office Action issued Jun. 17, 2021 in TW Patent Application No. 106143295. [cited by applicant]
Quan et al. “Adsorption Behaviour of Schiff Base and Corrosion Protection of Resulting Films to Copper Substrate,” Corrosion Science, vol. 44, pp. 703-715, Jun. 6, 2000. [cited by applicant]
Request for the Submission of an Opinion issued Aug. 10, 2022 in KR Patent Application No. 10-2018-7007265. [cited by applicant]
Second Office Action issued Sep. 1, 2021 for CN Patent Application No. 201780086295.0. [cited by applicant]
Third Office Action dated Apr. 1, 2022 for CN Patent Application No. 201780086295. [cited by applicant]
TW Examination and Search Report issued Dec. 21, 2022 for TW Patent Application No. 111105647. [cited by applicant]
Decision of Refusal dated Mar. 10, 2023 for JP Patent Application No. 2019-531090. [cited by applicant]
Notice of Allowance issued Jul. 12, 2023, in U.S. Appl. No. 17/647,756. [cited by applicant]
Notice of Allowance mailed Dec. 4, 2024, in U.S. Appl. No. 18/483,673. [cited by applicant]