Vertical-cavity surface-emitting laser with dense epi-side contacts

1. An emitter array, comprising:

a substrate;

a plurality of emitters on an epitaxial side of the substrate, the plurality of emitters including a first emitter and a second emitter in a column of the emitter array;

a first metal layer to provide a first lower electrode of the first emitter in the epitaxial side of the substrate

a second metal layer to provide a second lower electrode of the second emitter in the epitaxial side of the substrate;

an isolation trench in the epitaxial side of the substrate separating the first emitter and the second emitter;

an isolation implant in the substrate through a bottom of the isolation trench, the isolation implant configured to electrically isolate the first lower electrode from the second lower electrode; and

a third metal layer to provide an upper electrode on the epitaxial side of the substrate,

wherein the upper electrode is shared among the first emitter and the second emitter, and

wherein a center-to-center distance between the first emitter and the second emitter is less than approximately 90 micrometers.

2. The emitter array of claim 1 , wherein a width of the isolation trench is less than or equal to approximately 10 micrometers.

3. The emitter array of claim 1 , wherein a width of the isolation trench is less than a depth of the isolation trench.

4. The emitter array of claim 1 , wherein the first emitter is connected in parallel with the second emitter.

5. The emitter array of claim 1 , further comprising:

a third emitter of the plurality of emitters; and

a fourth metal layer to provide a second upper electrode of the third emitter on the epitaxial side of the substrate,

wherein the first lower electrode is shared among the first emitter and the third emitter, and the second upper electrode is isolated from the upper electrode.

6. The emitter array of claim 5 , wherein the third emitter is in a second column of the emitter array,

wherein the first emitter and the third emitter are in a first row of the emitter array, and

wherein the second emitter is in a second row of the emitter array.

7. The emitter array of claim 6 , wherein the column and the second column are orthogonal to the first row and the second row.

8. The emitter array of claim 5 , wherein a center-to-center distance between the first emitter and the third emitter is equal to the center-to-center distance between the first emitter and the second emitter.

9. The emitter array of claim 5 , wherein the first lower electrode extends over the epitaxial side of the substrate between the first and third emitters.

10. The emitter array of claim 1 , wherein the isolation implant extends along sides of the isolation trench separating the first emitter and the second emitter.

11. The emitter array of claim 10 , wherein the isolation implant is configured to electrically isolate the first lower electrode from the upper electrode with respect to the first emitter,

wherein the isolation implant is configured to electrically isolate the second lower electrode from the upper electrode with respect to the second emitter.

12. The emitter array of claim 1 , wherein the center-to-center distance between the first emitter and the second emitter spans the isolation trench.

13. The emitter array of claim 1 , wherein the first lower electrode and the second lower electrode are cathodes, and wherein the upper electrode is an anode.

14. A method comprising:

forming a first metal layer associated with providing a first lower electrode of a first emitter in an epitaxial side of a substrate of an emitter array

forming a second metal layer associated with providing a second lower electrode of a second emitter in the epitaxial side of the substrate;

forming an isolation trench in the epitaxial side of the substrate associated with separating the first emitter and the second emitter;

forming an isolation implant in the substrate through a bottom of the isolation trench, the isolation implant associated with electrically isolating the first lower electrode from the second lower electrode; and

forming a third metal layer associated with providing an upper electrode on the epitaxial side of the substrate,

wherein the upper electrode is shared among the first emitter and the second emitter, and

wherein a center-to-center distance between the first emitter and the second emitter is less than approximately 90 micrometers.

15. The method of claim 14 , further comprising:

forming a fourth metal layer associated with providing a second upper electrode of a third emitter on the epitaxial side of the substrate,

wherein the first lower electrode is shared among the first emitter and the third emitter, and the second upper electrode is isolated from the upper electrode.

16. The method of claim 14 , wherein forming the isolation implant comprises:

forming the isolation implant along sides of the isolation trench separating the first emitter and the second emitter.

17. The method of claim 16 , wherein the isolation implant is associated with electrically isolating the first lower electrode from the upper electrode with respect to the first emitter,

wherein the isolation implant is associated with electrically isolating the second lower electrode from the upper electrode with respect to the second emitter.

18. The method of claim 14 , wherein a width of the isolation trench is less than or equal to approximately 10 micrometers.

19. The method of claim 14 , wherein a width of the isolation trench is less than a depth of the isolation trench.

20. The method of claim 14 , wherein the center-to-center distance between the first emitter and the second emitter spans the isolation trench.